Figure - available from: Applied Physics A
This content is subject to copyright. Terms and conditions apply.
Source publication
Simulated and experimental properties of a Ga1−xInxAs1−yNynipi solar cell involving V-grooves for contact formation are reported. In particular, using a drift–diffusion model, we simulate the conversion efficiency, the short-circuit current density (JSC), and the open-circuit voltage (VOC) as a function of the number of nipi junctions. Based on the...
Similar publications
The realization of GaAs nanowire high performance quantum devices operated at room temperatures requires that their diameters have to be less than 10 nm. It is shown, that the GaAs nanowires with sub 10 nanometers diameters can be fabricated using the thermal decomposition technique. Depending on annealing conditions, the nanowire lengths, as well...
Highly uniform (111)-faceted Si sawtooth with underlying hollow structures is formed by homo-epitaxy on a U-shape patterned Si (001) substrate. With in-situ III-V growth on such substrates by the III-V/IV dual chamber molecular beam epitaxy, a high-quality GaAs layer is obtained with threading dislocation density approximately ~ 10 6 cm-2 via elect...
The paper presents the numerical analysis of the performance of the nBn type-II superlattice barrier detector operated at 230 K. Results of theoretical predictions were compared to the experimental data for the nBn detector composed of AlAs0.15Sb0.85 barrier and InAs (5.096 nm)/InAs0.62Sb0.38 (1.94 nm) superlattice absorber and contact layer. Detec...
Citations
... To increase efficiency, it is necessary to study on different metal or metal alloys that can form suitable metal semiconductor junctions (Schottky junction with p-and n-type) with GaInNAs. We have a recent report on a GaInNAs-based nipi structure with a short circuit current density 41.4 A/m 2 , an open circuit voltage 0.19 V and an efficiency 0.2% (Muhammetgulyyev et al. 2019). Here, in this paper, we present improved fabrication steps of the previous GaInNAs-based nipi solar cell. ...
... The photovoltaic parameters extracted from the simulation and the experimental J-V characteristics and comparison with the experimental parameters found in our previous study (Muhammetgulyyev et al. 2019) are given in Table 1. An enhancement of both experimental open circuit voltage and fill factor leads to an increase from 0.2 to 1.69%. ...
An anisotropic etching of 1 eV Ga0.92In0.08N0.03As0.97 grown on (100) p-type GaAs substrate was investigated. Effects of the V-groove etching profile and metallization on the photovoltaic performance of the GaInNAs nipi solar cell with five periods are presented. Experimental results were supported by simulation studies considering the metal–semiconductor junction characteristics in the electrodes of nipi photovoltaic device. Standard wet etching processes at room temperature is applied using sulfuric acid based H2SO4: H2O2: H2O [1:8:8] solution to form the V-groove shape on the nipi sample. The etching characteristics in the [100] and \(\left\langle {011} \right\rangle\) crystal directions are determined by using an interdigitated square spiral photolithographic mask. The scanning electron microscope (SEM) is used to analyze the V-groove etch profile. Two type of V-grooves achieved, one of them is in the \(\left[ {1\bar{1}1} \right]\) direction and suitable to form metal electrodes for nipi layers and the second one is in \(\left[ {\bar{1}11} \right]\) direction can be called a dovetail groove and not suitable for metal coating. Experimentally, the improvements observed in the short circuit current, open circuit voltage, and efficiency of the device despite some metallization failures. The effect of the metallization quality on the response to the spectrum can be clearly seen from the photovoltage spectrum. Essentially, these experimental results show that GaInNAs nipi devices have the potential to become high efficiency solar cells. Moreover, it can be possible to achieve high performance by integrating nipi devices into multijunction solar cells.
... Hence, the alternative energy sources such as renewable energy sources that do not contain fossil fuels has been very popular. Solar energy can be considered as the best candidate among the renewable energy sources [3][4][5]. ...
In this study, the very effective design that is Distributed Bragg Reflectors (DBRs) technique and Back Surface Field (BSF) layer are used to fabricate the high-efficiency CdTe-based solar cells. The CdTe-based thin-film solar cells are fabricated as SiO2/Si(DBR)/ZnTe (BSF)/CdTe/CdS/ZnO/FTO. Then, the effects of different number of DBRs layers on CdTe-based solar cell are investigated. 68.77% reflection intensity can be obtained even in 1 period and reflection intensity can reach 99.28% in 3 periods. Significant improvement in cell output parameters are observed with increasing DBRs up to 3 periods. The highest JSC, FF and η values are obtained as 109.82 A/m2, 82.03% and 10.39%, respectively. With the rise in the DBR period, the long wavelength tail of the reflection spectrum is drawn into the center of the reflection band and the long wavelength reflectivity is reduced. This narrowing reduces the rate of reflection of low-energy photons that cannot be absorbed by CdTe layer.
... Each wafer run may present different statistics due to material deposition doping and processing, see Figure 6B. Nonetheless, the wafer uniformity wavelength map is in general scarcely reported by the foundries, some works suggest these claims [79,80]. Tight control of the doping process may reduce this variation and greatly improve the yield and temperature control mechanisms. ...
: The development of photonic integrated circuits (PIC) for access network applications, such as passive optical networks (PON), constitutes a very attractive ecosystem due to PON’s potential mass market. The implementation of PIC solutions in this context is expected to facilitate the possibility of increasing the complexity and functionalities of devices at a potentially lower cost. We present a review addressing the prominent access network market requirements and the main restrictions stemming from its specific field of application. Higher focus is given to PON devices for the optical network unit (ONU) and the implications of designing a device ready for market by discussing its various perspectives in terms of technology and cost. The discussed PIC solutions/approaches in this paper are mainly based on indium phosphide (InP) technology, due to its monolithic integration capabilities. A comprehensive set of guidelines considering the current technology limitations, benefits, and processes are presented. Additionally, key current approaches and efforts are analyzed for PON next generations, such as next-generation PON 2 (NGPON2) and high-speed PON (HSP).
In this study, the modeling and experimental analysis of photovoltaic parameters of the GaInP/GaAs dual–junction (DJ) p–i–n solar cell structure were examined. The design of the GaInP/GaAs DJ p–i–n solar cell structure was done with the drift–diffusion model (DDM), and this structure was grown with the molecular beam epitaxy (MBE) system. The fundamental parameters (open–circuit voltage (VOC), short–circuit current density (JSC), fill factor (FF), and energy conversion efficiency (η)) of these structures were determined by both modeling and the current–voltage experimental measurements. All electrical output parameters of the GaInP/GaAs DJ p–i–n solar cells obtained from modeling and experimental were compared. An increase in solar cell efficiency was observed with the integration of the i–layer.
We report on the power loss mechanisms of hot carries in as-grown and annealed n- and p- type modulation-doped GaAs/Ga0.68In0.32NyAs1-y (y = 0.009, and 0.012) quantum well structures
considering acoustic phonon interactions via the deformation potential (non-polar) and piezoelectric (polar) scatterings. By analysis of the applied electric field dependent amplitude of the Shubnikov de Haas oscillations, it has been revealed that incorporation of N atom into Ga0.68In0.32As switches the dominant power loss mechanism from non-polar to polar mechanism. The piezoelectricity of n- and p- type Ga0.68In0.32NyAs1-y alloys is at least three times higher than N-free samples. A comparison between as-grown n- and p-type samples depicts that the p-type sample’s piezoelectricity is higher than that of n- type samples. After thermal annealing, there is a slight decrement and increment in piezoelectric stress constant for n-type the sample with 0.9% and 1.2% N, respectively.
