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![Induced gate noise of MOSFETs with different channel length versus the gate to source voltage V GS [16].](profile/Mj-Deen/publication/254688785/figure/fig7/AS:669223391096875@1536566698754/Induced-gate-noise-of-MOSFETs-with-different-channel-length-versus-the-gate-to-source.png)
Induced gate noise of MOSFETs with different channel length versus the gate to source voltage V GS [16].
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A thorough study of high frequency MOSFET noise compact modeling with emphasis on channel thermal noise modeling is presented. Although the modeling of MOSFET noise dates back to many years ago, the enhanced noise generated in short channel MOSFETs has made researchers revisit the problem to develop better models, especially in recent years. In thi...
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In this work, we report the noise measurements in the RF frequency range for ultra thin body and thin buried oxide fully depleted silicon on insulator (UTBB FD-SOI) transistors.We analyze the impact of back and front gate biases on the various noise parameters; along with discussions on the secondary effects in FD-SOI transistors which contribute t...
Citations
... Although modeling of induced gate noise has been extensively worked in [5]- [13], most of the models are either for bulk MOSFETs [6]- [9] and HEMTs [10], [11] or iterative in nature [5]- [7]. Models derived for devices other than UTBB-SOI do not have the ability to consider the back-gate dependence, which is a key feature of FDSOI FETs. ...
We present a charge based compact model for induced gate thermal noise for Fully Depleted Silicon on Insulator (FDSOI) Transistor. The model uses front and back gate charges as well as the respective mobilities for the development of analytical expression. The model is implemented in Verilog-A and validated with experimentally calibrated TCAD simulations. The model predicts the high-frequency behavior with good accuracy while capturing the back bias dependence.
To fully deploy power of quantum computing (QC), practical quantum computers require the integration of a large number of qubits, e.g., in the thousands and millions, to overcome the fragility of the quantum states. Those qubits reside in extremely low temperatures (e.g., tens of mK) and demand a high degree of integration, low noise, and low power consumption for the control and read-out electronics. Following decades of technology scaling, classic CMOS has achieved extreme miniaturization with a well-established global eco-system. QC/CMOS integration is thus poised to be one the best solutions for the scalability problem for quantum computing.
Although intended for applications operating well above 200K, standard CMOS technologies have been experimentally verified to perform well at cryogenic temperatures (cryo-CMOS). However, many challenges remain to enable deployment of cryo-CMOS and integration of QC/CMOS. In this chapter, we explain and address a few of such challenges, focusing on the background and progress of the device physics research. The background and progress of QC, with particular emphasis on silicon spin quantum dot (QD) and its need for QC/CMOS integration, is first introduced. Two critical aspects of the cryo-CMOS behaviors, namely transport and high-frequency noise, are then highlighted. Finally, the chapter is concluded with a brief overview on the needs and challenges of cryogenic numerical simulation tool.
Self-heating in nanoscale gate-all-around (GAA) MOSFETs can be attributed to the low thermal conductivity of channel material, gate dielectric material, and large thermal resistance of the source and drain contacts. Self-heating can severely increase the thermal noise level in nanoscale gate-all-around (GAA) MOSFETs as the peak lattice temperature increases several degrees above the ambient temperature. This work presents a detailed analysis of thermal noise in InGaAs based nanowire (NW)/nanosheet (NS) GAA metal-oxide-semiconductor field-effect transistors (MOSFETs). Calibrated electro-thermal simulation results are used to analyze the influence of interfacial thermal resistance (ITR), the number of nanowires/nanosheets (N) and mole fraction of Gallium on drain noise power spectral density (SID), induced gate noise power spectral density (SIG), and cross-correlation noise power spectral density (SIC). The impact of engineered source/drain contacts and thermal conductivity of buried oxide (BOX) materials on SID, SIG, and SIC parameters is also investigated in this work. It is observed that Si3N4 outperforms SiO2 as a BOX material. The noise power spectral densities such as SID, SIG, and SIC decrease by 8%, 27%, and 22%, respectively, in NW GAA MOSFETs and 16%, 26%, and 18%, respectively, in NS GAA MOSFETs, when Si3N4 replaces SiO2 as a BOX layer.
A wideband low-noise amplifier (LNA) featuring transformer-based wideband input matching is proposed for millimeter-wave applications. By analyzing the properties of conventional series input matching networks, which were widely employed in narrowband LNAs and shunt-series matching networks for bandwidth extension, a novel input matching network possessing the merits of both was proposed. For further bandwidth extension, another peak of input impedance at a higher frequency is introduced for the proposed input matching network. Moreover, it is proved that the proposed input matching network can suppress the gate resistor noise, resulting in significant noise figure (NF) improvement of an LNA. On the other hand, the NF is further reduced by connecting a transformer between the two amplification stages, which helps suppress the noise contribution from the second stage, leading to an LNA design with NF lower than 4.5 dB over a very wide operating bandwidth. To enhance the gain bandwidth, the peak distribution, including both shunt peaking and series peaking, is discussed. By appropriately distributing these peaks, which is also known as the pole-tuning technique, a wider gain bandwidth can be obtained. To validate the proposed techniques, an LNA with two common-source (CS) stages is designed and fabricated using a 65-nm CMOS process, and the overall chip size, including all pads, is only 0.26 mm
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. The two CS stages are cascoded for dc biasing to reduce the power consumption. Experimental results show that a peak gain of 13.5 dB is achieved within a -3-dB bandwidth from 19.2 to 42.6 GHz. The measured NF is 3.1-4.5 dB, and the input 1-dB gain compression point (IP
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) ranges from -13.54 to -9.89 dBm in the entire gain bandwidth. The input return loss S
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is less than -10 dB over a frequency range of 16.8-38.9 GHz. Moreover, benefiting from the current-reuse technique, the power consumption of the LNA is only 6.36 mW.
In this thesis, we develop compact models for the essential physical phenomenons present in advanced technology nodes in FinFET, UTBB-FDSOI and negative capacitance FDSOI FET. These models will be incorporated in industry-standard models for real world circuit design applications.
The thesis is organized in seven chapters. Chapter 1 starts with the historical background of semiconductors and Integrated Circuits (IC), followed by scaling of transistor. Then, the significance of compact models of FET in circuit design is highlighted. Compact model developed for novel physical phenomenon present at advance technology nodes are presented in 3 parts as follows:
Part - I
Gate Induced Drain Leakage (GIDL) Modeling: GIDL in sub-20 nm scaled FinFET is caused by Trap-Assisted-Tunneling (TAT) at low gate-drain overlap electric field and Band-To-Band-Tunneling (BTBT) at high gate-drain overlap field. The physics of TAT phenomenon is studied in detail and a compact model is developed for the same. The BTBT phenomenon is also discussed in relation to the TAT. Behaviour of TAT and BTBT at different temperatures is also studied.
Chapter 2 starts with the review of key features and limitations of current industry standard BTBT based GIDL model and then highlights the inability of the present BTBT based GIDL model to predict the experimental GIDL trends at low field. This inability of the GIDL model inspired us to develop a compact model for TAT based GIDL. The limitations of the proposed model and ways to overcome these limitations are also described in the chapter.
Chapter 3 overcomes the limitations of GIDL model presented in Chapter 2, by including
the back bias effect. The generic physics-based GIDL model is developed, without using
any empirical back bias dependent function, unlike the present GIDL model in literature. The developed model is validated against the experimental data of state-of-the-art FinFET devices fabricated by Intel.
Part - II
Induced Gate Noise Modeling and RF Performance: FDSOI devices are being used for RF
applications. Hence, noise behaviour at high frequency needs to be known accurately. Therefore, compact model for noise behaviour in FDSOI devices are developed in this part.
Chapter 4 deals with the induced gate thermal noise with back gate biasing, that is caused at high frequency by capacitive coupling of channel charge fluctuations with gate terminal. Compact model for induced gate noise is developed and then validated with calibrated TCAD simulations.
Chapter 5 describes the impact of backplane doping on the RF performance of FDSOI FET. Impact of backplane doping on device is evaluated by RF characterization. The characterization results match with the industry-standard BSIM-IMG model. It is found that the higher backplane doping results in lower fT of the device.
Part - III
Negative Capacitance-FDSOI (NC-FDSOI) FET Compact Model: The NC-FET concept
has drawn much attention for low power applications, because negative capacitance effect reduces the SS below 60 mV/decade. The NC-FDSOI FET model presented in this thesis is the first negative capacitance FDSOI FET model that captures the current-voltage and capacitance voltage characteristics.
Chapter 6 presents the compact model for negative capacitance FDSOI (NC-FDSOI) FET having metal–ferroelectric–insulator–semiconductor (MFIS) gate-stack. The model is developed based on the framework of industry-standard BSIM-IMG model. The NC-FDSOI model is computationally efficient as well as is able to accurately capture the drain current and its derivatives. The model is validated with numerical solutions and the measured data.
In order to recapitulate, this thesis presents the compact models for FDSOI and FinFET. The compact models developed in this thesis will be incorporated in the industry standard compact models for real world applications. Hence, this work has greatly contributed to compact modeling and the semiconductor device community by providing physics-based compact models to simulate the circuit for nanoscale devices accurately and efficiently.
A simple analytical model of MOSFETs channel noise is presented by considering short-channel effect of deep submicron MOSFETs, such as mobility degradation, channel length modulation. The model is explicit functions of MOSFETs geometry and biasing conditions, and hence is useful for circuit design purposes. Simulating results derived by using different channel noise model are compared and discussed.
Simple analytical expressions for MOSFETs noise parameters are developed and experimentally verified. The expressions are based on analytical modeling of MOSFETs channel noise, are explicit functions of MOSFETs geometry and biasing conditions, and hence are useful for circuit design purposes. Good agreement between calculated and measured data is demonstrated. Moreover, it is shown that including induced gate noise in the modeling of MOSFETs noise parameters causes ∼5% improvement in the accuracy of the simple expressions presented here, but at the expense of complicating the expressions.
