Filtered HRTEM image of a large Fig. 4. Analysis of nc-Si lamellae by AFM flat Si particle. Insets: diffractograms of (nanoprofilometry data on the morphology isolated squared areas corresponding to of the nc-Si surface). [101] zone.

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Context 1

... examples of detailed synthetic procedure and characterization methods are given in [5]. We have concluded that lamellar nanocrystals (Fig.3) are possibly formed at the stage of replacement of the bromide ligands by perfluorophenyl groups on the surface of small silicon nanoparticles and are the products of aggregation of these silicon nanoparticles into flat plates. ...

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... patterns (DP) from spherical particles, the spot diffraction patterns were observed for flat Si-nanoparticles (Fig. 2a) which have the crystalline structure. The energy dispersive X-ray (EDX) analysis reveals the presence of C, Si, O and a trace amount of F (Fig. 2b). High-resolution TEM images of crystalline flat particles are shown in Fig. 3. The thickness of flat nanocrystals was evaluated by Atomic Force Microscopy (AFM) (Fig. 4): it is close to 3.3 nm in average, and areas of uniform thickness gained 30 nm on the support substrate. The 2D silicon nanocrystals as large as those presented in Fig. 3, containing ~ 10 5 Si atoms, can be doped for the p-n junctions formation ...

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... of F (Fig. 2b). High-resolution TEM images of crystalline flat particles are shown in Fig. 3. The thickness of flat nanocrystals was evaluated by Atomic Force Microscopy (AFM) (Fig. 4): it is close to 3.3 nm in average, and areas of uniform thickness gained 30 nm on the support substrate. The 2D silicon nanocrystals as large as those presented in Fig. 3, containing ~ 10 5 Si atoms, can be doped for the p-n junctions formation in contrast to quantum dots in which the number of silicon atoms is 1000 whereas one boron or phosphorus dopant atom should be per 10 4 silicon ...