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Figure S1 | Optical image of sample A. Shown are hBN/graphene/hBN heterostructure (green), etched regions exposing the SiO2/Si substrate (dark), and the metal contacts (yellow). The dashed rectangles mark the regions presented in Fig. 2 (red) and movie M2 (blue). The current is applied to the bottom constriction and drained at the top contact, and the corresponding voltages í µí±‰í µí±‰ í µí±¥í µí±¥í µí±¥í µí±¥ and í µí±‰í µí±‰ 2í µí±í µí± are measured in the scanning gate mode. The dashed line on the right shows the native edge of graphene encapsulated in hBN.

Figure S1 | Optical image of sample A. Shown are hBN/graphene/hBN heterostructure (green), etched regions exposing the SiO2/Si substrate (dark), and the metal contacts (yellow). The dashed rectangles mark the regions presented in Fig. 2 (red) and movie M2 (blue). The current is applied to the bottom constriction and drained at the top contact, and the corresponding voltages í µí±‰í µí±‰ í µí±¥í µí±¥í µí±¥í µí±¥ and í µí±‰í µí±‰ 2í µí±í µí± are measured in the scanning gate mode. The dashed line on the right shows the native edge of graphene encapsulated in hBN.

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Topology is a powerful recent concept asserting that quantum states could be globally protected against local perturbations. Dissipationless topologically protected states are thus of major fundamental interest as well as of practical importance in metrology and quantum information technology. Although topological protection can be robust theoretic...

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Topology is a powerful recent concept asserting that quantum states could be globally protected against local perturbations1,2. Dissipationless topologically protected states are thus of major fundamental interest as well as of practical importance in metrology and quantum information technology. Although topological protection can be robust theore...