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Well-organized nano- to micron-sized GaN materials have been successfully grown on Si (100) substrates from a single molecular complex precursor, under a flow of ammonia gas, by altering the reaction parameters. Four important parameters [reaction temperature, pressure, mode of heating, and type of sample holder] have been altered one by one in ord...
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... major impact on GaN growth was studied at the 800 and 1000 • C, Samples A and B, respectively. Fig. 1 shows field emission scanning electron microscopy (FE- SEM) images of Sample A prepared at 800 • C under a constant ammonia flow of 200 sccm for 3 hrs. Based on these images, Sample A is composed of high-densities single-crystalline GaN nanoparticles that are randomly distributed over the whole area for the sample. The aver- ages sizes ...
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