Figure 1 - uploaded by John M Girkin
Content may be subject to copyright.
Micrograph image of CMOS chip with bump-bonded micro-LED array. 

Micrograph image of CMOS chip with bump-bonded micro-LED array. 

Source publication
Article
Full-text available
We describe a single chip approach to time resolved fluorescence measurements based on time correlated single photon counting. Using a single complementary metal oxide silicon (CMOS) chip, bump bonded to a 4 × 16 array of AlInGaN UV micro-pixellated light-emitting diodes, a prototype integrated microsystem has been built that demonstrates fluorescenc...

Context in source publication

Context 1
... use of fluorescence-based methodologies is at the core of many modern instrumentation technologies, especially in the life sciences. Originally, the interest was in the specific labelling of biological samples for imaging applications, but more recently this has expanded rapidly with the growth of DNA sequencing and micro-array applications. In principle, the equipment needed for such spectroscopic instrumentation has not changed over several decades, in that a narrow wavelength source is required to excite the fluorophore of interest and the resulting fluorescence must pass through an optical device to separate the excitation light from the fluorescence emission, before being detected by a light sensitive instrument and the level of fluorescence determined. However, using modern fabrication and manufacturing techniques, such instrumentation can now be made in complete integrated systems with the potential for volume production. The range of methods for interpreting the fluorescence data has also expanded with the growth of fast electronics, originally destined for the telecommunications and computer markets, now being applied to fluorescence instrumentation. Most commonly used fluorophores are designed to be excited in the near ultraviolet (UV) and blue regions of the optical spectrum. The advent of GaN and other blue emitting semiconductor sources, around 15 years ago [1], has helped stimulate interest in the use of such sources in place of lasers or mercury discharge lamps for excitation in fluorescence-based instrumentation. The advantages of these sources include low cost, reliability, compactness and good wavelength matching to many standard fluorophores. In addition, their ability to produce short ( ≈ 1 ns) pulse lengths offers the opportunity for low cost fluorescence lifetime measurements. It has been appreciated for a long time [2] that the fluorescence decay from a molecule provides a significant level of information about the sample and the surrounding conditions of the fluorophore, from the local viscosity in cell membranes [3] to pH [4]. Most recently interest has been in the rapid growth of Föster resonance energy transfer (FRET) methods, where the spatial separation of two fluorescent molecules significantly affects the fluorescence lifetime of the shorter wavelength ‘donor’ molecule. Through advances in molecular chemistry, FRET based assays and experiments utilizing lifetime measurement as the monitor of the FRET process are emerging as the method of choice for many applications in the life sciences [5]. Several methods of lifetime measurement are now in common use in lifetime instrumentation, but all require the common features of a short pulsed, or high frequency modulated, light source, fast detector and timing electronics. Time correlated single photon counting (TCSPC) is potentially the most accurate method of determining complex decays (multiple lifetimes) and was therefore the method selected to demonstrate the performance of our system. The phase method, in which the phase change in the fluorescence emission relative to the excitation pulse is measured [6], is less sensitive compared with TCSPC and applies more light to the sample which can lead to faster sample decomposition. A slight variation on TCSPC is the use of time gated detectors which provide a slightly less accurate lifetime measurement, but are excellent at providing a method of detecting changes in lifetime [7]. More recently, a variation on the phase method has been developed, whereby the change in output intensity is measured [8]. This method uses a slow detector and thus was not suitable in a system that makes use of rapid detectors. Therefore, we chose the TCSPC method as we believed that this would demonstrate the capability of our novel excitation source and detector. Furthermore, if the system worked in this configuration it should also work in the slightly less demanding phase and gated configurations, though these might be the preferred options in a final instrument configuration. In 1995, Araki and Misawa [9] and in 2005, Davitt et al [10] both reported the use of light-emitting diodes (LEDs) for lifetime measurements; however, their system used a conventional photomultiplier. Although this work demonstrated the capability of LEDs for lifetime measurements with the use of a photomultiplier as the detector, the system was not capable of low cost miniaturization. In this paper, we describe a single chip embodiment for such measurements based on time correlated single photon counting. In our approach, a 16 × 4 array of micro- pixel AlInGaN LEDs emitting at 370 nm [11] has been bonded to an equivalent array of aluminium electrodes made from the top metal of a 0.35 μ m high-voltage CMOS chip. Each electrode has an associated driver circuit capable of switching up to 50 V. Incorporated into each electrode is a single photon avalanche diode (SPAD). The output of the SPAD detectors is processed in real time by a TCSPC module that generates a histogram of the fluorescence decay [12]. Other pertinent features of the CMOS chip include on-chip control of the micro-LED pulse width (1.5–48 ns optical pulse width) and the ability to separately address any micro-LED or SPAD in the array. With this device, we have successfully performed demonstration measurements in a colloidal suspension of quantum dots, achieving lifetimes consistent with manufacturer’s specifications and our own reference measurements taken using a photomultiplier tube detector. This microsystem solution will enable the development of low cost, portable fluorescence lifetime readers for many optical lab-on-a-chip applications such as point-of- care diagnostics equipment and the synthesis and/or read out of DNA micro-arrays. With each element being separately addressable, there is the potential to excite many fluorescent samples in parallel [11]. By integrating the excitation source with a photodetector and on-chip driving electronics, our devices will contribute to the development of lab-on-a-chip (LoC) systems [13]. This includes work by Chodavarapu et al [14], which aims to carry out fluorescence detection using a CMOS-based system which incorporates a detector with signal processing circuitry. Their system does not, however, include an integrated excitation source and uses a discrete LED. Cleary et al [15] demonstrated TCSPC on a micro- scale using integrated optics and microfluidics; however, their system relies on a pulsed diode laser as an excitation source and a discrete SPAD detector. The system presented here offers a greater level of integration, placing the excitation source in the same micro-scale system as the sample and detector. A micrograph image of the CMOS chip with bump-bonded micro-LED array can be seen in figure 1. The micro-LEDs consist of a 16 × 4 array of individually addressable pixels, each pixel having a diameter of 72 μ m on a 100 μ m pitch. The devices were fabricated from ‘standard’ UV LED wafers grown on c -plane sapphire substrates by metal organic chemical vapour deposition and have a peak emission at 370 nm [16]. The array of electrodes was depassivated by pad opening at the foundry to reveal the aluminium top- plate electrodes for bump bonding. A post-processing step of oxygen plasma etching removed the polyimide layer of the chip which has been shown to improve the photon detection probability (PDP) of the underlying SPADs by a factor of 2–5 [17]. An example of the top metal driver plates can be seen in figure 2. An electrical connection between the ...

Similar publications

Article
This paper describes a simulation model (implemented in MATLAB) of a typical setup used for time-resolved fluorescence measurements, including: a laser source, basic fluorescence sample, optics, single-photon avalanche diode and read-out electronics. The correctness of the model has been verified by setting up a simple time-resolved fluorescence me...

Citations

... CMOS driver circuits: The CMOS driver circuit is an active matrix driver circuit commonly used in LCDs and other electronic devices [30,31]. CMOS driver circuits typically include a driver chip, p-MOS and n-MOS transistor arrays, and power and signal lines. ...
Article
Full-text available
Micro-LED is considered an emerging display technology with significant potential for high resolution, brightness, and energy efficiency in display applications. However, its decreasing pixel size and complex manufacturing process create challenges for its integration with driving units. Recently, researchers have proposed various methods to achieve highly integrated micro-structures with driving unit. Researchers take advantage of the high performance of the transistors to achieve low power consumption, high current gain, and fast response frequency. This paper gives a review of recent studies on the new integration methods of micro-LEDs with different types of transistors, including the integration with BJT, HEMT, TFT, and MOSFET.
... The planar format of LED pixel arrays allows them to be directly interfaced with electronic drive chips, for example through flip-chip bonding [21]. Arrays of LEDs with individual pixel control electronics represent a new form of compact micro-display/projector [18]. ...
Article
Digital light projector systems are crucial components in applications, including computational imaging, fluorescence microscopy, and highly parallel data communications. Current technology based on digital micromirror displays are limited to absolute frame rates in the few tens of kiloframes per second and require the use of external light sources and coupling optics. Furthermore, to realize gray-scale pixel values using duty cycle control, frame rates are reduced proportionally to the number of gray levels required. Here we present a self-emissive chip-scale projector system based on micro-LED pixels directly bonded to a smart pixel CMOS drive chip. The 128 × 128 pixel array can project binary patterns at up to 0.5 Mfps and toggle between two stored frames at megahertz rates. The projector has a 5-bit gray-scale resolution that can be updated at up to 83 kfps, and can be held in memory as a constant bias for the binary pattern projection. Additionally, the projector can be operated in a pulsed mode, with individual pixels emitting pulses down to a few nanoseconds in duration. Again, this mode can be used in conjunction with the high-speed spatial pattern projection. As a demonstration of the data throughput achievable with this system, we present an optical camera communications application, exhibiting data rates of > 5 Gb / s .
... Chip-scale integration of an LED (light-emitting diode) light source is an important part of miniaturizing a spectroscopic system. However, very few works have been carried out to address this need [5,[30][31][32][33]. The main challenges include the heterogeneous integration of different material platforms for the light source and detectors, the already considerable size of the optical detection system preventing further integration of the light source, and interference between the light source and the spectral signal. ...
Article
Full-text available
A semiconductor spectrometer chip with a monolithically integrated light-emitting diode was demonstrated. The spectrometer design was based on a computational reconstruction algorithm and a series of absorptive spectral filters directly built in to the photodetectors’ active regions. The result is the elimination of the need to employ external optics to control the incident angle of light. In the demonstration, an array of gallium nitride (GaN) based photodetectors with wavelength selectivity generated via the principle of local strain engineering were designed and fabricated. Additionally, a GaN based LED was monolithically integrated. An optical blocking structure was used to suppress the LED-photodetector interference and was shown to be essential for the spectroscopic functionality. A proof of concept using a reflection spectroscopy configuration was experimentally conducted to validate the feasibly of simultaneously operating the LED excitation light source and the photodetectors. Spectral reconstruction using a non-negative least squares (NNLS) algorithm enhanced with orthogonal matching pursuit was shown to reconstruct the signal from the reflection spectroscopy. Optics-free operation was also demonstrated.
... The planar format of LED pixel arrays allows them to be directly interfaced with electronic drive chips, for example through flip-chip bonding [21]. Arrays of LEDs with individual pixel control electronics represent a new form of compact micro-display/projector [18]. ...
Preprint
Digital light projector systems are crucial components in applications including computational imaging, fluorescence microscopy and highly parallel data communications. Here we present a chip-scale projector system based on emissive micro-LED pixels directly bonded to a smart pixel CMOS drive chip. Enabled by the high modulation bandwidth of the LED devices, the 128x128 pixel array can project binary patterns at up to 0.5 Mfps and toggle between two stored frames at MHz rates. The projector has a 5-bit grayscale resolution that can be updated at rates up to 83 kfps, and can be held in memory as a constant bias for the binary pattern projection. Finally, the projector can be operated in a pulsed mode, with individual pixels emitting pulses down to a few nanoseconds in duration. Again, this mode can be used in conjunction with the high-speed spatial pattern projection. The design of the smart pixels and LED devices are presented along with measurements of each mode of operation. As a demonstration of the data throughput achievable with this system we present an optical camera communications application, exhibiting data rates of >5 Gbps, over three orders of magnitude improvement on current demonstrations.
... Finally, heterogeneous integration of multiple layers or chip components onto one single substrate is also one major driving force for developing layer and chip transfer techniques [106,[175][176][177]. The layer and chip transfer techniques allow the assembly of hybrid devices with expanded functionalities that could not be otherwise realized by using individual devices. ...
Article
Full-text available
Hetero-integration of functional semiconductor layers and devices has received strong research interest from both academia and industry. While conventional techniques such as pick-and-place and wafer bonding can partially address this challenge, a variety of new layer transfer and chip-scale transfer technologies have been developed. In this review, we summarize such transfer techniques for heterogeneous integration of ultrathin semiconductor layers or chips to a receiving substrate for many applications, such as microdisplays and flexible electronics. We showed that a wide range of materials, devices, and systems with expanded functionalities and improved performance can be demonstrated by using these technologies. Finally, we give a detailed analysis of the advantages and disadvantages of these techniques, and discuss the future research directions of layer transfer and chip transfer techniques.
... We now describe how ultra-compact fluorescence lifetime measurement devices were demonstrated by the integration of micro-LEDs with CMOS and SPAD technology. In (Rae et al., 2008) a 16Â 4 array of 72 μm micro-LEDs emitting at 370 nm were fabricated and integrated with a CMOS driver array using a bump-bonding process as described in Section 3.2.1. Each of the micro-LED driver sites contained an addressable SPAD detector pixel. ...
Chapter
This chapter provides a general summary of micro-LED technology related to its use in biomedical applications. It uses specific examples as illustration and is not meant to be an exhaustive review. First, the fabrication and format of micro-LEDs are discussed as well as their spectral, temporal and optical output characteristics. This is followed by a description of chip-scale microfluorimetry and its enabling elements, namely the short (ns) pulsing and high-speed modulation capabilities of the devices, and their compatibility with CMOS-based drive electronics, and single-photon avalanche photodiodes for time-correlated single photon counting. The application of the technology to optoelectronic tweezers is then discussed, showing that light patterns projected onto photoconductive electrodes can be used to manipulate and interrogate populations of biological cells. How micro-LEDs can be integrated onto mechanically flexible dressings and bandages, and how this technology can be applied, is then explained. Finally a summary of developments in optogenetics and neural interfacing is given.
... Luminescence lifetime measurements are powerful investigation tools emerging in the detection of biological science, whose principle is that different organic compounds have different fluorescent properties [1][2][3]. Through the detection and analysis of the fluorescence lifetime of biological samples, the composition and distribution of various substances in the sample can be distinguished [4], allowing imaging of molecular processes in physics and providing convenience for life science research [5]. For practical purposes, most studies focus on the fluorescence lifetime from hundreds of picoseconds to hundreds of nanoseconds because the fluorophores with shorter and longer lifetimes suffer from weak emitters and low photon turnover rates, respectively, causing the limited sensitivity and longer acquisition time [6]. ...
Article
Full-text available
A novel three-observation-window time-gated algorithm that combines overlapped windows and discrete windows together is developed for accurate fluorescence lifetime extraction. The new algorithm adopting a rapid lifetime determination strategy can offer an excellent ability to precisely detect long fluorescence lifetime for fluorescence lifetime imaging microscopy. Monte Carlo simulation indicates that an extremely small relative standard deviation below 0.4% is obtained over a wide fluorescence lifetime range from 5 ns to 30 ns. The detection error of the short fluorescence lifetime less than 5 ns is further reduced by means of an adaptive window width method. In contrast to other algorithms, such as time-correlated single-photon counting and traditional gated-window methods, not only the detection range but also the measurement accuracy is dramatically enhanced.
... 14(a)-14(f)]. [298][299][300] In terms of the sensing system architecture, there are at least two different options that can be considered depending on the location of the SPAD and the capturing process of the emitted fluorescence light {i.e., reflection mode [see Fig. 14 For reflection mode, the fluorescence sample is located on top of the flipped transparent sapphire substrate [ Fig. 14(b)]. Thus, once the sample has been excited by the light coming from the micro-LEDs, any returning or reflected fluorescence light will pass through the stack of LED layer and its sapphire substrate, approaching the SPAD array Fig. 14(g). ...
Article
Full-text available
Gallium nitride (GaN) light-emitting-diode (LED) technology has been the revolution in modern lighting. In the last decade, a huge global market of efficient, long-lasting, and ubiquitous white light sources has developed around the inception of the Nobel-prize-winning blue GaN LEDs. Today, GaN optoelectronics is developing beyond solid-state lighting, leading to new and innovative devices, e.g., for microdisplays, being the core technology for future augmented reality and visualization, as well as point light sources for optical excitation in communications, imaging, and sensing. This explosion of applications is driven by two main directions: the ability to produce very small GaN LEDs (micro-LEDs and nano-LEDs) with high efficiency and across large areas, in combination with the possibility to merge optoelectronic-grade GaN micro-LEDs with silicon microelectronics in a hybrid approach. GaN LED technology is now even spreading into the realm of display technology, which has been occupied by organic LEDs and liquid crystal displays for decades. In this review, the technological transition toward GaN micro- and nanodevices beyond lighting is discussed including an up-to-date overview on the state of the art.
... Further investigations with this design, including bonding to a complementary metal oxide silicon (CMOS) backplane, have been reported. 34,35 In 2011, Day et al. demonstrated flip-chip blue (462 nm) and green (517 nm) μLED displays on CMOS can achieve orders of magnitude higher luminance level than LCDs and OLED displays, while maintaining outstanding performance in intense temperature range from −100°C to 100°C. 36 The μLED arrays were bonded onto CMOS to form active matrix microdisplays with indium bonding, where each device was 12 × 12 μm 2 with a pitch of 15 μm between indium bonds as shown in Fig. 1. ...
Article
Full-text available
The developments of high performance InGaN based micro-light-emitting diodes (μLEDs) are discussed. We first review the early demonstrations of μLEDs and the state-of-the-art outstanding achievements on the emerging high-quality display and visible-light communication applications. Due to the miniature dimensions of μLEDs, the key understandings and the significant device advancements to achieve excellent energy efficiency are addressed. Lastly, two other critical challenges of μLEDs, namely full-color scheme and mass transfer technique, and their potential solutions are explored for future investigations.
... Considerable gains have been achieved thanks to the integration of microfluidics [19][20][21][22] and sensing microtechnologies like Complementary Metal-Oxide-Semiconductor Single-Photon Avalanche Diodes (CMOS SPADs) [23][24][25][26], but the obtained prototypes either require bulky optical setups with filters, lens, or optical fibers to guide the light [2,16,17,25,[27][28][29][30] or suffer loss of sensitivity [26] or increased measurement time [8]. Very compact analysis systems have been reported [31][32][33], but they still require a filter to subtract the excitation light source and an expensive Time Correlated Single Photon Counting (TCSPC) card to build the histogram of the decay time. ...
Article
Full-text available
We describe the integration of techniques and technologies to develop a Point-of-Care for molecular diagnosis PoC-MD, based on a fluorescence lifetime measurement. Our PoC-MD is a low-cost, simple, fast, and easy-to-use general-purpose platform, aimed at carrying out fast diagnostics test through label detection of a variety of biomarkers. It is based on a 1-D array of 10 ultra-sensitive Single-Photon Avalanche Diode (SPAD) detectors made in a 0.18 μm High-Voltage Complementary Metal Oxide Semiconductor (HV-CMOS) technology. A custom microfluidic polydimethylsiloxane cartridge to insert the sample is straightforwardly positioned on top of the SPAD array without any alignment procedure with the SPAD array. Moreover, the proximity between the sample and the gate-operated SPAD sensor makes unnecessary any lens or optical filters to detect the fluorescence for long lifetime fluorescent dyes, such as quantum dots. Additionally, the use of a low-cost laser diode as pulsed excitation source and a Field-Programmable Gate Array (FPGA) to implement the control and processing electronics, makes the device flexible and easy to adapt to the target label molecule by only changing the laser diode. Using this device, reliable and sensitive real-time proof-of-concept fluorescence lifetime measurement of quantum dot QdotTM 605 streptavidin conjugate is demonstrated.