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We report the performance of field-effect transistors (FETs), comprised of mono-layer of recently synthesized layered two-dimensional MoSi$_2$N$_4$ as channel material, using the first principles quantum transport simulations. The devices' performance is assessed as per the International Roadmap for Devices and Systems (IRDS) 2020 roadmap for the y...
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... to SDT than SG as DG shows better gate controllability than SG. Hence, DG devices are more scalable than SG. The best scalable device is DG p-FET, and it can be scaled down to 5 nm. At L Ch = 5 nm, DG p-FET show SS ∼ 65 and I ON /I OF F > 3 × 10 6 for LP applications; For HP applications, it shows SS ∼ 67 mV/decade and I ON /I OF F > 10 4 . Figure. 6 shows the output characteristics of DG n-FET and p-FET with L Ch = 5 nm. Figure. figure). But, the stability of BP remains the primary concern [14]. For n-type devices: (1) For L Ch > 5 nm, ML-As, and MLBi 2 O 2 Se have high I ON than ML-MoSi 2 N 4 . However, the preparation of As can produce toxic arsenic trioxide, making its ...
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