Figure 5 - uploaded by Maxime Barriere
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Overview of the top-surface of the IGBT with silver-filled epoxy resin layer on the gate and emitter electrodes using profilometer
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An innovative process to realize 3D packages with controlled Si-power semiconductor devices has been developed. We purpose, for the first time and based on a low-cost process, to make compatible the silver sintering process with aluminum top-metallization dice. The use of a silver epoxy resin allows to process the top metallization of silicon dice....
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An innovative process to realize 3D packages with controlled Si-power semiconductor devices has been developed. We purpose, for the first time and based on a low-cost process, to make compatible the silver sintering process with aluminum top-metallization dice. The use of a silver epoxy resin allows to process the top metallization of silicon dice....