Figure 2 - uploaded by Chang-Wook Han
Content may be subject to copyright.
Polyimide is the polymer made from the polymerization of an acid dianhydride (6FDA) monomer and a diamine (ODA) monomer for gate dielectric.
Source publication
A top gate pentacene TFT employing vapor deposited polyimide as a gate dielectric was fabricated. Polyimide was co-evaporated from 6FDA and ODA monomers and annealed at 150 °C in vacuum. The degree of imidization was verified by FT-IR. A breakdown voltage of 0.9 MV/cm of polyimide film was measured by MIM structure. A top gate pentacene TFT with W/...
Similar publications
This work outperforms the previous literatures by proposing a delay-cell-controlled voltage control oscillator (VCO) design for common unipolar, single-gate, and enhancement-mode thin-film transistor (TFT) technologies. A design example with InZnO TFTs is simulated to verify the proposed design. The design example has a 500 μW power consumption, 0....
An excess oxygen-peroxide-based model that can simultaneously analyze the positive-bias-stress (PBS) and negative-bias-illumination-stress (NBIS) instabilities in commercial self-aligned top-gate (SA-TG) coplanar indium–gallium–zinc oxide (IGZO) thin-film transistors (TFTs) is proposed herein. Existing studies have reported that the transition of o...
In this paper, high-performance poly-Si TFT with ZrTiO4 as gate dielectric material under optimized MILC silicide material has been analyzed. The EOT of the dielectric use is 4.1 nm. The electrical performance of this setup attained a low value for threshold voltage of -2 V and a steep SS of 1.70E+00 V/dec. These properties thus obtained pose to be...
