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![RAM Cell Circuit [2].](profile/Zafar-Khan/publication/309771961/figure/fig1/AS:426473334022149@1478690574344/RAM-Cell-Circuit-2.png)
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![Figure 1: Prediction of Moore's Law [1].](profile/Zafar-Khan/publication/309771961/figure/fig10/AS:668716249399301@1536445786169/Prediction-of-Moores-Law-1_Q320.jpg)
![Figure 2: RAM Cell Circuit [2].](profile/Zafar-Khan/publication/309771961/figure/fig1/AS:426473334022149@1478690574344/RAM-Cell-Circuit-2_Q320.jpg)
![Figure 4: Change of bias with insulator thickness [4].](profile/Zafar-Khan/publication/309771961/figure/fig3/AS:426473338216465@1478690575813/Change-of-bias-with-insulator-thickness-4_Q320.jpg)
![Figure 5: Different types of tunneling [4].](profile/Zafar-Khan/publication/309771961/figure/fig4/AS:426473342410752@1478690576226/Different-types-of-tunneling-4_Q320.jpg)
Nonvolatile memory is making significant advances off-late. Earlier nonvolatile memory was 'Read Only' type. Present breakthroughs added 'Write' access to this type of memory. Market demands many attractive features on a single product. There is a trade-off for optimized features. An overall optimization between hardware and software is essential.
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