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Optical Image of the packaged InP MZM chip. Inset shows the measured eye diagram at 10 Gbit/s after packaging.
Source publication
The 2-μm wavelength range has emerged as a low-loss and low-latency optical transmission window when using hollow-core photonic band gap fiber (HC-PBGF) and high-gain thulium-doped fiber amplifiers (TDFA). Various single and multichannel transmission experiments at these wavelengths have been implemented using directly modulated lasers and LiNbO3-b...
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... device utilizes the quantum-confined Stark effect (QCSE) to achieve the change in refractive index around 2µm, which in turn leads to the phase change between the two interferometric arms of the modulator with the applied electrical field. The modulator chip is cleaved and then wire bonded to a low-cost PCB RF interposer and 50 chip resistor as shown in Fig.1. The DC and RF input is delivered to the modulator through a high-speed mini-SMP connector which is soldered on to the PCB board. ...
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Citations
... It is reported recently that HDFAs operating beyond 2 µm have attracted rapid research interests due to potential applications in various emerging technologies such as light detection and ranging, high capacity DWDM networks, coherent lightwave systems, and sensing applications [5][6][7][8][9]. HDFAs have multiple advantages compared to other DFAs such as high power conversion efficiency (PCE), high gain, high output power, and mid-IR amplification [5]. ...
In this paper, we address the performance optimization of Holmium doped fiber amplifier (HDFA) for optical communications in 2–2.15 μm wavelength range based on a single in-band forward pump source. The performance of the HDFA is analyzed with the help of theoretical simulations by considering an optimized length of Holmium doped fiber (HDF), doping concentration of Ho3+, and pump power. The impact of signal wavelength and power on gain, amplified spontaneous emission (ASE) noise, and noise figure (NF) of the amplifier is investigated. Furthermore, we investigate the variations in the gain of the amplifier, its output power, and NF by varying the power and wavelength of the pump source. After optimizing the parameters of the amplifier, the peak gain observed is around 56.5 dB, the 3 dB saturated output power obtained is 33.3 dBm, and the output power is 3 W at signal wavelength of 2.0321 μm for HDF having an optimized length of 12 m and pump power of 3.5 W. Minimum NF of around 8.2 dB is observed at 2.0321 μm for signal power of −5 dBm. The impact of ion-ion interaction on the performance of HDFA is also investigated. A reduction of 24.2 dB and 0.051 W is observed in peak gain and output power of HDFA, respectively by considering the ion-ion interaction.
... µm), low-noise, and high gain makes the 2-µm-waveband favorable as the new telecommunication window for wavelength-divisionmultiplexing systems. Besides, hollow-core photonic bandgap fibers (HC-PBGF) [2,3] could potentially achieve a loss as low as 0.2 dB/km at 2-µm wavelength band and allow high-capacity and low-latency data transmission because of their intriguing optical properties, including high damage threshold and significantly reduced nonlinearity and dispersion. All these facts make it worthwhile to explore the 2-µm-waveband as a potential window for future telecommunications and data communications. ...
The 2-μm-waveband has been recognized as a potential telecommunication window for next-generation low-loss, low-latency optical communication. Thermo-optic (TO) modulators and switches, which are essential building blocks in a large-scale integrated photonic circuit, and their performances directly affect the energy consumption and reconfiguration time of an on-chip photonic system. Previous TO modulation based on metallic heaters at 2-μm-waveband suffer from slow response time and high power consumption. In this paper, high-performance thermo-optical Mach–Zehnder interferometer and ring resonator modulators operating at 2-μm-waveband were demonstrated. By embedding a doped silicon (p++-p-p++) junction into the waveguide, our devices reached a record modulation efficiency of 0.17 nm/mW for Mach–Zehnder interferometer based modulator and its rise/fall time was 3.49 μs/3.46 μs which has been the fastest response time reported in a 2-μm-waveband TO devices so far. And a lowest Pπ power of 3.33 mW among reported 2-μm TO devices was achieved for a ring resonator-based modulator.
... Through improving the ER of the modulator, problems such as bit error rate can be effectively prevented. At the same time, compared with the group-IV-material-based modulators, although the silicon modulator has the characteristics of CMOS process compatibility and low cost, its modulation performance is still far from adequate [23]. ...
The effect of the free carrier effect is more significant in the mid-infrared band when compared with the 1310 band and 1550 band. In this paper, we propose a cascaded Mach-Zehnder interference (MZI) structure to improve the extinction ratio (ER) of the modulator in the mid-infrared band. The cascaded compensation method is to add the next-stage equal-arm MZI device to the two phase shifters of the major MZI. The output light intensity of the two phase shifters can be maintained at the same level by adjusting the output loss of both the equal-arm MZI. With the cascaded compensation method, the simulated ER of the optical modulator is increased from 36 dB to 55 dB under −4 Vbias while the device still maintains a low insertion loss (IL) of 12.5 dB. Through the cascaded compensation method, the modulation depth of the modulator at −2 V, −4 V, −6 V, and −8 V are 58 dB, 53 dB, 57 dB, and 59 dB, respectively. Meanwhile, the dynamic ER is 9.2 dB at a data rate of 40 Gbps, which is 4.5 dB higher than that of the original one.
... Furthermore, thulium-doped fiber amplifiers (TDFAs) provide an exceptionally wide (100 nm) bandwidth in this wavelength range, and thus long-distance communication in the 2 μm transmission window is considered to be feasible [5]. From then on, several high-speed and high-capacity optical communication systems have been demonstrated experimentally by using the proposed HC-PBGF or other fibers [6][7][8]. 100 Gbit/s wavelength-division multiplexing (WDM) transmission in the 2 μm waveband was successfully demonstrated over 1.15 km of low-loss HC-PBGF and over 1 km of solid core fiber (SCF) [6]. After that, an externally modulated 4 × 10 Gbit∕s non-return-to-zero (NRZ) on-off keying (OOK) WDM signal transmitted through 1.15 km of lowloss HC-PBGF, employing an InP-based Mach-Zehnder modulator (MZM) for the first time [7], to the best of our knowledge. ...
... 100 Gbit/s wavelength-division multiplexing (WDM) transmission in the 2 μm waveband was successfully demonstrated over 1.15 km of low-loss HC-PBGF and over 1 km of solid core fiber (SCF) [6]. After that, an externally modulated 4 × 10 Gbit∕s non-return-to-zero (NRZ) on-off keying (OOK) WDM signal transmitted through 1.15 km of lowloss HC-PBGF, employing an InP-based Mach-Zehnder modulator (MZM) for the first time [7], to the best of our knowledge. Recently, 80 Gbit/s data transmission using the direct-detection optical filter bank multicarrier (FBMC) modulation technique is achieved, which is the highest single-channel bit rate through a 100-m-long SCF designed for single-mode transmission at 2 μm [8]. ...
Based on a silicon platform, we design and fabricate a four-mode division (de)multiplexer for chip-scale optical data transmission in the 2 μm waveband for the first time, to the best of our knowledge. The (de)multiplexer is composed of three tapered directional couplers for both mode multiplexing and demultiplexing processes. In the experiment, the average crosstalk for four channels is measured to be less than −18 dB over a wide wavelength range (70 nm) from 1950 to 2020 nm, and the insertion losses are also assessed. Moreover, we further demonstrate stable 5 Gbit/s direct modulation data transmission through the fabricated silicon photonic devices with non-return-to-zero on–off keying signals. The experimental results show clear eye diagrams, and the penalties at a bit error rate of 3.8×10−3 are all less than 2.5 dB after on-chip data transmission. The obtained results indicate that the presented silicon four-mode division multiplexer in the mid-infrared wavelength band might be a promising candidate facilitating chip-scale high-speed optical interconnects.
Efficient fiber‐chip couplers operating at distinct wavelength bands are key components to combine or split different optical bands for emerging data transmission and nonlinear applications. Herein, a dual‐band silicon‐integrated grating coupler (GC) operated at 1.55 and 2 μm wavebands is designed and demonstrated. The proposed device can simultaneously couple 1.55 and 2 μm wavebands light into the in‐plane waveguides at the same incident angle. Numerical simulations indicate that coupling efficiencies (CEs) are −2.5 and −3.9 dB for center wavelengths at 1561 and 1979 nm, respectively. The dual‐band GC is experimentally demonstrated on a commercially available 340 nm silicon‐on‐insulator wafer. The fabricated dual‐band GC with center wavelengths of 1559 and 1968 nm obtains CEs of −4.9 and −6.4 dB, with 3 dB bandwidths of 81 and 80.4 nm, respectively. Also, the first proof‐of‐concept demonstration of 10 Gb s−1 wavelength division multiplexing transmission at 1.55 and 2 μm waveband is presented based on the fabricated dual‐band GC.
We present the detailed numerical analysis and characterization of SiGe/Si heterojunction electro-optic modulator at 2 μm, 4.3 μm, and 5 μm wavelengths. We investigate the band, the refractive index, and the carrier injection efficiency of SiGe/Si heterojunction PIN electrical structure. Numerical investigations are carried out on the key geometrical parameters, doping concentration, Ge content. The results show that the modulated voltage of SiGe/Si PIN heterojunction modulator is lower 50% than that of Si modulator under the same modulation effect. In order to eliminate the absorption losses of SiO 2 in mid-infrared, the punch Mach–Zehnder optical structure is established and researched. The research present that the modulator has the short 500 µm phase shifters and the low V π L π of 0.042 Vcm under forward bias voltage, and the extinction ratio is greater than 12.81 dB. The high-speed transmission characteristics are shown to have clean eye diagrams up to 40 Gbps in mid-infrared.
With the emerging trend of big data and internet of things, silicon (Si) photonics technology has been developed and applied for high‐bandwidth data transmission. Contributed by the advantages of Si including high refractive index, low loss, significant thermal‐optical effect, and CMOS compatibility, various functional photonic devices have been demonstrated. One exception is the laser source, which is limited by the indirect bandgap of Si. Researchers have come up with different ways to make lasers on Si. This review presents the development progress of integrated laser sources on Si, with the focus on the wavelength regimes for communication. These lasers are categorized based on their gain media, including III–V semiconductor‐based laser, germanium/germanium tin‐based laser, Raman‐based laser, and rare‐earth‐doped laser. The laser performance and characteristics are summarized in tables for comparison. The key results are discussed. Future perspectives on the development of integrated lasers on Si have also been provided.
