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A Single Pole Double Throw (SPDT) switch design with transmission line stub resonator for application of WiMAX and LTE in 3.5 GHz band is proposed in this paper. The transmission line stub resonator is an open stub with quarter wave of the electrical length. A PIN diode was used in the resonator to reconfigure the resonator between bandstop and all...
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... allows a switching between uplink (transmit mode) and downlink (receive mode) for data transmissions. As illustrated in Figure-1, in the RF front- end system, the SPDT switch is a part of other subcomponents such as amplifier [5], [6] , low noise amplifier (LNA) [7] and antenna [8]. ...
Citations
... On the other hand, there are several switchable designs for millimeter wave MIMO such as switchable diplexer [15], switchable low noise amplifier (LNA) [16] and switchable antenna [17]. Besides, our previous works proposed the use of switchable microstrip resonator in RF switch design (SPDT and DPDT) for isolation improvement [18], [19] and multiband isolation [20], [21]. Therefore, in the application of millimeter wave MIMO transceiver [1], this paper proposes a SPDT discrete switch design using switchable SIW resonators. ...
A single pole double throw (SPDT) discrete switch design using switchable substrate integrated waveguide (SIW) resonators is proposed in this paper. It was designed for the millimeter wave multiple input multiple output (MIMO) transceiver. An example application is for 5G communication in 26 GHz band. High isolation between transmitter and receiver (in the transceiver) is needed in SPDT switch design to minimize any high radio frequency (RF) power leakage in the receiver. Therefore, the use of switchable SIW resonators can achieve higher isolation if compared to the conventional series SPDT switch, where the isolation of the proposed SPDT is depend on the bandstop response of the SIW resonators. The switchable SIW resonators can be switched between allpass and bandstop responses to allow the operation between transmit and receive modes. As a result, the simulation and measurement showed that the proposed SPDT switch produced an isolation higher than 25 dB from 24.25 to 27.5 GHz compared to the conventional design.
... Detection of the tumor is based upon measurement of S11 due to single, double, triple and quadruple antenna elements. This is accomplished by using three SPDT switches [8]. Two models of the head were used; SAM model and a model consists of four layers; skin, fat, skull, and brain [9]. ...
In this paper a technique for the early detection of brain cancer was proposed. The technique depends upon the use of an antenna and a model for the human head. The reflection coefficient (S11) was found for two cases: with and without tumor in the head model. The large increase of S11 due to the presence of the tumor provides a good indication for tumor detection. It also gives an idea about the size of the tumor. The antenna used was a reconfigurable four-element linear array of squared microstrip patches. Two arrays were designed one circularly polarized, the other linearly polarized. The antenna operates at Industrial Scientific and Medical (ISM) frequency 2.4 GHz. It was designed on FR-4 (lossy) substrate of relative permittivity 4.3 and thickness of 1.6 mm. To feed the array, a corporate feeding network was designed. The reconfigurability of the array was achieved using three single pole double throw (SPDT) switches. Two models of the human head were used; a specific anthropomorphic mannequin (SAM) model, and a 3-D head model consisting of four different head layers: skin, fat, skull and brain. The simulation calculates the reflection coefficient (S11) with and without tumor for circularly polarized (CP) and linearly polarized (LP) linear array. Calculations were taken for four sizes of the array. The best results were obtained with the four-element circularly polarized array. An increase in S11 of 1188% was obtained.Tumors as small as 5 millimeters (four-layer model) and 2.5 mm (SAM model) can be detected. Specific absorption rate (SAR) was calculated and found to be within the safe limit. A circularly polarized four-element linear antenna array was fabricated. The measured S11 and radiation pattern are in excellent agreement with simulated ones.
... It was designed using FR4 substrate and attenuated at the frequency of 1 GHz and 2 GHz. The same effort was done by [6] and [7] for the smaller size of a multiband matched band-stop filter using stepped impedance resonators. It was fabricated on Roger RT/Duroid 5880 and attenuated at the frequency of 0.99 GHz and 1.04 GHz. ...
The exponential growth of the contemporary market of the wireless communication system creates an extraordinary demand for a low price, compact-size, high-performance and a reconfigurable filter. Because of the modern expansion, much consideration has been dedicated to compact microwave reconfigurable filters. The filter is one of the most important components of modern microwave applications,[1] as it is used to reject the transmission within an unwanted frequency range. This paper investigates the methodology of designing multi-band matched band stop filters by cascading multiple resonators to create two resonant frequencies at 2.3 and 5.4 GHz. The design was simulated using Advanced Design System (ADS) simulator and fabricated using the FR4 board. This design proves that perfectly multiband matched stop filter allows the construction of multiband matched Band stop filter.[2]
... In addition, the return loss of the measured band notches decreases compared to the simulated one which is mainly due to the current limit of the PIN diode at the ON state, where the maximum supplied voltage is 1.1 Volt [40]. Moreover, the performance of the PIN diode switch BAP64-02 decreases at higher frequencies (more than 2 GHz) as investigated in [41]. Figure 15 shows the measured gain of the proposed filtering-antenna in case 1 using ideal switches. ...
This study presents a novel technique for designing an ultra-wideband (UWB) filtering-antenna
with dual sharp band notches. This design is composed of a modified monopole antenna
integrated with resonant structures. The monopole antenna is modified using microstrip transition
between the feedline and the patch. In addition, block with a triangle-shaped slot is loaded on each side
of the ordinary circular patch to produce wide bandwidth with better return loss and higher frequency
skirt selectivity. The resonant structures are constructed using two double split ring resonators (DSRR)
loaded above the ground plane of the antenna to produce dual band notches and filter out WiMAX
(3.3–3.7 GHz) and HiperLAN2 (5.4–5.7 GHz) frequencies. The band notch position is controlled by
varying the length of the DSRR. The reconfigurability feature is achieved by using two PIN diode
switches employed in the two DSRR. The measured results show that the proposed filtering-antenna
provides wide impedance bandwidth from 2.58 to 15.5 GHz with controllable dual sharp band notches
for WiMAX and HiperLAN, peak realized gain of 4.96 dB and omnidirectional radiation pattern.
... However, the return loss of the measured band notch is decreased compare to the simulated one which is mainly due to the current limit of the PIN at the ON state [23]. Moreover, the performance of the PIN diode switch BAP64-02 decreases at higher frequencies (more than 2 GHz) as studied in [24]. Therefore, to investigate and demonstrate the reconfigurability feature using active component, PIN diode BAP64-02 (from NXP) is chosen. ...
A new design of filtenna with electronically reconfigurable band notch for ultra-wideband (UWB) applications is presented. The filtenna is designed based on modified monopole antenna integrated with resonant structure. To produce wider bandwidth with better return loss and higher frequency skirt selectivity, the monopole antenna is modified using microstrip transition in the feedline and block with a triangular-shape slot on each side of the circular patch. The resonant structure is about U-shaped slot defected on the feedline to achieve band notch characteristic. The position of the created band notch is controlled by optimizing the length of the U-shaped slot. By using a PIN diode switch inserted in the U-shaped slot to achieve reconfigurability feature. The experimental results show that the proposed design exhibits a wide bandwidth ranging from 3.0 to 14.0 GHz with reconfigurable band notch at 5.5 GHz (WLAN), and omnidirectional radiation pattern. Therefore, the proposed design is a good candidate for modern UWB applications. © 2017 Institute of Advanced Engineering and Science. All rights reserved.
... The use of diversity antennas have improved the performance of wireless communication systems as reported in [15][16][17][18]. For switching elements in RF switch (including DPDT switch), researchers used either microelectro-mechanicals (MEMs) [10] or solid state elements such as PIN diode [19] and field effect transistor (FET) [13,14,20]. However, MEMs switches are not suitable for high power applications due to their limited power capabilities [21]. ...
... These techniques were implemented in integrated circuit RF switches only. On the other hand, for discrete RF switches such as [19,25], it is quite hard to get high isolation (> 30 dB) if using only discrete PIN diodes and usually multiple cascaded PIN diodes are required for high isolation performance. ...
A novel selectable multiband isolation of Double Pole Double Throw (DPDT) switch with switchable transmission line stub resonators has been proposed for applications of WiMAX and LTE in 2.3 and 3.5 GHz bands. In this paper, two DPDT switch designs are proposed; the first design is a fixed DPDT switch, and the second is a selectable DPDT switch. The second design allows selecting only one band and unselecting the other or selecting both of them. However, the first design does not allow so. The transmission line stub resonator used in this design is an open stub resonator with quarter wave of the electrical length. By using a simple mathematical model, the theory of the transmission line stub resonator was discussed where it can be cascaded and resonated at center frequencies of 2.3 and 3.5 GHz. Moreover, the cascaded transmission line stub resonators can be reconfigured between allpass and bandstop responses using discrete PIN diodes. The key advantage of the proposed DPDT with switchable transmission line stub resonators is a multiband high isolation with minimum number of PIN diodes. Therefore, the simulated and measured results showed less than 3 dB of insertion loss, greater than 10 dB of return loss and higher than 30 dB of multiband isolation in 2.3 and 3.5 GHz bands.
... In general, resonators in RF/microwave can be used in many applications such as antennas [1][2][3] filters [4][5], switches [6][7], amplifier [8], absorber [9] and others. These resonators are generally realized using microstrip technology where they can be implemented in different shape and size such as transmission line [10], radial [8], ring [3], [9], metamaterial [11] and coupled line [12]. As described in [13], the operation of RF/microwave resonators is very similar to that of the lumped-element resonators of circuit theory, whereby it can be modelled either as a series or parallel resistor, inductor and capacitor (RLC) resonant circuit. ...
In this paper, an analysis of open stub resonator is presented and its application in dual isolation band of Single Pole Double Throw (SPDT) switch is proposed. A mathematical model and the characteristic of the bandstop of the resonator were analyzed and discussed. The open stub resonator was implemented using the microstrip transmission line and able to switch between bandstop and allpass responses. Frequency bands of 2.3 and 3.5 GHz were chosen to demonstrate the dual isolation band in the switch design. The performance results of the SPDT switch showed that the isolation was greater than 30 dB, return loss was greater than 10 dB and insertion loss less than 2 dB at the center resonant frequency of 2.3 and 3.5 GHz. The potential application of the proposed dual isolation band of SPDT switch is for multi band RF front-end system such as WiMAX, LTE, WiFi and HyperLAN. Copyright © 2016 Institute of Advanced Engineering and Science. All rights reserved.
... In general, resonators in RF/microwave can be used in many applications such as antennas [1][2][3] filters [4][5], switches [6][7], amplifier [8], absorber [9] and others. These resonators are generally realized using microstrip technology where they can be implemented in different shape and size such as transmission line [10], radial [8], ring [3], [9], metamaterial [11] and coupled line [12]. As described in [13], the operation of RF/microwave resonators is very similar to that of the lumped-element resonators of circuit theory, whereby it can be modelled either as a series or parallel resistor, inductor and capacitor (RLC) resonant circuit. ...
p>In this paper, an analysis of open stub resonator is presented and its application in dual isolation band of Single Pole Double Throw (SPDT) switch is proposed. A mathematical model and the characteristic of the bandstop of the resonator were analyzed and discussed. The open stub resonator was implemented using the microstrip transmission line and able to switch between bandstop and allpass responses. Frequency bands of 2.3 and 3.5 GHz were chosen to demonstrate the dual isolation band in the switch design. The performance results of the SPDT switch showed that the isolation was greater than 30 dB, return loss was greater than 10 dB and insertion loss less than 2 dB at the center resonant frequency of 2.3 and 3.5 GHz. The potential application of the proposed dual isolation band of SPDT switch is for multi band RF front-end system such as WiMAX, LTE, WiFi and HyperLAN.</p
