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Performance of the flexible tactile sensor. a) Schematic illustration of sensor structure. b) Photograph of pressure‐sensitive elastic layer made of carbon nanotube and room‐temperature‐vulcanizing latex. Inset: optical images showing arrangement and cross‐section of micropyramid arrays on the surface of this layer. c) Photograph of flexible tactile sensor with 3 × 3 sensing elements. d) Relationship between applied pressure and sensor conductance. Applied pressure of 250 kPa corresponds to applied force of 25 N. Inset: photograph of interdigitated electrodes of the sensor. e) Time‐dependent response of the sensor under slowly‐applied force and f) under rapidly applied force. g) Sensitivity of the sensor under repeated bending over 1600 cycles. Inset: photograph of the sensor under bending. h) Schematic circuit diagram of the connection between sensor and spike‐encoding circuit. i) Relation between applied force and output spike frequency, showing the spike‐rate coding strategy. j) Sensor signal and k) output spike recorded under different applied force. The scale bar in (b) and (c) are 100 µm and 5 mm.

Performance of the flexible tactile sensor. a) Schematic illustration of sensor structure. b) Photograph of pressure‐sensitive elastic layer made of carbon nanotube and room‐temperature‐vulcanizing latex. Inset: optical images showing arrangement and cross‐section of micropyramid arrays on the surface of this layer. c) Photograph of flexible tactile sensor with 3 × 3 sensing elements. d) Relationship between applied pressure and sensor conductance. Applied pressure of 250 kPa corresponds to applied force of 25 N. Inset: photograph of interdigitated electrodes of the sensor. e) Time‐dependent response of the sensor under slowly‐applied force and f) under rapidly applied force. g) Sensitivity of the sensor under repeated bending over 1600 cycles. Inset: photograph of the sensor under bending. h) Schematic circuit diagram of the connection between sensor and spike‐encoding circuit. i) Relation between applied force and output spike frequency, showing the spike‐rate coding strategy. j) Sensor signal and k) output spike recorded under different applied force. The scale bar in (b) and (c) are 100 µm and 5 mm.

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Tactile perception enabled by somatosensory system in human is essential for dexterous tool usage, communication, and interaction. Imparting tactile recognition functions to advanced robots and interactive systems can potentially improve their cognition and intelligence. Here, a flexible artificial sensory nerve that mimics the tactile sensing, neu...

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... When a synapse is stimulated by the activity of the anterior or posterior neuron, its synaptic weight changes, and the information is transmitted from one neuron to another through the aforementioned functional connections. In parallel, it updates the synaptic weight, which facilitates transportation 25,26 Fig. 1b shows the Ag/PI:GQDs/ITO memristor structure of this work. Figure 1c shows the device's 30 nm memristive layer FESEM cross-sectional image. ...
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... When a synapse is stimulated by the activity of the anterior or posterior neuron, its synaptic weight changes, and the information is transmitted from one neuron to another through the aforementioned functional connections. In this way, information transmittance, and in parallel, updating the synaptic weight which facilitates the transport [25][26] . The memristor structure prepared in this work belongs to a simple sandwich structure, as shown in Figure 1b. ...
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Artificial electronic synapses are commonly used to simulate biological synapses to realize various learning functions, which is regarded as one of the key technologies in the next generation of neurological computation. In this work, a simple solution spin coating technique prepared memristors based on the simple structure of polyimide (PI):graphene quantum dots(GQDs). The devices exhibit remarkably stable exponentially decaying postsynaptic suppression current over time, as interpreted in the spike-timing-dependent plasticity phenomenon. Furthermore, with the increase of the applied electrical signal over time, the conductance of the electrical synapse gradually changes, and the electronic synapse also shows plasticity dependence on the amplitude and frequency of the pulse applied. In particular, the devices with the structure of Ag/PI:GQDs/ITO prepared in this study can produce a stable response to the stimulation of electrical signals between millivolt to volt, not only showing high sensitivity but also a wide range of “feelings”, which makes the electronic synapses take a step forwards to emulate biological synapses. Meanwhile, the electronic conduction mechanisms of the device are also studied and expounded in detail. The findings in this work lay a foundation for developing brain-like neuromorphic modeling in artificial intelligence.
... As a proof of concept, recognition of tactile patterns by tapping Morse code, which were generated by manually controlling the tapping movement of a finger, was implemented. The classification of 26 letters on a 10 × 10 mapping with an accuracy of 94% was realized [140]. Figure 11. ...
... (b) The structure of ion-gelgated synaptic transistor composed of interdigitated electrodes, a self-assembled NP channel, and chitosan-based electrolyte on a polyimide flexible substrate. Recognition of tactile patterns took place by tapping Morse code and the classification of 26 letters on a 10 × 10 mapping [140] Reprinted/adapted with permission from Ref. [140] Jiang, 2022. Figure 12a presents the synaptic transistor with 1D ZnO wire as the channel material [141]. Due to the optoelectronic properties, the device is able to sense the optical stimuli with low intensity at the order of microwatts per square centimeter and process the signals as an electronic signal. ...
... (b) The structure of ion-gelgated synaptic transistor composed of interdigitated electrodes, a self-assembled NP channel, and chitosan-based electrolyte on a polyimide flexible substrate. Recognition of tactile patterns took place by tapping Morse code and the classification of 26 letters on a 10 × 10 mapping [140] Reprinted/adapted with permission from Ref. [140] Jiang, 2022. Figure 12a presents the synaptic transistor with 1D ZnO wire as the channel material [141]. Due to the optoelectronic properties, the device is able to sense the optical stimuli with low intensity at the order of microwatts per square centimeter and process the signals as an electronic signal. ...
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