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The components of OLED encapsulation with hermetic sealing and a 1026-day lifetime were measured by PXI-1033. The optimal characteristics were obtained when the thickness of the TPBi layer was 20 nm. This OLED obtained a maximum luminance (Lmax) of 25,849 cd/m2 at a current density of 1242 mA/cm2, an external quantum efficiency (EQE) of 2.28%, a cu...
Context in source publication
Context 1
... L is the OLED luminance, L 0 is the initial OLED luminance, t is the current time, τ is the characteristic time of decay, and β is a stretching exponent [7,8]. As shown in Figure 6, an OLED device burned-in with thermosetting glue obtained a decay of 0.99813 at 8 h, 0.97479 at 16 h, and 0.95358 at 24 h. An OLED device burned-in with UV glue obtained a decay of 0.99893 at 8 h, 0.98482 at 16 h, and 0.97130 at 24 h. ...
Citations
... resistance, strong mechanical strength, and extremely high insulation of the sealing glass, the laser-assisted glass frit packaging has been widely studied and applied in the OLED encapsulation field recently. [7][8][9][10] The laser absorption capacity and energy conversion of the 800∼810 nm Laser for the sealing glass plays a gigantic role in the local non-contact thermal bonding process and long-time hermetic encapsulation for OLED devices. ...
The efficient 810 nm laser energy conversion of glass frit had been proven to be the key to the long‐term hermetic encapsulation of Organic Light Emitting Display (OLED). A direct laser energy conversion laser‐assisted Bi2O3‐B2O3‐ZnO‐Nd2O3 sealing glass material without extra laser absorbent such as carbon black, was designed and systematically investigated. The addition of Nd2O3, as glass modifiers with higher cationic field strength, could be conducive to enhancing the polymerization of glass network structure, manifesting that the glass‐transition temperature Tg, onset‐crystallization temperature Tc and thermal stability ΔT (ΔT = Tc‐Tg) increased, while thermal expansion coefficient CTE dropped to 9.72×10⁻⁶/°C and advantageously matched with the glass substrate (8±1×10⁻⁶/°C). More importantly, the absorption rate of BBZ‐Nd glass was more than 50 % between 800∼810 nm owing to the 4f‐4f electron transition of Nd³⁺ ions, and yet the reflectivity and transmittance of the wavelength at 800–810 nm were lower. As optimal compositions, the addition of 3.0 wt% Nd2O3 in Bi2O3‐B2O3‐ZnO‐Nd2O3 glass frit with higher absorption coefficients (80 %) led to instantaneous bonding encapsulation between glass substrates without interfacial cracks or pores with the 808 nm wavelength of the laser at 20 W and 2.4 mm/s.
