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Percentage drift of junctionless ISFET for different (a) pH buffer, and (b) Liquid-gate voltages

Percentage drift of junctionless ISFET for different (a) pH buffer, and (b) Liquid-gate voltages

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Figure 1: (a) Sheet resistance measurements through four-point-probe...
Figure 2: (a) Setup for characterization (b)Transfer characteristics...
Figure 3: (a) Threshold voltage shift before and after transient...
Figure 5: Transient characteristics of p-type JL-ISFET for (a) V lg =...
+4 Figure 6: Transient characteristics of JL-ISFET for different (a) pH,...
Electrical Characterization And Study of Current Drift Phenomena And Hysteresis Mechanism In Junctionless Ion-Sensitive Field-Effect Transistor.
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  • Jun 2021
A comprehensive study of the drain current drift mechanism and hysteresis phenomena in fabricated p-channel junctionless ion-sensitive field-effect transistor (JL-ISFET) has been investigated for the first time. The drift measurements have been performed through transient analysis of drain current, under different pH and liquid-gate bias ( V lg )....
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