2] Extended defects in GaN grown on sapphire substrate, the substrate being on the right hand side: a) Secondary electron and b) EBIC micrograph of the cross section of a GaN film.

Contexts in source publication

Context 1

... of fig. [4.12], has a strong dependence on the duration of the filling pulse. The peculiarity of bandlike levels is that the peak temperature shifts towards lower temperature with increasing pulse width t p . This is due to the fact that when the filling pulse gets longer, levels closer and closer to the conduction band are filled and can emit. Fig. [4.12]. Simulation of DLTS signal from bandlike states associated to extended defects. In the inset, the density of states used in the simulation is ...

Context 2

... the Arrhenius plot (Fig. [6.12]) it results that the activation energies of all these levels are in the range 170÷180 meV, whilst the capture cross sections significantly differ from each other. It is worth noting that the negative peaks B and C-are expectedly associated with majority carrier traps, while the positive sign of peak A does not mean that this peak is ...