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Freestanding epitaxial ferroelectric films. (aec) The epitaxial thin films of Pb(Zr 0.2 Ti 0.8 )O 3 ferroelectric films are grown on lattice-matched SrTiO 3 substrates with a La 0.7 Sr 0.3 MnO 3 sacrificial layer. Subsequently, the La 0.7 Sr 0.3 MnO 3 layer is wet etched. (def) Process schematic for heterostructure growth, oxide membrane release and transfer the freestanding perovskite single-crystal films with a Sr 3 Al 2 O 6 sacrificial layer. (geh) The released ferroelectric layers are transferred onto flexible substrate. Panel a-c reprinted with permission from ref 49. Copyright 2015, Rights Managed by Nature Publishing Group. Panel d-f reprinted with permission from ref 51. Copyright 2016, Rights Managed by Nature Publishing Group. Panel g-h reprinted with permission from ref 50. Copyright 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Freestanding epitaxial ferroelectric films. (aec) The epitaxial thin films of Pb(Zr 0.2 Ti 0.8 )O 3 ferroelectric films are grown on lattice-matched SrTiO 3 substrates with a La 0.7 Sr 0.3 MnO 3 sacrificial layer. Subsequently, the La 0.7 Sr 0.3 MnO 3 layer is wet etched. (def) Process schematic for heterostructure growth, oxide membrane release and transfer the freestanding perovskite single-crystal films with a Sr 3 Al 2 O 6 sacrificial layer. (geh) The released ferroelectric layers are transferred onto flexible substrate. Panel a-c reprinted with permission from ref 49. Copyright 2015, Rights Managed by Nature Publishing Group. Panel d-f reprinted with permission from ref 51. Copyright 2016, Rights Managed by Nature Publishing Group. Panel g-h reprinted with permission from ref 50. Copyright 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

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Many perovskite oxide ferroelectrics (e.g. PbZr1-xTixO3, BaTiO3, LiNbO3) are born with multitudinous robust performances and have been widely used in sensors, actuators, surface acoustic wave devices, and memories et al. However, their hardness, brittleness and harsh synthesis conditions (i.e. high temperature and oxygen ambience) restrain their ap...

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... 3 epitaxial film can be grown on the hard SrTiO 3 substrate, separated by etching sacrificial layer (e.g. La 0.7 S r0.3 MnO 3 , Sr 3 Al 2 O 6 ) and then transferred onto the organic substrate to prepare flexible electronics [49,50], which is named as Method 4 here. For example, Fig. 6a-c illustrates the process of complex perovskite oxide films integration on the flexible substrate. The (001) SrRuO 3 / Pb(Zr 0.2 Ti 0.8 )O 3 /SrRuO 3 sandwich capacitor was grown on the thin La 0.7 S r0.3 MnO 3 coated SrTiO 3 substrate by using pulsed laser deposition (PLD) method. The La 0.7 S ...
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... that can be etching by de-ionized water, many perovskite oxide epitaxial films can be prepared on the hard SrTiO 3 substrate and then transferred onto organic substrate too [51,52], as shown in Fig. 6d-f. The key is the epitaxial growth of water-soluble Sr 3 Al 2 O 6 on perovskite substrates before various perovskite oxide thin films are grown on Sr 3 Al 2 O 6 buffer layers. These films were immersed in de-ionized water at room temperature to separate the films from their mother substrates. To mechanically stabilize the films and to ...
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... PDMS as an elastomer support layer was coated on the film surface before the release. In a word, millimeter-size single-crystalline oxide films are achieved by etching either La 0.7 S r0.3 MnO 3 or Sr 3 Al 2 O 6 sacrificial layer, and thus these freestanding films can be further transferred onto flexible substrates to prepare flexible electronics (Fig. ...

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