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Procedure for preparation of a single BGA structure joint by twice reflow soldering. 

Procedure for preparation of a single BGA structure joint by twice reflow soldering. 

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Solder joint integrity has long been recognized as a key issue affecting the reliability of integrated circuit packages. In this study, both experimental and finite element simulation methods were used to characterize the mechanical performance and fracture behavior of micro-scale ball grid array (BGA) structure Cu/Sn–3.0Ag–0.5Cu/Cu solder joints w...

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... values of 16 lm and 37 lm, respectively. Sn-3.0Ag-0.5Cu (simplified as SAC305) solder balls with different diameters were used to prepare BGA structure Cu/ Sn-3.0Ag-0.5Cu/Cu (i.e., Cu/SAC305/Cu) solder joint samples by twice reflow soldering process with a typical ramp-soak-spike (RSS) curve offered by a BGA rework machine (RD-300), as shown in Fig. 1. The peak temperature was 250 °C and the dwell time at 250 °C was 30 s. The measured heating rate from 120 to 250 °C was 1.5 °C/s and the cooling rate from 250 °C to 150 °C was $2.3 °C/s [17]. Fig. 2(a) shows an as-reflowed single BGA solder joint. Solder joint samples were prepared with three different standoff heights (h) of 500, 300 ...
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... FE simulation results indicate that the shear strength of solder joints increases with decreasing standoff height, the experimental shear strength data of the micro-scale joints show a parabolic trend with the standoff height (see Fig. 10, where each point is the average value (±1 standard deviation) of twelve sam- ples). Clearly, the average shear strength increases with decreasing h from 500 to 300 lm, but it decreases further when h is reduced from 300 to 100 lm. These results may be explained that with the standoff height decreasing from 300 to 100 lm, the solder ...
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... Crack driving force at the SAC305/IMC interface of BGA joints Fig. 11 shows the fracture mode of a BGA joint with a standoff height of 500 lm aged at 125 °C for 1000 h. Clearly, fracture may happen at the interface of SAC305/IMC after long-time thermal aging. This is mainly because the bonding strength of the SAC305/IMC interface has been decreased after aging for long-time [34]. Thus, the crack ...
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... l 1 and l 2 are shear moduli of the Cu 6 Sn 5 layer and SAC305, respectively, which can be calculated according to Eq. (14), in which (E 1 , E 2 ) and (m 1 , m 2 ) are elastic modulus and Poisson's ratio of Cu 6 Sn 5 and SAC305, respectively, and j i = (3 À 4m i ) (i = 1, 2). The oscillatory index e is given by Eq. (15): Fig. 12. SIFs and total strain energy release rates at the crack tip at the SAC305/IMC interface of BGA joints with different standoff heights: (a) SIFs; and (b) total strain energy release ...
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... property of SAC305 and ensure the validity of the calculated results of SIFs at the SAC305/IMC interface based on interfacial fracture mechanics, a loading shear stress of 11.05 MPa (i.e., F = 2 N, see Fig. 4) was applied with a quasi-static loading rate of 1 N/min to investigate the interfacial mechanical behavior of the BGA solder joints. Fig. 12(a) shows that K I is larger than K II when h > 200 lm, which means failure at the interface occurs by opening (i.e., mode I), while K II is larger than K I when h 6 200 lm, failure is by shearing (mode II). Hence, the fracture mode may change from the opening mode to the shearing mode when h is decreased. Further, both SIFs and G I (see ...
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... Fig. 12(a) shows that K I is larger than K II when h > 200 lm, which means failure at the interface occurs by opening (i.e., mode I), while K II is larger than K I when h 6 200 lm, failure is by shearing (mode II). Hence, the fracture mode may change from the opening mode to the shearing mode when h is decreased. Further, both SIFs and G I (see Fig. 12(b)) at the interface crack increase significantly with increasing standoff height h, and this explains why interface failure is more prone to occur in the BGA joints with large h after long-time thermal aging. Fig. 13 shows the brittle fracture in the IMC layer of BGA joints after isothermal aging at 150 °C for 1200 h. Here, cracks form ...
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... the fracture mode may change from the opening mode to the shearing mode when h is decreased. Further, both SIFs and G I (see Fig. 12(b)) at the interface crack increase significantly with increasing standoff height h, and this explains why interface failure is more prone to occur in the BGA joints with large h after long-time thermal aging. Fig. 13 shows the brittle fracture in the IMC layer of BGA joints after isothermal aging at 150 °C for 1200 h. Here, cracks form at the interface of Cu 6 Sn/Cu 3 Sn according to the chemical composition and element distribution results analyzed by electron probe micro- analysis and shown in Figs. 13(b) and (d).The interface between two IMCs ...
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... BGA joints with large h after long-time thermal aging. Fig. 13 shows the brittle fracture in the IMC layer of BGA joints after isothermal aging at 150 °C for 1200 h. Here, cracks form at the interface of Cu 6 Sn/Cu 3 Sn according to the chemical composition and element distribution results analyzed by electron probe micro- analysis and shown in Figs. 13(b) and (d).The interface between two IMCs with a layered structure often serves as an easy path for brittle crack propagation [41]. Besides, the formation of Cu 3 Sn requires more Cu atoms than Cu 6 Sn 5 , excessive growth of Cu 3 Sn promotes the formation and growth of Kirkendal voids in the Cu 3 Sn layer and at the Cu 3 Sn/Cu interface, which ...
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... an applied stress of 22.10 MPa (i.e., F = 4 N) is used in the simulation to evaluate the geometry effect on the crack driving force in the IMC layer. Fig. 14 shows the distribution of von Mises stress in the BGA solder joint. The highest stress appears at the crack tip of the IMC layer, but this does not mean that failure will occur. Herein, the SIFs and strain energy release rate are used to characterize the crack growth in the middle of the IMC layer. The mode I and II SIFs are given by ...
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... l is shear modulus; Dm and Dx are the relative displacements of the selected nodes of one crack-face relative to the other, and c is the original distance between the nodes selected to calculate the relative displacements and the crack tip, and c = 1.2 lm (see Fig. 3(c)). Since K III in the symmetry model must be zero, it is not considered here. Fig. 15 presents the FE results of SIFs and strain energy release rates at the crack tip in the IMC layer with different standoff heights. Clearly, K I increases sharply and K II gradually with increas- ing h as shown in Fig. 15(a). This can be explained as follows. With increasing h, the stress along the SAC305/IMC interface increases ...
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... and the crack tip, and c = 1.2 lm (see Fig. 3(c)). Since K III in the symmetry model must be zero, it is not considered here. Fig. 15 presents the FE results of SIFs and strain energy release rates at the crack tip in the IMC layer with different standoff heights. Clearly, K I increases sharply and K II gradually with increas- ing h as shown in Fig. 15(a). This can be explained as follows. With increasing h, the stress along the SAC305/IMC interface increases significantly due to stress concentration as indicated by the result and analysis in Section 3.2.2. During shear loading, the von Mises stress distributes more uniformly in the solder matrix of the BGA joint with h = 100 lm, being ...
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... increases significantly due to stress concentration as indicated by the result and analysis in Section 3.2.2. During shear loading, the von Mises stress distributes more uniformly in the solder matrix of the BGA joint with h = 100 lm, being more prone to concentrate along the SAC305/Cu 6 Sn 5 interface with increasing standoff height (see Fig. 9(a1)-(c1)). This means that the stress level around the crack, which is in the IMC layer and very close to the stress concentration zone, increases with increasing h. Thus, the SIFs at the crack tip also increase with ...
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... it is also clear that K I is obviously larger than K II under shear loading, as shown in Fig. 15(a). Thus, the opening mode (i.e., mode I) fracture occurs in the IMC layer. In mode I fracture, the strain energy release rate, G I , is given ...
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... v and E are Poisson ratio and elastic modulus of the Cu 6 Sn 5 layer, respectively, as given in Table 2. Under a shear force of 4 N, G I increases dramatically from 12.9 to 64.4 J/m 2 with increasing h from 100 to 500 lm, see Fig. 15(b). Therefore, increasing standoff height leads to increasing crack driving force and raises the risk of brittle fracture in the IMC layer. ...

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