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The growth and fabrication of 405 nm InGaN laser diodes by molecular beam epitaxy (MBE) has made rapid progress over the last three years. In 2004, the authors reported the first MBE-grown nitride laser diodes. In mid-2005 the authors then demonstrated room-temperature continuous-wave (cw) operation. This was achieved by significantly reducing the...
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... buffer or nucleation layer. The group III elements as well as the n-type dopant were evaporated from gallium, aluminum, indium and silicon solid source effusion cells. Organometallic bis(cyclopentadienyl)magnesium (Cp 2 Mg) was used as the source of magnesium atoms for p-type doping. The most recent structure of the laser diodes is shown in Fig. 1 and consists of a separate confinement heterostructure with a multiple quantum well active region. A 260 nm layer of silicon-doped GaN was first grown to bury any residual contamination present on the substrate surface. This was followed by a 1250 nm silicon-doped Al 0.12 Ga 0.88 N/GaN short period superlattice cladding layer with 2.6 ...
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... regions of the LD structure. Growth optimization of both the p-AlGaN cladding layer and p-doped GaN cap layer were carried out. For the AlGaN cladding layer, variations in growth temperature, Cp 2 Mg-flux and NH 3 -flux were studied, and their effect on optical output power and I-V characteristics measured. The optimized structure is shown in Fig. 1. The LD het- erostructure design remained unchanged, but a GaN:Mg cap layer thinned to 10 nm as well as increased Mg- concentration in the AlGaN p-cladding were found to improve the I-V characteristics. We believe that these changes result in reduced contact resistance and increased hole concentration in the p-cladding layer, but ...
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... the first MBE-grown cw LDs [8], with a threshold voltage of 8.3 V. The circles show a typical I-V curve of a MBE-grown cw LD with the p-growth improvements. As shown in the figure, an improvement in voltage of ~1.3 V at 5.7 kA/cm 2 has been obtained. The improved LD structure uses a bulk 5% AlGaN p-cladding layer, and a 10 nm p-type GaN cap layer (Fig. 1). This compares to a p-AlGaN/GaN superlattice cladding layer with 20 nm cap layer for our previ- ous LD structure [8]. We believe that further improvements to the V-I characteristics are possible, e.g. by optimizing doping in the AlGaN blocking layer and the p-doped waveguide. LD operation was tested under cw current injection at a heat ...
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