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A 50-W low distortion GaAs MESFET for L-band has been successfully
developed by optimizing chip design and adopting nearly class-B
push-pull operation. The newly developed FET achieved a P<sub>1 dB</sub>
of 47.1 dBm (51.3 W) with a linear gain (GL) of 13.1 dB and the maximum
drain efficiency of 57% (f=1.5 GHz, V<sub>DS</sub>=10 V,
I<sub>DS</sub>=3%...
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Citations
... GaAs FETs, high electron mobility transistors (HEMTs), and heterojunction bipolar transistors (HBTs) are widely used as microwave and radio frequency (RF) power devices [3]– [5]. Among these devices, GaAs power FETs are often used in digital communication systems because of their relatively high output power and gain characteristics [6]. Therefore, their nonlinear effects and reduction of spurious power in and out the band are of great importance in digital communication [7]–[9]. ...
Linearity of the GaAs field effect transistor (FET) power
amplifier is greatly influenced by source and load impedances for the
FETs. The third order intermodulation products (IMD<sub>3</sub>) of the
GaAs FET are investigated in relation to source and load impedances.
From heuristic as well as analytic point of view, the Volterra-series
technique is employed to show that the least IMD<sub>3</sub> are found
at the minimum source resistance (R<sub>S</sub>) and maximum load
resistance (R<sub>L</sub>). The simulated results are compared with the
load and source pull data with good agreements. The simulation also
shows that source impedance has a greater effect on the IMD<sub>3</sub>
than the load impedance
The linearity of the GaAs Field Effect Transistor (FET) power amplifier is greatly influenced by the nonlinear characteristics of gate-source capacitance (C-gs) and drain-source current (I-ds) for the FETs. However. previously suggested analysis methods of GaAs FET non-linearity are mainly focused on the investigations by each individual non-linear component (C-gs) or (I-ds) without considering both non-linear effects. We analyze more accurately the non-linearity of GaAs FETs by considering non-linear effects of C-gs and I-ds simultaneously. We also investigate the third-order intermodulation distortion (IMD3) of the GaAs FET in relation to source and load impedances that minimize FET non-linearities. From the simulation results by Volterra-series technique, we show that the least IMD3 is found at the minimum source resistance (R-S) and maximum load resistance (R-L) in the equivalent output power (P-out) contour. Simulated results are compared with the load and source pull data, with good agreement.
In this paper, a Quasi-Balanced mode GaAs FET amplifier is proposed, where a varactor diode is connected in parallel with the gate source of a GaAs FET, forcing it to operate in a quasi-balanced mode in order to compensate its input nonlinear gate-source capacitance. A 30-dB reduction for the first side-lobe was obtained at 1-dB g.c.p. by using optimal 2nd-harmonic terminations and a varactor diode. © 2005 Wiley Periodicals, Inc. Microwave Opt Technol Lett 46: 573–577, 2005; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.21055
This paper reports an L-band power AlGaAs/GaAs heterostructure FET
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performance and reduced size of digital cellular base station systems
