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Latch up phenomenon of Bulk CMOS [2] 

Latch up phenomenon of Bulk CMOS [2] 

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The Complementary metal-oxide-semiconductor (CMOS) device has been rapidly evolving and its size has been drastically decreasing ever since it was first fabricated in 1960 [Us Patent 3,356,858: 1967]. The substantial reduction in the CMOS device size has led to short channel effects which have resulted in the introduction of Fin Field Effect Transi...

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