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![Observation of quantum oscillation in the BaO films. (a) Rxy as a function of magnetic fields at various temperatures. (b) Shubnikov-de Haas (SdH) oscillations at various temperatures. (c) Fast Fourier transformed (FFT) of the ΔRxy-B -1 curves in (b), which exhibit two typical oscillatory components with the frequencies Fα = 51 T and Fβ = 78 T. Temperature dependences of Fα and Fβ are shown in the inset of (c). Dash lines are the fitting curves, exhibiting an exponential decay with increasing temperature. (d) Field dependent magnetoresistance [(RH-R0)/R0], where RH and R0 represent the Rxx taken at the magnetic fields of μ0H and zero-field, respectively.](publication/359079666/figure/fig2/AS:1131193894486019@1646709049598/Observation-of-quantum-oscillation-in-the-BaO-films-a-Rxy-as-a-function-of-magnetic.png)
Observation of quantum oscillation in the BaO films. (a) Rxy as a function of magnetic fields at various temperatures. (b) Shubnikov-de Haas (SdH) oscillations at various temperatures. (c) Fast Fourier transformed (FFT) of the ΔRxy-B -1 curves in (b), which exhibit two typical oscillatory components with the frequencies Fα = 51 T and Fβ = 78 T. Temperature dependences of Fα and Fβ are shown in the inset of (c). Dash lines are the fitting curves, exhibiting an exponential decay with increasing temperature. (d) Field dependent magnetoresistance [(RH-R0)/R0], where RH and R0 represent the Rxx taken at the magnetic fields of μ0H and zero-field, respectively.
Source publication
Two-dimensional electron gas (2DEG) formed at the interface between two insulating oxides offers an opportunity for fundamental research and device applications. Binary alkaline earth metal oxides possess compatible lattice constants with both silicon and perovskite oxides, exhibiting an enormous potential to bridging those two materials classes fo...
Contexts in source publication
Context 1
... RRR values and high carrier mobility have enabled observations of quantum oscillations via the electrical resistivity measurements. Firstly, we measured the Hall resistance (Rxy) (Fig. 3a) and magnetoresistance [(RH-R0)/R0] (Fig. 3d) gradually to zero with increasing temperature to 3 K. The nonlinear background of Hall resistance can be explained with a two-carrier model by introducing an additional electron. We calculate the effective mass of two types of electrons using the Lifshitz- In addition, we rotated the ...
Context 2
... RRR values and high carrier mobility have enabled observations of quantum oscillations via the electrical resistivity measurements. Firstly, we measured the Hall resistance (Rxy) (Fig. 3a) and magnetoresistance [(RH-R0)/R0] (Fig. 3d) gradually to zero with increasing temperature to 3 K. The nonlinear background of Hall resistance can be explained with a two-carrier model by introducing an additional electron. We calculate the effective mass of two types of electrons using the Lifshitz- In addition, we rotated the direction of the applied magnetic fields with ...
Context 3
... the Fermi surface of BaO film is quasi-two-dimensional type. When the B is parallel to the ab-plane, the oscillations of (RH-R0)/R0 disappears, indicating the anisotropic Fermi surface of BaO film. In addition, the (RH-R0)/R0 of BaO film exhibits the parabolic-like behavior at the lower fields and the linear dependence of at the higher field, see Fig. 3d and Fig. 4a like the observations in Sr2CrMoO6 20,24 ...
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... first-principles calculations were conducted to get a better understanding of the 2DEG on the interface between STO and BaO. We carefully optimize the interface structure by minimizing the formation energy ( Supplementary Fig. S3) and compare the local density of states (LDOS) for each layer (Supplementary Fig. S4). As increasing the layer thickness, the lineshape of the LDOS does not change until the thickness of BaO and STO layers beyond 3 and 5 u.c., respectively. ...
