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Intrinsic phonon-phonon scattering rates in silicon, temperature at 300, 600, and 1000 K, calculated within the RTA.

Intrinsic phonon-phonon scattering rates in silicon, temperature at 300, 600, and 1000 K, calculated within the RTA.

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Figure 1. Thermal conductivity as a function of nanowire length and...
Figure 2. Thermal conductivity as a function of temperature and length...
Figure 3. Electronic band structure of copper (blue line) and silicon...
Figure 4. Phonon dispersion curve of copper (blue) and silicon (green)...
+3 Figure 5. Intrinsic phonon-phonon scattering rates in silicon,...
Length dependent thermal conductivity of silicon and copper nanowire: a molecular dynamics study
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  • Aug 2023
The miniaturization and higher power density of modern electronics pose a significant challenge in thermal management. A key focus in addressing this challenge revolves around the advancement of thermal interfaces within microchip packaging, aiming to enhance thermal energy dissipation and optimization of performance. Copper nanowires are extensive...
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