Figure 6 - uploaded by Wei-Sheng Chen
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Illustrations of (a) the device architecture, (b) energy-level diagram, and (c) cross-sectional SEM image of the QLED.
Source publication
Nickel oxide (NiO x) has been extensively investigated as the hole injection layer (HIL) for many optoelectronic devices because of its excellent hole mobility, high environmental stability, and low-cost fabrication. In this research, a NiO x thin film and nanoporous layers (NPLs) have been utilized as the HIL for the fabrication of quantum dot lig...
Contexts in source publication
Context 1
... photoelectron spectroscopy (XPS) measurements were carried out for identification of the Ni 3+ /Ni 2+ ratio. Figure 5a, 30 The graphical illustration of the QLED based on the NiO x NPL is shown in Figure 6a, which is constructed with the configuration of ITO/NiO x NPL/PVK/CdSe QDs/ZnO NPs/ PEIE/LiF/Al. A QLED based on a 40 nm thick NiO x thin film was also fabricated and evaluated for comparison. ...
Context 2
... QLED based on a 40 nm thick NiO x thin film was also fabricated and evaluated for comparison. The energylevel diagram of the whole device is illustrated in Figure 6b. In our devices, we chose NiO x as the hole injection material since its VB is close to the work function of ITO. ...
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Citations
... In addition, due to the nature of organic materials, the PEDOT:PSS has lower thermal stability than those composed of inorganic materials. Transition metal oxides such as molybdenum oxide (MoO3) [22][23][24], nickel oxide (NiO) [25][26][27], tungsten oxide (WO3) [28][29][30], vanadium oxide (V2O5) [31][32][33] have successfully been employed in QLEDs as promising alternatives to replace the organic PEDOT:PSS HIL due to compatibility with high work function, good stability, and good carrier mobility. In particular, highly n-doped MoO3 has gardened significant attention as a promising material for HIL in QLEDs because it has a deep lying electronic state, efficient hole injection into organic material, and a wide bandgap [34][35][36][37][38]. Furthermore, the solution-processed MoO3 nanoparticles (NPs) exhibits good stability and compatibility with QD synthesis and device fabrication processes. ...
This paper presents a study aimed at enhancing the performance of quantum dot light-emitting didoes (QLEDs) by employing a solution-processed molybdenum oxide (MoO3) nanoparticle (NP) as a hole injection layer (HIL). The study investigates the impact of varying the concentrations of the MoO3 NP layer on device characteristics and explores the underlying mechanisms responsible for the observed enhancements. Experimental techniques such as an X-ray diffraction and field-emission transmission electron microscopy were employed to confirm the formation of MoO3 NPs during the synthesis process. Ultraviolet photoelectron spectroscopy is employed to analyze the electron structure of the QLEDs. The QLED with an 8 mg/mL concentration of MoO3 nanoparticles achieves remarkable improvements in device performance, with a maximum luminance of 69,240.7 cd/cm2, maximum current efficiency of 56.0 cd/A, and maximum external quantum efficiency (EQE) of 13.2%. The obtained results signify a notable progress in comparison to QLED without HIL and those utilizing the widely used poly(3,4-ethylenedioxythiophene):poly(styrene sulfonate) (PEDOT:PSS) HIL. They exhibit a remarkable enhancement of 59.5% and 26.4% in maximum current efficiency, respectively, as well as a significant improvement of 42.7% and 20.0% in maximum EQE, respectively. This study opens up new possibilities for the selection of HIL and the fabrication of solution-processed QLEDs, contributing to the potential commercialization of these devices in the future.
