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This paper presents a V-band Low Noise Amplifier (LNA) that uses a cascode configuration. This LNA will be used as a part of a WPAN (Wirless Personal Area Network) receiver in the millimeter-wave band at 60 GHz. This low noise amplifier is designed according to the MMIC technology (Monolithic Microwave Integrated Circuit) in PH15 process from UMS f...
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... allows a level of exploitable signal with a minimum possible error. Fig.1 shows the architecture of the transmitter at 60 GHz. ...
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... shows the third Intercept point (IP3). We can observe in Fig.10 that the 1dB compression point of the proposed LNA is (Pin= -10.74 dBm, Pout=4.58 ...
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... order to improve the peak gain at 60 GHz, we added one more stage to the previous configuration. Fig.11 shows the electrical schematic of the three-stage LNA MMIC circuit. ...
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... inter-stages matching was chosen to operate in the frequency band of 56 GHz to 62 GHz. Fig.11 Electrical schematic of the designed three-stage cascode V-band LNA. ...
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... Electrical schematic of the designed three-stage cascode V-band LNA. Fig.12 shows the Noise figure compared to NFMin. ...
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... shows the Noise figure compared to NFMin. We can observe that the Noise figure did slightly changed compared to the previous design but it stills around 1dB. Fig .13 shows the output gain of the proposed LNA compared to the MaxGain. ...
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... the previous configuration the gain was about 15.6 dB, now it reaches 23.5 dB. Fig.13 Output Gain. ...
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... shows the S-parameters simulation results of the proposed LNA. From Fig.14 we observe that the input return loss (S11) is about -6.61 dB and the output return loss (S22) reaches -11.26 dB. ...
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... Fig.14 we observe that the input return loss (S11) is about -6.61 dB and the output return loss (S22) reaches -11.26 dB. Fig.15 shows that the 1dB compression point of the proposed LNA is (Pin= -4.27 dBm, Pout=7.33 dBm). ...
Similar publications
In this paper, a 60 GHz high efficiency power amplifier (PA) with integrated input and output matching is presented. The designed PA uses a 0.15 µm gate length AsGa PHEMT (Pseudomorphic High Electron Mobility Transistor) process. The power amplifier achieves a peak power gain of 17.8 dB and a maximum single-ended output power of 14.34 dBm with 57.9...
Citations
... The band around 60 GHz is free to use and offers the possibility of data communication within short distance at speeds of several gigabits per second. [1] This band is used for Wireless Personal Area Network (WPAN) which is governed by the standard IEEE 802.15.3c for multi-gigabit multimedia applications. [2]- [3] These applications are possible due to the development in transistors performance. ...
In this paper, a 60 GHz high efficiency power amplifier (PA) with integrated input and output matching is presented. The designed PA uses a 0.15 µm gate length AsGa PHEMT (Pseudomorphic High Electron Mobility Transistor) process. The power amplifier achieves a peak power gain of 17.8 dB and a maximum single-ended output power of 14.34 dBm with 57.95% of power-added efficiency (PAE) at 60 GHz. These results are the best combination of output power and efficiency reported for an MMIC (Monolithic Microwave Integrated Circuit) AsGa device at V-band. The designed power amplifier has a 3-dB bandwidth of 7 GHz.
... This band is used for Wireless Personal Area Network (WPAN) which is governed by the standard IEEE 802. 15.3c for multi-gigabit multimedia applications. [1]- [2] These applications are possible due to the recent development in transistors performance. ...
... The inter-stages matching was chosen to operate in the frequency band of 56 GHz to 62 GHz. [15] Fig .13 shows the output gain of the proposed LNA compared to the MaxGain. ...
Mediterranean Telecommunications Journal
(Revue Méditerranéenne des Télécommunications)
Vol.6, N°1, January 2016
ISSN: 2458-6765
This paper presents a GFET (Graphene Field Effect Transistor) based low noise amplifier (LNA) for E-Band radios. The operating frequency is 60-80GHz. Instead of the commonly used cascade stage, the proposed LNA has a current-reuse topology. A wideband gain is obtained by using stagger tuning technique. The amplifier’s first stage is designed to reduce power dissipation by current-reuse topology and the second stage is designed to provide high gain and better output impedance matching. The presented design shows a high gain over a wide bandwidth, with a peak gain of S21=25 dB, effective input impedance matching (S11<–9 dB) and a Noise Figure<0.6 dB over the whole operating frequency range. The proposed LNA exhibits an improved performance as compared to other CMOS/mHEMT/pHEMT LNAs and consumes 12 mW power at a supply voltage of 3 V.
In this paper, a three-stage cascode LNA and a three-stage common source LNA are presented. A comparison in terms of noise figure and gain between the two designed three-stage MMIC common source and cascode LNAs is discussed. This LNAs will be used as a part of a WPAN (Wirless Personal Area Network) receiver in the millimeter-wave band at 60 GHz.
