Fig 2 - uploaded by P. Szczepanski
Content may be subject to copyright.
MMI-based components a) general MMI structure b) 1 × 2 (3 dB) power splitter c) 2 × 2 (3 dB) power coupler d) power splitter with asymmetric (85%:15%) splitting ratio. Acknowledgement to PhoeniX Software BV for the license  

MMI-based components a) general MMI structure b) 1 × 2 (3 dB) power splitter c) 2 × 2 (3 dB) power coupler d) power splitter with asymmetric (85%:15%) splitting ratio. Acknowledgement to PhoeniX Software BV for the license  

Source publication
Article
Full-text available
In this work a brief review on photonic integrated circuits (PICs) is presented with a specific focus on integrated lasers and amplifiers. The work presents the history of development of the integration technology in photonics and its comparison to microelectronics. The major part of the review is focused on InP-based photonic integrated circuits,...

Citations

... InP PIC offers solutions for high-speed computing and data transmission due to excellent electro-optical properties [7]. Thus, it allows efficient light generation and detection, light guiding and fast phase modulation, allowing built-in active components such as lasers and optical amplifiers [4,8]. ...
Article
Full-text available
The authors propose a 2 × 2 asymmetric adiabatic coupler (AAC) indium phosphide (InP) photonic integrated circuit (PIC), suitable for tunable power applications such as all-optical data processing. The device was idealised as the key building block in Haar transform network used for image compression, allowing to perform the necessary separate addition and subtraction of incoming input signals at its output ports. The tunable behaviour of the coupler was demonstrated experimentally for addition/subtraction and splitting (with experimental coupling ratios of 77:23/14:86 and 50:50, respectively) through phase control. The use of the developed InP PIC enables a low footprint structure design together with the high-quality active components (lasers, photodetectors and phase modulators) of Fraunhofer Gesellschaft Heinrich Hertz Institute design toolkit. The proposed study provides a full experimental characterisation of the AAC, exploring its tuning properties and enabling further usage in a plethora of applications in high processing computing and data communications.
... In the last years this trend has reached a point in which chips with a few centimetre size integrate billions of elements [2]. In parallel, a similar tendency towards miniaturization and integration has been characterizing the field of photonics shorty after the demonstration of the first III-V semiconductor laser diode in 1962 [3], which shortly followed the invention of the laser in 1960 [4] and that of the Light-Emitting Diode (LED) in 1955 [5]. ...
... Despite these advantages, a monolithic III-V semiconductor-on-oxide platform is still lacking. To overcome this limitation, hybrid III-V-on-SOI platforms were successfully demonstrated, despite the burden of the required non-monolithic bonding step, allowing to integrate on the same chip mode-locked lasers and Si passive elements [2]. ...
... ❼ Chapter 5 goes beyond χ (2) nonlinear effects by single nanoantennas and introduces the measurements performed on advanced structures specifically designed to enhance the SHG yield, namely nanodimers and hybrid AlGaAs-Au nanostructures. Subsequently, nonlinear SFG measurements carried out on transparent AlGaAs metasurfaces is described, as well as some preliminary results on SFG-based nonlinear imaging. ...
Thesis
Full-text available
All-dielectric nonlinear meta-optics is attracting a great deal of interest thanks to the feasibility of high refractive-index contrast nanostructures available with semiconductor lithography. While third order nonlinear effects have been reported in silicon-on-insulator nanoantennas, the AlGaAs-on-insulator platform has recently enabled the demonstration of second harmonic generation, owing to the non-centrosymmetry of this material. This PhD thesis illustrates our recent activity on AlGaAs-on-AlOx nonlinear nanoantennas, where AlOx is obtained from selective wet etching of micrometer-thick aluminium-rich AlGaAs epitaxial layer. Such a low refractive index substrate allows to effectively decouple the nanoantenna modes from the underlying GaAs (100) wafer. The thesis first introduces the numerical, experimental and technological methods employed. Afterwards, a review of the results obtained in nonlinear signal generation in single nanoantennas and in complex structures is given. All our experimental results pave the way towards nonlinear signal generation and manipulation at the nanoscale, and point towards applications such as nonlinear holography, background-free goniometry and night vision.
... Monolithically integrated multi-wavelength lasers (MWLs) are key components for optical comb sources and wavelength-division multiplexing (WDM) systems [2]. Such MWLs require a high stability in order to support high-order modulation formats [3]. ...
Article
Full-text available
An InP-based, monolithically-integrated multi-wavelength laser with optical feedback is presented. We demonstrate performance of dual-wavelength operation. Single-mode lasing is obtained for each of the two channels over ranges of 14 °C and 40 mA without mode-hopping. This is due to the combined filtering functions of an arrayed waveguide grating and a distributed Bragg reflector. A method that makes use of weak optical feedback is demonstrated to improve the stability of each single-mode. With this method, sustained relaxation oscillations that are excited by on-chip parasitic reflections are damped and linewidths in both channels are narrowed to around 400 kHz compared to the linewidth of 1MHz which is obtained when no feedback is applied. The suppression ratio of the relaxation-oscillation-induced side peaks is measured to be over 45 dB for two simultaneously operated channels.
Article
Full-text available
Augmenting traditional transfer moulding with Film Assisted Moulding and Dynamic Insert Technology can deliver a range of benefits to PIC makers. As well as providing necessary packaging attributes, the approaches allow additional functionality to be inserted such as lens structures or through polymer vias. Marco Koelink of the Advanced Packaging Center in The Netherlands provides an overview of the technology, including recent developments in die-attach, and shares device examples from solar, automotive and other key sectors.
Article
Full-text available
An indium phosphide-based monolithically integrated wavelength router is demonstrated in this Letter. The wavelength router has four input ports and four output ports, which integrate four wavelength converters and a 4 × 4 arrayed-waveguide grating router. Each wavelength converter is achieved based on cross-gain modulation and cross-phase modulation effects in a semiconductor optical amplifier. Error-free wavelength switching for a non-return-to-zero 2³¹–1 ps eudorandom binary sequence at 40 Gb/s data rate is performed. Both 1 × 4 and 3 × 1 all-optical routing functions of this chip are demonstrated for the first time with power penalties as low as 3.2 dB.
Article
Nowadays, applications of surface plasmon (SP) were highlighted for facilitating the all integrated optical circuit in nano space. We introduce the design and fabrication of a periodic array of gold nanostructure for detection of light which is propagated in a SiON waveguide. The gold nanostructures are designed using Finite Element Method (FEM) and fabricated by electron beam lithography and lift-off processes. The array is composed of 5 nano rods. The nanorod has 50 nm height, 100 nm width and 15 um length. The enhancement of light at nano array was detected. Below the specific distance between nano array and waveguide, the nano array can detect the evanescent tail of light. The results demonstrate nanorods array can verify the fact that the incident light propagates in a waveguide or not when optical components are densely integrated.