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This paper presents an analytical modeling of a MOSFET during switching operation, aimed at determining the switching losses. Moreover it compares the theoretical results with experimental data. The switching losses are calculated for different DC link voltages and load currents. The stray inductances and capacitances of the MOSFET were considered...
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Citations
... where Rrec_sd is the conducting resistance of the MOSFETs in the rectifier, which can be found or fitted from the datasheet of the MOSFET. Meanwhile, with the VAPS modulation method, Prec_sw can be expressed as [42], [43] ( ) ...
In Wireless Power Transfer (WPT) system for Light Electric Vehicles (LEVs), adopting dual receivers on the receiver side is an available way to offer a high-current power supply. In this paper, the Partial Power Processing (PPP) control method is proposed for optimizing the power loss of the dual-receiver WPT system. With the PPP control method, only one of the active rectifiers will be regulated by the variable angle phase shift (VAPS) modulation to adjust the required power under different load power de-mands and misalignment situations. As a result, the switching loss of the two active rectifiers, which accounts for a considerable part of the overall power loss with a high operating frequency, can be dramatically reduced. At last, 24V-50A-1200W LEV wireless charging experimental setup to verify the effectiveness of the proposed PPP control method. Compared with the conventional power distribution method based on impedance matching with VAPS, the proposed PPP control method can increase the efficiency by 6~7% with misalignment situations, achieving the overall efficiency as high as >92% at the heavy load.
... In a complicated resonance process, the impact of individual inductances (L d , L g , L s ) on the oscillation is different. Analytical (Xiao et al., 2004;Ren et al., 2006;Zhang et al., 2008;Li et al., 2011;Wang et al., 2012;Alexakis et al., 2013;Raee et al., 2013;Takao and Ohashi, 2013;Azizouglu and Karaca, 2014;Nayak and Hatua, 2016;Xie et al., 2016) and empirical methods (Chen, 2009;Chen et al., 2010;Zhang et al., 2012;Chen et al., 2013a;Stewart et al., 2013;Wada et al., 2013;Anthon et al., 2014;Noppakunkajorn et al., 2014;Noppakunkajorn et al., 2015;Walder and Yuan, 2015;Wang X. et al., 2017) have been reported that investigated the impact of different parasitic inductance on oscillation. As shown in Figure 3B, it is concluded that the impact of L g on damped oscillation is negligible and the main contributor is L d (Chen, 2009;Khanna et al., 2013). ...
Wide bandgap (WBG) devices are becoming increasingly popular due to their excellent material properties. WBG devices are commercially available in discrete and module packages. Many studies have investigated the design, structure and benefits of module packages. However, a comprehensive and in-depth overview of the discrete package is lacking. Discrete package has the advantages of flexibility, scalability and reduced cost; however, challenges of severe switching oscillations and limited current capacity are associated with it. This review encompasses the switching oscillations and limited current capacity issues of discrete devices. Switching oscillations are categorized in terms of voltage. The underlying oscillation mechanisms are explored in detail. For the current imbalance, the types, root causes and adverse effects in parallel-connected discrete devices application are reviewed. Besides, the most recent techniques to extract stray parameters are also explored. Finally, state-of-the-art methods to mitigate the switching oscillations and the current imbalance are summarized and evaluated. The performance improvement strategies discussed in this paper can assist researchers to better use the discrete package and can stimulate them to come up with new solutions.
... The power converter is simulated using the static characteristics of the chosen devices. The power losses of the switches and the diodes are calculated using the method presented in [27]. ...
Thanks to the absence of the rotor windings
and the permanent magnets, switched reluctance motors
have a small weight construction. The integration of the
modular power converter in the switched reluctance motor
leads to a highly compact and fault-tolerant motor drive
with small weight and high power density. In this paper,
a polygon retrofitted integration topology is proposed for
switched reluctance motors. Both the switched reluctance
motor and the power converter are cooled with one shared
cooling circuit. The power converter is designed and implemented
using Silicon Carbide (SiC) technology for its
low losses and small thermal resistance. The proposed
integration topology is extensively studied using multiphysics
modelling and experimental measurements on a
fully integrated rotating setup. A highly compact and power
dense drive of 3.1 kW/litre is obtained.
... However, the parasitics in the circuit can alter the voltage and current behaviour and hence change the switching losses. A simple approach is to include the parasitic loop inductance of the drain source path in the power circuit which produces an undershoot of voltage during the current turn-on and an overshoot during the current turn-off[3,15]. These parasitics are included in the simulation model which is shown inFig. ...
In this paper, a comparative performance evaluation of a 1.2 kV SiC MOSFET module and a 1.2 kV Si IGBT module is carried out under a series of different conditions such as similar dv/dt, di/dt, voltage overshoot, current overshoot, and ringings. Both the modules are commercially available in a standard plastic package and have the same stray inductances. Various parameters such as switching speed, energy loss, and overshoots are experimentally measured in order to address the comparative advantages and disadvantages of the selected modules. This paper demonstrates that SiC MOSFET can replace Si IGBT of similar voltage class or even higher voltage class, both in slow and fast switching applications.
... However, the parasitics in the circuit can alter the voltage and current behaviour and hence change the switching losses. A simple approach is to include the parasitic loop inductance of the drain source path in the power circuit which produces an undershoot of voltage during the current turn-on and an overshoot during the current turn-off [3,15]. These parasitics are included in the simulation model which is shown in Fig. 2. The switching transient obtained from the lab experiment is compared with the LTSpice simulations for a similar current/voltage rating in Fig. 3. Fig. 3 (d) show the turn-on and turn-off switching transients from laboratory test at a dc-link voltage of 300 V and a drain-source current of 10 A in each SiC MOSFET (CMF20120) at 25 • C. The current and voltage probes are fully compensated prior to the measurement, and the phase delays between the probes are deskewed. ...
Integrated modular motor drives have a compact and high fault tolerant structure compared to their conventional counterparts. The most challenging issue in the implementation of these drives is the thermal management of the inverter modules due to the small space available for each module and its physical proximity to the machine windings with their high heat production. The electro-thermal design of a discrete half-bridge inverter module for a radially stator mounted axial flux integrated drive is introduced in this paper. The inverter modules are mounted on the stator, radially along the circumference. The converter is implemented using GaN technology and the size is optimized. The structure of the presented integration topology from the case of the switches to the cooling ambient is optimized from the thermal point of view. The converter is modelled using steady state and transient lumped parameter thermal networks to estimate the steady state and the instantaneous temperature of the switches. The converter parasitics are extracted using FEM simulations and their influence on the switch loss and temperature is evaluated. The lumped parameter modelling is validated with CFD simulations and experimental measurements.
High-frequency power converters enabled by wide bandgap (WBG) and silicon semiconductor devices offer distinct advantages in power density and dynamic performance. However, switching oscillations are commonly observed in these circuits with undesirable consequences. This paper reviews the impacts, root causes, and mitigation techniques of switching oscillations through literature survey, modeling analysis, and experimental investigation. We categorize the following root causes for oscillations during switching transients: 1) damped oscillation triggered by high
di/dt
and/or
dv/dt
coupled with parasitic elements; 2) undamped oscillation of WBG devices as part of a negative resistance oscillator; and 3) semiconductor device physical mechanisms such as the negative capacitance phenomenon due to conductivity modulation in insulated gate bipolar transistors or impact ionization in MOSFETs, the plasma extraction transit-time effect in bipolar power devices, and the reverse conduction property of GaN HEMTs. Furthermore, this paper discusses various circuit techniques to suppress switching oscillations, and techniques of extracting parasitic inductances of power devices.
