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The work in this paper, presents the analysis of electrical transport in graphene nanoribbon (GNR) interconnect as next generation on-chip interconnect. Graphene has the potential of performing as an interconnect material that could replace the existing copper interconnects in future silicon based micro chip. In this work, we have investigated how...
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We calculate the dielectric function and plasmonic response of armchair (aGNRs) and zigzag (zGNRs) graphene nanoribbons using the self-consistent-field approach within the Markovian master equation formalism (SCF-MMEF). We accurately account for electron scattering with phonons, ionized impurities, and line-edge roughness and show that electron sca...
Strain engineering shows distinct advantages in thermal management by tuning thermal resistance in a wide range. Till now, most of the relative studies were concentrated in uniform deformation, wherein the effects of the localized strain field are rarely exploited. Herein, by using non-equilibrium molecular dynamics simulations, we explore the loca...
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In this work, the fabrication, structural and electrical properties of reduced graphene oxide (rGO) doped nanocrystalline vanadium pentoxide V2O5 films were studied. rGO was synthesized using modified Hummer method and confirmed by HRTEM imaging. XRD analysis revealed the structure of the prepared films as nanocrystals in highly oriented form toward c-axis normal to the surface of the substrate of the film. The XRD analysis also revealed that the (0 0 2) line is noticeable in the pure film but weakened by the addition of rGO, which indicates a layer of intercalation between the vanadium layers. The average particle size decreased with increasing rGO content from 4.86 nm to 3.17 nm. The activation energy was calculated and found to be increasing from 0.157 eV to 0.181 eV as rGO increases from 0 to 0.35 mol%. The vanadium ions concentration N were calculated and found to be increasing from 1.11 × 10²² cm⁻³ to 1.38 × 10²² cm⁻³, while the spacing of vanadium ions R decreased from 0.448 nm to 0.417 nm. The hopping carrier mobility (μ) and carrier density (Ne) of the prepared samples were also calculated at fixed temperature. Greaves model for variable range hopping was studied for the prepared samples.
