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![Micrograph of the fabricated coupler-based switch [25].](publication/358181408/figure/fig10/AS:11431281099143017@1669219025173/Micrograph-of-the-fabricated-coupler-based-switch-25.png)
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![FIGURE 1. Schematic diagram of an SPDT switch with shunt topology [4].](publication/358181408/figure/fig1/AS:11431281099110922@1669219023730/Schematic-diagram-of-an-SPDT-switch-with-shunt-topology-4_Q320.jpg)
![FIGURE 2. Cross-section of the transistor in a CMOS SOI process [8].](publication/358181408/figure/fig2/AS:11431281099110923@1669219023990/Cross-section-of-the-transistor-in-a-CMOS-SOI-process-8_Q320.jpg)
In this paper the state of the art in RF switches for mm-wave frequency range is summarized and evaluated. Several leading technologies is presented from typical semiconductor devices based on transistors and diodes on Si, SiGe or III-V semiconductor substrates to more unconventional solutions such as microelectromechanical or phase-change material...
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... Millimeter-wave switches are an active area of research [53]. Due to space constraints, we will focus on circuits that are specifically targeted to loopback and test signal routing. ...
With automotive radar and 5G/6G communications, mass-market applications for millimeter-wave circuits in silicon technologies have been identified or established in recent years. For high-volume, millimeter-wave integrated circuits, operating roughly between 30 GHz and 300 GHz, testability is a major concern, both from an overall cost as well as a quality assurance perspective. A solution for cost effective, low-overhead test of millimeter-wave integrated circuits is the integration of built-in self-test (BIST) features into the high-frequency front-end. Because BIST is an emerging topic in high-frequency circuit design, the field is still very fragmented. A plethora of different system concepts as well as building blocks have been proposed in recent years. This paper tries to provide a comprehensive overview of the state of the art in millimeter-wave BIST in an attempt to drive the field towards identification of standardized self-test solutions.
... Researchers have investigated the integration of RF interfaces and antennas across multiple radio channels by using microwave switches [1][2][3][4]. Modern microwave switches require high switching speeds to rapidly route data over multiple radio channels, thereby minimizing routing delays [5][6][7][8][9][10][11]. Electronic microwave switches based on micro-electromechanical systems or solid-state diodes achieve switching times of microseconds or nanoseconds, respectively [5,6]. ...
... Researchers have investigated the integration of RF interfaces and antennas across multiple radio channels by using microwave switches [1][2][3][4]. Modern microwave switches require high switching speeds to rapidly route data over multiple radio channels, thereby minimizing routing delays [5][6][7][8][9][10][11]. Electronic microwave switches based on micro-electromechanical systems or solid-state diodes achieve switching times of microseconds or nanoseconds, respectively [5,6]. However, some photonic microwave switches offer superior performance, possessing switching speeds below 1 ns [7][8][9][10]. ...
Modern microwave switches require high switching speeds to rapidly route data over multiple radio channels while minimizing the routing delay. This Letter proposes a novel, to the best of our knowledge, microwave frequency switching system using phase-locked Period-one (P1) dynamics of semiconductor lasers. When a semiconductor laser is optically injected by microwave-modulated optical signals, which carry two-tone input microwaves at 29 and 37 GHz, with proper injection power controlled by dual-voltage control signals, P1 dynamics are excited in the semiconductor laser and subsequently phase-locked by one of the input microwave tones. We have observed positive and negative switching delays in the switching process. For instance, a positive delay is observed when the system requires additional optical power to transition from a phase-locked state at 29 GHz to an unlocked state. Conversely, a negative delay occurs when the unlocked P1 dynamics approach but do not reach a 37-GHz frequency and then rapidly lock to the tone, thereby surpassing the speed of the control signals. These dual delays are instrumental in enhancing the switching speed of our system, enabling it to surpass the voltage switching time of the control signals by a factor of 3.6. In addition, by leveraging these dual delays, the duration of the microwave tones can be further extended in the switching process.
... A single-pole single-throw (SPST) switch is a basic building block for signal control in RF systems as well as a part of multiple-throw switching circuits. In the literature, there are many examples of switch designs applying one of the two main topologies: shunt or series [12]. The most frequently used is shunt topology, where a switching element, typically a transistor or a diode, is used to create a short circuit in the transmission line. ...
This paper presents two designs of millimeter-wave single-pole single-throw switches based on AlGaN/GaN heterostructure. The switches are based on two approaches to the travelling wave concept with Schottky barrier shunt elements integrated into a coplanar waveguide. The first design utilizes a two-stage artificial transmission line topology with distributed shunt elements in Schottky diode configuration. The second one employs a single electrically large shunt element configured as a high electron mobility transistor. Both arrangements allow the switches to achieve very high operational bandwidth, exceeding 100 GHz, without the requirement for very high lithography resolution. Examined switches were fabricated in a 2-μm GaN-on-SiC process. Measurement results demonstrate upper operating frequencies exceeding 114.5 GHz starting from 14 GHz or even DC, depending on the design. The W band on-off ratio over 17 dB and 21 dB is achieved by the first and second construction, respectively. Measurements of transient parameters show that high switching speed can also be achieved (rise/fall time as low as ≤17 ns for the first construction).
... While several review papers have discussed the developments and advances of active metasurfaces and metamaterials [4][5][6]10], this work approaches this hot topic from a distinct aspect of semiconductors, including the conventional devices, such as diodes and transistors, and newly rising materials with low dimensions. The diodes and transistors have been widely applied in active microwave circuits for decades [16], and were demonstrated as a beneficial method for digital coding and programmable metamaterials in the last few years [4,11,12]. On the other hand, new semiconductor materials bring in many interesting advances, such as high modulation speed and nonvolatility, and enable promising applications in new spectra, such as terahertz [17]. ...
... Thus, its equivalent circuit is a voltage−controlled capacitor at microwave frequencies, as shown in Figure 1a, where parasitic inductor and resistor may need to be considered for precise simulation [11]. The commercially available varactor diodes packaged in Macom, Skyworks, etc., typically have a large package size in millimeter scales and a working frequency lower than 60 GHz [16]. In this case, they have been widely used in tunable and reconfigurable metamaterials at microwave frequencies, enabling many important applications of radar, communication, sensing, and imaging systems [3,[19][20][21][22]. ...
... In contrast to the varactor diodes, the PIN diodes are voltage−controlled resistors with parasitic capacitors (typically for the off−state) and inductors. Currently, commercially available PIN diodes have similar millimeter−scale package sizes as the varactor diodes and typically operate below 100 GHz [16]. Before active metasurfaces, they have been widely used in circuit switches, digital phase−shift circuits, and phased array antennas at microwave frequencies [16,[39][40][41]. ...
Active metasurfaces provide promising tunabilities to artificial meta−atoms with unnatural optical properties and have found important applications in dynamic cloaking, reconfigurable intelligent surfaces, etc. As the development of semiconductor technologies, electrically controlled metasurfaces with semiconductor materials and devices have become the most promising candidate for the dynamic and programmable applications due to the large modulation range, compact footprint, pixel−control capability, and small switching time. Here, a technical review of active and programmable metasurfaces is given in terms of semiconductors, which consists of metasurfaces with diodes, transistors, and newly rising semiconductor materials. Physical models, equivalent circuits, recent advances, and development trends are discussed collectively and critically. This review represents a broad introduction for readers just entering this interesting field and provides perspective and depth for those well−established.
This paper presents a highly-integrated novel silicon micromachined single-pole-single-throw waveguide switch based on two microelectromechanically reconfigurable switching surfaces (MEMS-RSs), which allows optimizing the switching performance by tuning the interference between the two such MEMS-RSs utilizing integrated electrostatic comb-drive actuators. The switch prototype is implemented with axially aligned standard WR-3.4 waveguide ports with a total footprint of 3mmx3.5mmx1.2mm. The measured blocking (OFF) state insertion loss (isolation) and return loss, measured between two standard WR-3.4 waveguide flanges, are 28.5-32.5 dB and better than 0.7 dB, and the propagating (ON) state insertion and return losses are 0.7-1.2 dB and better than 17 dB in the 220-290 GHz frequency band, respectively. The measured results were in excellent agreement with the simulation data, implying 27.5% fractional bandwidth, which is very close to a full waveguide band performance. For further investigations, two variants of the switching circuit with only a single MEMS-RS and without any MEMS-RSs have also been fabricated. The single MEMS-RS switch achieved the OFF-state isolation, ON-state insertion loss, and return loss of only 11.5-12.5 dB, 0.8-1.3 dB, and better than 12 dB from 220 to 274 GHz, respectively, which clearly indicates the drastic performance improvement of the interference-based double MEMS-RSs switch design. Moreover, measurement of the waveguide-only reference structure showed that the waveguide section alone, attributed to 0.2-0.5 dB of the measured ON-state insertion loss of the double MEMS-RSs switch, and the rest is due to the introduction of the MEMS-RSs inside the waveguides.
This work presents a wideband passive variable voltage-controlled attenuator (VVA) to control signal powers in the
$J$
-band. The VVA is manufactured in a 130-nm BiCMOS technology with f
$_\textbf{T}$
/ f
$_\textbf{max}$
$=$
300 / 500 GHz. The design is based on a distributed T-attenuator architecture. The design methodology aimed to achieve a wide bandwidth (BW) across attenuation states while maintaining low minimum insertion loss (IL) in compact silicon area. Hence, a distributed inductor-based approach is followed rather than the series varistors or transmission line architectures. The VVA is capable of handling P
$_\textbf{in}$
up to 18 dBm with a compression of 0.5 dB. A minimum IL of 5.5 dB was measured within a 3-dB BW of 60 GHz (200–260 GHz) across 13 dB of the voltage-controlled attenuation range. The core circuit occupies 0.015 mm
$^2$
of silicon area. To the best of the authors’ knowledge, this is the first presented VVA at this frequency range suiting very well highly linear wideband VGAs for sub-THz transmitters (TXs).
The evolution of electronics has largely relied on downscaling to meet the continuous needs for faster and highly integrated devices¹. As the channel length is reduced, however, classic electronic devices face fundamental issues that hinder exploiting materials to their full potential and, ultimately, further miniaturization². For example, the carrier injection through tunnelling junctions dominates the channel resistance³, whereas the high parasitic capacitances drastically limit the maximum operating frequency⁴. In addition, these ultra-scaled devices can only hold a few volts due to the extremely high electric fields, which limits their maximum delivered power5,6. Here we challenge such traditional limitations and propose the concept of electronic metadevices, in which the microscopic manipulation of radiofrequency fields results in extraordinary electronic properties. The devices operate on the basis of electrostatic control of collective electromagnetic interactions at deep subwavelength scales, as an alternative to controlling the flow of electrons in traditional devices, such as diodes and transistors. This enables a new class of electronic devices with cutoff frequency figure-of-merit well beyond ten terahertz, record high conductance values, extremely high breakdown voltages and picosecond switching speeds. This work sets the stage for the next generation of ultrafast semiconductor devices and presents a new paradigm that potentially bridges the gap between electronics and optics.
This paper presents three types of single-pole single-throw RF switches utilizing AlGaN/GaN Schottky junction as distributed switching elements integrated in a coplanar waveguide structure. The switches are designed in shunt topology, which allows to achieve good high frequency performance. First type of switch is driven through RF port, while the remaining ones are driven by a separate electrode. The designs with separate driving electrode allow operation in a very broad frequency band down to DC. The third design further improves the switch performance by eliminating impedance discontinuities in the signal path. The best performance is achieved by the third design with 18 dB on-off ratio and 4.5 dB insertion loss at 50 GHz, as well as less than −14 dB reflection coefficient in the 10 MHz – 50 GHz frequency range. Observed performance improvement at high frequency indicates a good perspective for this kind of switch for higher frequencies up to the sub-terahertz band.
The design and performance of a sub-Terahertz (THz) single-pole double-throw (SPDT) waveguide switch is presented, operating from
$\rm{250 \,GHz}$
to
$\rm{310 \,GHz}$
. The piezo-motor actuated switch is suitable for high-fidelity calibration of THz spectroscopy and radiometry instruments, thanks to its low insertion loss,
$\rm{< -0.6 \,dB}$
, low return loss,
$\rm{< -20 \,dB}$
, and high isolation,
$\rm{< -75 \,dB}$
. The high isolation and low leakage is achieved by using an array of rectangular metal pillars surrounding the waveguide apertures, that act as an electromagnetic band gap (EBG) structure in the proximity of the switching element. The switching element is controlled with micro-metric precision to direct the signal through a U-bend waveguide to either one of the two output waveguide apertures. The reliability and durability of the switch is tested by performing one million switch actions at its maximum switching rate of
$\rm{1 Hz}$
, resulting in a mean positioning error better than
$\rm{2\, \mu m}$
.
