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![Fig. 4. Geometry of a substrate integrated waveguide [76].](profile/Olebogeng-Kobe/publication/311158046/figure/fig3/AS:434352644464640@1480569148014/Geometry-of-a-substrate-integrated-waveguide-76_Q320.jpg)
This paper reviews microwave on-chip resonators with emphasis on quality-factor (Q-factor), and techniques enhancing Q-factor. The review discusses both planar microstrip and waveguide structures, with the integration of the latter emerging as a substitute for the bulky and expensive non-planar waveguides. Despite their huge Q-factor the convention...
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... integration on a single substrate. This tech- nique allows for a waveguide size reduction with a factor of e 1/2 [75] to the conventional rectangular waveguide. Although they possess high-Q and low-loss over on-chip spirals, SIW structures are still large to integrate in front-end devices, hence more research on size reduction is still necessary. Fig. 4 illustrates a physical geometry of these structures with the metal vias repre- senting the slots connecting the two metal plates on either side of the ...
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Citations
... On the other hand, this also increases the complexity and power consumption of the circuit and may introduce additional noise and mismatch [6]. In recent years, there has been a growing academic interest in an SIW structure that employs air or other low-loss dielectrics [7,8]. A hybrid SIW and periodically drilled SIW structure was proposed in Ref. [9], in which periodic air holes were added to synthesize a lower effective permittivity, thus achieving a Q-factor of 815. ...
Substrate integrated waveguides (SIWs) components play a crucial role in microwave devices fabricated by printed circuit board (PCB) technology. Bound states in the continuum (BICs) have high-quality factors that approach infinity. So far, there is little research on BICs in SIWs. Therefore, we studied a symmetry-protected BIC generated by the coupling between SIW and SIW resonators to fill this gap. Using the revised coupled mode theory (CMT), we explored the mechanism of resonance generation in this system. In addition, the effect of the geometrical parameters on the resonance is also investigated and higher Q 3dB factors are obtained. The findings offer new insights into the design of BIC devices by traditional PCB technology, thus contributing to future applications in the integrated circuits field.
... Radiation in huge gaps causes considerable power loss. A novel method for calculating the attenuation constant owing to radiation loss has recently been established [17], [18]. The resultant formula is (3), ...
This paper presents a study of various types of losses in substrate-integrated waveguides (SIW) using a genetic algorithm. Three main types of losses are considered and examined separately: conductor loss, dielectric loss, and radiation loss. Furthermore, the current analysis allows for a physical understanding of the loss impacts as well as the creation of design guidelines to reduce losses at 10 GHz frequency while keeping the miniaturized size of the SIW. Validation results obtained using the software Ansys HFSS, verify that the attenuation constant of the SIW can be significantly reduced to 0.4 dB/m, the Insertion loss S21 to -0.2 dB and the return loss to -38 dB if the geometric parameters are chosen properly. This study enables us to identify the source of losses in a SIW and, as a result, eliminate any type of dispersion. That demonstrates the usability of SIW technologies in the design of microwave circuits used in Internet of things applications.
... An increase in energy loss results in a low Q-factor, necessitating the use of a Q-enhancement process. Q-factor of SIW resonator is described by (4) as presented in [21]. ...
... In addition, radiation losses, usually very minimal are due to the gaps in the SIW structure along the walls. Since these are very minimal, they could be ignored in the calculation of the total Q-factor given by (5) as in [21]. The total unloaded Q-factor is defined as (5) ...
p>The main objective purpose of this paper is to study the enhancement techniques of the unloaded quality factor of substrate integrated waveguide (SIW) resonator, given that the quality of filters depends first on the quality of the resonators that compose it. Performance enhancement is achieved by employing a MATLAB-based genetic algorithm to optimize the geometrical parameters of the SIW resonator by iterative convergence to the target frequency (10 GHz frequency). On the other hand, the Ansys HFSS tool is used to model and optimize the SIW resonator with the suitable transition and plot the S-parameters for a frequency sweep range to validate its property. The results obtained allow increasing the unloaded Q-factor to be more than 1609 and reducing not only insertion and return losses but also reducing the size of the resonator. The proposed SIW resonator with its small size and low loss is directly useful for microwave and millimeter-wave applications.</p
... Moreover, it would allow extension of the limited coherence time of the superconducting qubits, and implementation of complex quantum algorithms [11] and hardware-efficient quantum error correction [12][13][14][15]. Compared with traditional superconducting qubits, high-quality-factor resonators have a superior potential for quantum state storage due to their impressive lifetime [14,[16][17][18], efficient thermalization, no extra fridge control lines, and ability to couple multiple qubits [8,19]. ...
We experimentally demonstrate a microwave quantum storage for two spectral modes of microwave radiation in an on-chip system of eight coplanar superconducting resonators. Single-mode storage shows a power efficiency of up to 60±3% at single photon energy and more than 73±3% at higher intensity. The noiseless character of the storage is confirmed by coherent-state quantum process tomography. The demonstrated efficiency is an order of magnitude higher than the previously reported data for multimode microwave quantum memory. The proposed on-chip quantum memory architecture can be easily integrated into the state-of-the-art superconducting quantum circuit technology without any coherence compromises. The obtained results are in good agreement with the proposed theory, which pave the way for building a practical multimode microwave memory for superconducting quantum circuits.
... As such, they cover a plethora of functions from acting as amplifiers, filters, regulators to converters, and oscillators, etc. Embedded inductors require a lot of research and development on the performance front before they can be properly incorporated into packaging systems. The major hindrances in the development of embedded inductors include their low-quality factor (Q-factor), high losses, and limitations of proper miniature fabrication techniques [67,68]. ...
The advent of nanotechnology has initiated a profound revolution in almost all spheres of technology. The electronics industry is concerned with the ongoing miniaturization of devices and as such requires packaging technologies that will make the devices more compact and resilient. 3D packaging, system in package, and system on chip are the various packaging techniques that utilize nanoscale components for their implementation. The active components of the ICs have kept pace with Moore’s law, but the passive components have proven an impediment in the race for miniaturization. Moreover, the toxic effects and nano-scale problems associated with conventional soldering techniques have entailed the active involvement of nanotechnology in the search for answers. Recent advances in these fields and the diverse nanomaterials which are being employed to resolve these issues have been discussed in detail.
... All of these are embedded in silicon oxide (SiO2), as shown in Fig. 1. By employing the SIW technology, cavity resonators [22] and cavity-backed antennas [23] can also be implemented on the chip, with the bottommost metal layer (M1) and the topmost metal layer (TM1) being the grounds. The cavity thickness is well below half wavelength and only supports TEm0l mode. ...
This article presents a one-port de-embedding method for extracting dielectric constant of SiO
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in standard complementary metal-oxide-semiconductor (CMOS) at terahertz frequencies. Instead of extracting dielectric constant using absolute parameters from one cavity resonator, the presented method extracts key information from relative differences of three designated cavity resonators. By doing so, this method gains a unique de-embedding technique that can remove the effect of the feeding network and other repeatable errors, which simplifies the calibration and increases measurement accuracy. Furthermore, compared with conventional resonant methods requiring widely swept data or complex data processing, the proposed method only requires
f<sub>L</sub>
and
Q<sub>L</sub>
, which can be directly measured even from a narrow frequency band. Therefore, it reduces the measurement requirement and lowers the detuned error. For validation, both simulations and experiments are carried out at 140, 300, and 450 GHz. The testing samples are fabricated using commercial 0.18-
μ
m and 65-nm CMOS processes and measured by a terahertz on-wafer measurement setup. Results show full on-chip compatibility, greater simplicity, and good de-embedding effects, making this method suitable for on-chip dielectric characterizations.
... [2] Another essential advantage of our gate scheme is that it can be combined with frequency multiplexing technology. Microwave control pulses combined with onchip filters [34,35] can be a feasible solution to reduce the number of control lines, as we can deliver the microwave of different frequencies through a common signal input to corresponding couplers through on-chip filters. Considering all these advantages above, our all-microwave CZ gate scheme can have broad application prospects in large-scale quantum hardware design in the future. ...
The development of high-fidelity two-qubit quantum gates is essential for digital quantum computing. Here, we propose and realize an all-microwave parametric Controlled-Z (CZ) gates by coupling strength modulation in a superconducting Transmon qubit system with tunable couplers. After optimizing the design of the tunable coupler together with the control pulse numerically, we experimentally realized a 100 ns CZ gate with high fidelity of 99.38%$ \pm$0.34% and the control error being 0.1%. We note that our CZ gates are not affected by pulse distortion and do not need pulse correction, {providing a solution for the real-time pulse generation in a dynamic quantum feedback circuit}. With the expectation of utilizing our all-microwave control scheme to reduce the number of control lines through frequency multiplexing in the future, our scheme draws a blueprint for the high-integrable quantum hardware design.
... [2] Another essential advantage of our gate scheme is that it can be combined with frequency multiplexing technology. Microwave control pulses combined with onchip filters [34,35] can be a feasible solution to reduce the number of control lines, as we can deliver the microwave of different frequencies through a common signal input to corresponding couplers through on-chip filters. Considering all these advantages above, our all-microwave CZ gate scheme can have broad application prospects in large-scale quantum hardware design in the future. ...
The development of high-fidelity two-qubit quantum gates is essential for digital quantum computing. Here, we propose and realize an all-microwave parametric controlled-Z (CZ) gates by coupling strength modulation in a superconducting Transmon qubit system with tunable couplers. After optimizing the design of the tunable coupler together with the control pulse numerically, we experimentally realized a 100 ns CZ gate with high fidelity of 99.38% ± 0.34% and the control error being 0.1%. We note that our CZ gates are not affected by pulse distortion and do not need pulse correction, providing a solution for the real-time pulse generation in a dynamic quantum feedback circuit. With the expectation of utilizing our all-microwave control scheme to reduce the number of control lines through frequency multiplexing in the future, our scheme draws a blueprint for the high-integrable quantum hardware design.
... In this paper a detailed study on enhancing the Q-factor and related technique is studied in depth for a microwave on chip resonator. 2017 [198] v. 2020 [208] xv. The present review work summarizes the microfabrication aspects associated with MEMS and NEMS. ...
With the technological advancement in micro-electro-mechanical systems (MEMS), microfabrication processes along with digital electronics together have opened novel avenues to the development of small-scale smart sensing devices with improved sensitivity with a lower cost of fabrication and relatively small power consumption. This article aims to provide the overview of the recent work carried out on the fabrication methodologies adopted to develop silicon based resonant sensors. A detailed discussion has been carried out to understand critical steps involved in the fabrication of the silicon-based MEMS resonator. Some challenges starting from the materials selection to the final phase of obtaining a compact MEMS resonator device for its fabrication have also been explored critically.
... A 50-Ω microstrip line designed on this substrate at a frequency of 5.24 GHz corresponds to a width of W M = 0.24 mm and therefore this access line can be realized. The impedance matching between the SIW filter and the 50-Ω lines is made by intermediate transitions between them [26][27][28]. The physical dimensions of these transitions control the external quality factors of the filter. ...
This article presents new structures and methods of design of miniature third-order substrate integrated waveguide (SIW) bandpass filters on a high-permittivity ceramic substrate for the C-band. The aim was to appraise the feasibility of such filters by using a 3D electromagnetic (EM) simulator. The substrate integrated waveguide (SIW) offers good quality factors and electrical performances compared with other planar techniques. Its integration capabilities and fabrication cost are other benefits that make it attractive. Ceramic material offer electrical properties suitable in designing of passive devices. High relative permittivity with low dielectric losses makes it possible to miniaturize passive components while exhibiting high temperature stability, which is an important selection criterion for a filter designed to equip the payload of a satellite. Three SIW filters were designed on a Trans-Tech ceramic substrate (thickness = 254 mm, er = 90, and tand = 0.0009) with drastic specifications for space application. The first filter is composed of three SIW resonators with direct coupling, the second is composed of three SIW resonators with a cross-coupling to create a transmission zero, and the third is composed of three SIW resonators with circular holes etched on the top of the metal layer to achieve a super-wide band. The obtained results for the proposed filters are presented, discussed, and compared with relevant published literature. The proposed filter can be used to enhance the performance of microwave devices used for C-band, especially Satellite communications.
