Figure - available from: International Journal of Photoenergy
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Model of multidiode solar cell module with vertically aligned p-n junctions. (a) initial; (b) after RIE and RF treatments. Light propagation regions are given in yellow.
Source publication
Si-based solar cells with vertically aligned p-n junctions operating at high voltage were designed and fabricated. The plasma treatments and antireflection coating deposition on the working surfaces of both single-and multijunction cells were made using the special holders. It was shown that additional treatment of solar cells in argon plasma prior...
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Citations
... A three-stage plasma treatment was applied to manufacture a single SC. At the first stage, reactive ion etching was carried out using CF 6 and Ar plasma in a PlasmaLab 80 device to decrease the thickness of the ptype Si wafer to the thickness corresponding to the light absorption depth in Si (10 − 4 m), as well as remove the surface broken layer, reduce elastic strain in the wafer, and decrease recombination of charge carriers in the wafer bulk [22]. ...
... The simulated curves were fixed when the correlation coefficient R 2 for fitted and measured curves built in logarithmic coordinates did not exceed 10%. The principle of the simulation we used is described in [22]. Based on the simulated results, the values of the shunt and the series resistance of the SCs were calculated. ...
In this work, flat solar cells with vertically aligned p-n junctions are designed. Luminescent down-shifting layers are used for enhancement of the solar cells’ efficiency. The solar cells are fabricated with the architecture of double aligned p-n junctions and contain additional coatings with CdTe/CdS luminescent nanocrystals. Current-voltage characteristics of the solar cells are measured using a solar simulator with a pulsed halogen light source. The influence of the average diameter of the CdTe/CdS nanocrystals in the series of 2.8, 3.6 and 4 nm and related to its emission at the wavelengths of 548, 609, and 642 nm, respectively, on the solar cells’ efficiency is studied and discussed. A flat solar cell with vertically aligned p-n junctions containing luminescent down-shifting layers of the nanocrystals that are 4.0 nm in diameter demonstrates a power conversion efficiency of 9% on an area of 1cm².
... The diffusion length, that is, the average path by which the electron-hole pair migrates statistically before recombination, is several hundred micrometers in crystalline silicon (c-Si). Solar cells of this thickness absorb all photons with energy greater than the band gap of c-Si (Semenenko et al. 2014(Semenenko et al. , 2016. This makes these devices extremely efficient. ...
Surface plasmon resonance (SPR) can be generated in metal nanostructures such as gold, silver, copper and aluminium, which are promising materials in the fields of optoelectronics and plasmonics. The SPR in periodic arrays has aroused great interest because of its uniform optical properties which can be applied in integrated optoelectronics device, including solar cells (SC). The optical spectra of structures with Ag nanoparticles on the surface of Si wafer were calculated. The simulation was carried out using finite-difference time-domain method (FDTD). The FDTD method is a powerful numerical algorithm for the direct solution of Maxwell's equations. As a source of radiation, a plane wave with a range of wavelengths 300–1240 nm is used. The enhancement of solar light absorption of structures with Ag nanoparticles has been demonstrated. The Localized Surface Plasmon Resonance peaks have been obtained in the wavelength range of 830–865 nm that is in good agreement with experimentally revealed one. It was shown that the period of Ag nanoparticles replacement significantly influences on the spectra and LSPR peak position. The measurement of current–voltage characteristics of solar cells with and without Ag nanoparticles demonstrated significant enhancement of short current density in case of AgNPs on SCs surface.
... For good down-conversion process one should have a layer placed on a top of solar cell (SC) with excited state close to the gap of c-Si (in our case we have Si-based solar cells with vertically aligned p-n junctions [1]). This leads to an increase of the SC efficiency because light which absorbed by coating re-emitted to p-n junction. ...
