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17: RTS measurement setup that is used in the dynamic characterization module.

17: RTS measurement setup that is used in the dynamic characterization module.

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Figure 2.2: Lithography induced variability and OPC based improvement....
Figure 2.3: (a) Average number of dopants evolution in MOS Transistor...
Figure 2.4: Different types of traps associated with Si-SiO 2 interface...
Figure 2.5: I ON /I OF F evolution with respect to the technology node...
+59 Figure 2.6: The threshold voltage variability (σ V T H ) with the...
Statistical methodologies for modelling the impact of process variability in ultra-deep-submicron SRAMs
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The downscaling of device geometry towards its physical limits exacerbates the impact of the inevitable atomistic phenomena tied to matter granularity. In this context, many different variability sources raise and affect the electrical characteristics of the manufactured devices. The variability-aware design methodology has therefore become a popul...
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