Fig 2 - uploaded by Yongdong Wu
Content may be subject to copyright.
IGBT diagram. If V GE ≥ 15V (i.e., gate-ON), the circuit between collector and emitter will be on (i.e., circuit-ON), V CE ≈ 0 and I C (≈ I E ) is large. But if V GE ≤ 0V (i.e., gate-OFF), the circuit will be off (i.e., circuit-OFF), I C ≈ 0 and I E ≈ 0. 

IGBT diagram. If V GE ≥ 15V (i.e., gate-ON), the circuit between collector and emitter will be on (i.e., circuit-ON), V CE ≈ 0 and I C (≈ I E ) is large. But if V GE ≤ 0V (i.e., gate-OFF), the circuit will be off (i.e., circuit-OFF), I C ≈ 0 and I E ≈ 0. 

Context in source publication

Context 1
... shown in Fig.2, an IGBT is a terminal semiconduc- tor device for conducting current I c in one direction [26]. ...

Similar publications

Article
Full-text available
Experimental results shows that all electrical parameters of solar cell such as maximum output power, open circuit voltage, short circuit current, and fill factor beside efficiency have been changed with temperature. According to results, the most significant is the temperature dependence of the voltage which decreases with increasing temperature w...
Article
Full-text available
A saturated injector driver is a power transistor driver circuit that turns fully on, and electrically saturates for the entire duration of the injector pulse width. This type of driver is better used with injectors having high resistance coils (12~16 Ohm). The advantage of this type of injector driver is that electrically generated heat is dissipa...