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Nitrogen and sulfur-doped diamond-like carbon (DLC) films were deposited on Si (400) substrates by electrolysis of organic liquid under high voltage, at atmospheric pressure and at temperature below 350 K. Fourier transform infrared spectroscopy (FTIR) measurements showed different vibrational modes of tetrahedrally bonded carbon. In addition, appe...
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... the IR spectrum of a:N-DLC [ Fig. 1(b)] and a:S-DLC (Fig. 2) films deposited on Si substrates, apart from the different C-H vibrational bands which should occur in DLC films, few new bands appear due to nitrogen and sulfur incorporation. In Fig. 1(b) absorption at 3200-3500 cm À1 suggests the existence of NH x (x=1, 2) bonds. The strong absorption at 1624 cm À1 can be attributed to the presence ...
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... sulfur incorporation. In Fig. 1(b) absorption at 3200-3500 cm À1 suggests the existence of NH x (x=1, 2) bonds. The strong absorption at 1624 cm À1 can be attributed to the presence of C=N bonds [18]. The absorption bands around 1100-1300 cm À1 can be assigned with C-N stretching vibration. There is no evidence for the existence of CuN bonds. In Fig. 2 the peaks at 1283 and 1149 cm À1 are assigned with C=S bond vibration [19]. The band at 1065 cm À1 is due to C-SO-C bond vibration. The absorption bands at 727 and 525 cm À1 can be attributed to the presence of C-S bonds. The peaks at 525 and 479 cm À1 are due to S-S vibrational mode. In both cases [ Figs. 1(b) and 2], the peaks at ...
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... for the existence of CuN bonds. In Fig. 2 the peaks at 1283 and 1149 cm À1 are assigned with C=S bond vibration [19]. The band at 1065 cm À1 is due to C-SO-C bond vibration. The absorption bands at 727 and 525 cm À1 can be attributed to the presence of C-S bonds. The peaks at 525 and 479 cm À1 are due to S-S vibrational mode. In both cases [ Figs. 1(b) and 2], the peaks at 1598 and 1353 cm À1 can be assigned as G and D peaks of amorphous carbon, which are normally IR forbidden but appear here due to symmetry breaking by N and S incorporation. Thus, FTIR results confirmed the incorporation of N and S into the DLC ...
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Corrosion behavior of diamond-like carbon (DLC) films was evaluated via potentiodynamic polarization in a 3.5 wt. % NaCl solution with pH 2 at room temperature. The polarization results elucidated that the corrosion resistance of the films was enhanced with the variation of the chemical compositions and film thicknesses. The use of the spectromicro...
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... The absorption bands at 2106 and 1650-1850 cm −1 correspond to the stretching vibration of -C=N and C=O functional species. The absorption peak at 1580 cm −1 is assigned to the stretching vibration of sp 2 carbon bonding (C=C) in the porous carbon matrix of the H-PCM [43]. The stretching vibration bands of C-N/C-S are located in a range of 1330-1420 cm −1 . ...
Heteroatom-doped porous carbon material (H-PCM) was synthesized using Anacardium occidentale (cashew) nut’s skin by a simple pyrolysis route. The resulting H-PCM was thoroughly characterized by various analytical techniques such as field emission scanning electron microscopy (FE-SEM) with energy-dispersive X-ray (EDX) spectroscopy, high-resolution transmittance electron microscopy (HRTEM), X-ray diffraction (XRD), Raman spectroscopy, nitrogen adsorption–desorption isotherms, X-ray photoelectron spectroscopy (XPS), and attenuated total reflectance Fourier transform infrared (ATR-FTIR) spectroscopy. The obtained results strongly demonstrated that the synthesized H-PCM exhibited a porous nature, continuous sponge-like and sheet-like smooth morphology, and a moderate degree of graphitization/crystallinity with oxygen-, nitrogen-, and sulfur-containing functionalities in the carbon matrix. After the structural confirmation, as-prepared H-PCM has used a sustainable electrocatalyst for hydrogen evolution reaction (HER) because the metal-free carbonaceous catalysts are one of the most promising candidates. The H-PCM showed excellent HER activities with a lowest Tafel slope of 75 mV dec−1 and durable stability in 0.5 M H2SO4 aqueous solution. Moreover, this work provides a versatile and effective strategy for designing excellent metal-free electrocatalysts from the cheapest biowaste/biomass for large-scale production of hydrogen gas through electrochemical water splitting.
... These materials are used in energy storage systems, lubricants, and hydrophobic coatings [4][5][6]. In general, carbon materials are dopped with nitrogen [7][8][9], fluorine [10][11][12], phosphorous [13][14][15] and sulphur [16,17] between the concentration of 0 to 30 wt.% to enhance their properties which can have applications mentioned above. From the mentioned elements, fluorine has been given special attention for its chemical difference as it has high hydrophobicity, the highest electronegativity (redox potential for F 2 /Fis +2.87V) and high reactivity (due to low dissociation energy of 36 kcal/mole), among other elements in the periodic table. ...
Fluorinated carbon materials have a wide range of applications due to their versatile properties. Functionalisation of carbon materials with fluorine enhances their properties and open their applications to new fields. Fluorinated graphene, in particular, has highly attracted researchers due to its 2-D structure, high hydrophobicity, wide bandgap and C-F bonding (ionic, semi-ionic/semi-covalent and covalent). This review gives a brief overview of the fluorination of various carbon materials such as graphite, carbon nanotubes, fullerene, and DLC and followed by an in-depth review of fluorination of 2-D graphene material. We discuss the synthetic methods of fluorinated graphene, which are mainly distinguished into exfoliation and direct fluorination. The relation between the type of bonds, F/C ratio and specific properties such as bandgap, optical properties, magnetic properties, electric and thermal conductivity and tribological properties are discussed. With a precise tuning of the F/C ratio and limiting the type of C-F bond, the fluorinated graphene can be used in battery storage devices, as a lubricant additive, as a gas sensing material and in other applications like quantum dots, supercapacitors and bioapplications.
... Compared to P, S which is to the immediate right of P in the third period of the Periodic Table, shows increased VEC and also more readily available d-orbitals resulting from the higher electronegativity of S atoms. Besides that S-based compounds are known for their low-friction characteristics, it should also be mentioned that S is attractive as a dopant in C systems in order to tune electrical properties such as electron field emission [14] and even superconductivity [15,16]. Recently, S-doped, as well as S/N co-doped graphene-like carbon sheets [17] and S-doped and S/P co-doped porous C-based material for supercapacitor and catalytic applications [18] have been suggested. ...
We deposit CSx thin solid films by reactive direct current magnetron sputtering of a C target in an argon plasma, using carbon disulfide (CS2) as a precursor to film growth. We investigate the influence of the partial pressure of the CS2 vapor introduced into the plasma on the composition, the chemical bonding structure, the structural, and the mechanical properties as determined by x-ray photoelectron spectroscopy (XPS), Raman spectroscopy, scanning electron microscopy (SEM), and nanoindentation for films deposited at 150 and 300 °C. The Raman and the XPS results indicate that S atoms are incorporated in mostly sp² bonded C network. These results agree with previous ab-initio theoretical findings obtained by modeling of the CSx compound by the Synthetic Growth Concept. The microstructure of the films as well as the results of their Raman characterization and the nanomechanical testing results all point out that with the increasing S content some sp³ bonding is admixed in the predominantly sp² bonded CSx network, leading to typical amorphous structure with short and interlocked graphene-like planes for S contents between 2% and 8%. We conclude that CSx thin solid films deposited by using CS2 as a precursor would be CSx films deposited at low temperature of ~150 °C and with an S content in the region of 6 at.% may be interesting candidates for applications as hard/elastic protective coatings.
... Considering Fig. 9, three peaks including C-N, C≡N, and N-H mods appeared at 1740 cm −1 , 2330 cm −1 , and 3360 cm −1 , respectively. Our analysis of FTIR data matches with the results reported by others [44,45]. The research conducted by Kaufman et al. [44] shows two lines active in the sp 2 area at around 1550 and 1375 cm −1 . ...
... By increasing N 2 incorporation, a weaker doublet was indicated at 2110-2210 cm −1 in the sp area [44]. The 2850 and 2958 cm −1 peaks are assigned to the symmetric modes of sp 3 -CH 3 and sp 3 -CH 2 groups, respectively [45]. ...
We have deposited diamond-like carbon (DLC) films on glass and Si substrates with direct ion beam deposition technique and investigated the effect of N2 doping on their structural, mechanical, and optical properties. The DLC coatings were doped with nitrogen under different flow rates of 5, 10, 20, 40, and 50 sccm. Morphological characteristics investigation of the prepared samples showed decrement in their average roughness from 4.1 to 0.68 nm. Raman studies showed that the number of graphitic sp2 bonding increased with N doping. By increasing the N2 content, the graphite cluster size increased. FTIR measurement revealed the functional groups available in the prepared samples. UV–Vis analysis showed that the optical transmission of nitrogen-doped DLC (N-DLC) coatings decreased when N2 content increased from 5 to 40 sccm followed by decrement in both the optical band gap and the internal stress. Finally, the mechanical properties such as hardness and elastic modulus decreased by increasing N2 content from 5 to 40 sccm.
... Kiyota et al. [19] and Roy et al. [20] studied electron field emission from DLC films deposited by electrolysis of methanol and acetic acid + deionized water solution respectively. In our previous report [21] we have shown that field emission properties of DLC films were improved by nitrogen doping. Yan et al. [22] and Li et al. [23] studied electron field emission from electrodeposited nitrogen incorporated DLC films. ...
... The electrolysis deposition system was similar to that was used in our previous work [21]. The Si (400) substrate with a resistivity of 20 -cm was mounted on the negative electrode. ...
... % of Ag, whereas for the pure DLC film it was 6.3 V/μm. The value of threshold field in this study is lower than that of sulfur doped DLC (6.97 V/μm) [24] and nitrogen doped DLC (4 V/μm) [25]. The slope, of the F-N plot ( Fig. 4(b)) represents the resultant effect of work function and the field enhancement factor. ...
The electron field emission property of nanostructure wrinkle created by silver doped amorphous diamond like carbon (a-Ag:DLC) thin film have been reported. The amorphous Ag:DLC thin film have been deposited on elastomeric polymer of poly-dimenthylsiloxane (PDMS) and silicon substrate by direct current plasma enhanced chemical vapor deposition (DC-PECVD) process. Due to difference in elastic moduli of PDMS substrate and a-Ag:DLC thin films, a well-defined nanostructure wrinkle pattern have formed on PDMS surface. Is has been observed that the wavelength of the created wrinkle decreased as increased the Ag content in the DLC film. Due to the surface nanostructure as well as change in electronic structure by Ag doping, the a-Ag:DLC wrinkled film showed good electron field emission properties with a low threshold field.
... The electron field emission properties of a-DLC films are mainly dependent on the variation of chemical bonding structure, surface morphology and the doping of different metal and non-metal elements [7][8][9][10][11]. Doping of different metal and non-metal, lifting up the Fermi level which in turn lowers the work function of a-DLC and as a result in electron field emission occurs at low turn-on fields. ...
... Field emission is a surface-sensitive phenomenon and most of the experimental work in past have focused on display applications of a-DLC [7][8][9][10][11]. The effect of temperature on boron doped DLC have reported by Chen et al. [12]. ...
... It has been observed that the threshold field was greatly reduced due to copper incorporation. The value of threshold field in this study is lower than that of sulfur doped DLC (6.97 V/μm) [15] nitrogen doped DLC (4 V/μm) [11] and Sn doped DLC (3.5 V/μm) [10]. The slope, of the F-N plot ( Fig. 4(b)) represents the resultant effect of work function and the field enhancement factor. ...
The effect of temperature on the electron field emission properties of copper incorporated amorphous diamond like carbon (a-Cu:DLC) thin films have been reported. The a-Cu:DLC thin films have been deposited on indium tin oxide (ITO) coated glass and silicon substrate by the radio frequency sputtering process. The chemical composition of the films was investigated using X-ray photoelectron spectroscopy and the micro structure was established using high resolution transmission electron microscopy. The sp² and sp³ bonding ratio in the a-Cu:DLC have been analyzed by the Fourier transformed infrared spectroscopy studies. The material showed excellent electron field emission properties; which was optimized by varying the copper atomic percentage and temperature of the films. It was found that the threshold field and effective emission barrier were reduced significantly by copper incorporation as well as temperature and a detailed explanation towards emission mechanism has been provided.
... S is a valuable dopant from an optical and electronic point of view since S is considered an n-donor in diamond films and it has been observed that it increases the electron mobility in DLC films, thus improving the films electron field emission properties. 18,19 Furthermore, there are reports on S-doped DLC films which show signs of superconductivity. 20,21 In addition, C-based thin films containing F show improved mechanical properties, specifically low surface energy, low friction coefficient, and chemical inertness. ...
A new carbon-based compound: CSxFy is reported. Geometry optimizations and energy calculations were performed by density functional theory on graphene-like model systems containing sulfur and fluorine atoms. It is shown that for [S + F] concentrations in the range of 0-10 at. %, short-range ordered structural characteristics similar to graphene pieces containing ring defects are energetically favorable. The modeling predicts that CSxFy exhibiting graphite and fullerene-like characteristics may be synthesized for the mentioned concentration range. Accordingly, CSxFy thin films were synthesized from a graphite solid target and using sulfur hexafluoride as S and F source. In agreement with the theoretical prediction, transmission electron microscopy characterization and selected area electron diffraction confirmed the presence of small ordered clusters with graphitic features in a sample containing 0.4 at. % of S and 3.4 at. % of F.
... The incorporation of a donor dopant such as nitrogen or sulfur [9] can enhance the field emission properties of the DLC films effectively, because n-type doping can increase their electron emission at low turn-on fields by raising their Fermi level and lowering the work function of the films. Another factor that can significantly impact the field emission properties of the DLC emitters is their surface morphology. ...
Homogeneous diamond-like carbon (DLC) films were deposited on Si supports by a pulsed filtered cathodic vacuum arc deposition system. Using DLC films masked by Ni nanoparticles as precursors, highly aligned diamond-like carbon nanorod (DLCNR) arrays were fabricated by the etching of inductively coupled radio frequency oxygen plasma. The as-prepared DLCNR arrays exhibit excellent field emission properties with a low turn-on field of 2.005 V μm-1 and a threshold field of 4.312 V μm-1, respectively. Raman spectroscopy and x-ray photoelectron spectroscopy were employed to determine the chemical bonding structural change of DLC films before and after etching. It is confirmed that DLC films have good connection with Si supports via the formation of the SiC phase, and larger conductive sp2 domains are formed in the as-etched DLC films, which play essential roles in the enhanced field emission properties for DLCNR arrays.
... The Fourier transformed infrared spectroscopy (FTIR) was carried out to further understand the incorporating of P, N and S in carbon. As shown in Fig. 7a, all spectra show a pronounced band at 1415 cm À1 , which is assigned to sp 2 carbon vibration [45]. The broad band at around 3437 cm À1 is due to -OH stretching in hydroxyls and physisorbed water [45,46]. ...
... As shown in Fig. 7a, all spectra show a pronounced band at 1415 cm À1 , which is assigned to sp 2 carbon vibration [45]. The broad band at around 3437 cm À1 is due to -OH stretching in hydroxyls and physisorbed water [45,46]. The peak at $3231 cm À1 is attributed to N-H stretching, indicating the existence of amino groups in the pristine sample, and it gradually decomposes with the increasing of heattreatment temperature [47]. ...
... For the sample heat-treated at 200°C and 350°C, the bands at 1002 cm À1 and 1200-1180 cm À1 are the characteristic of C-C [49] and C-O stretching [46], respectively. As the temperature goes to 500°C, a broad peak at 1336-1066 cm À1 (including 1121 and 1215 cm À1 ) can be assigned to C-N stretching, implying the formation of C-N bonding in the sample [45,50]. The peak at 1195 cm À1 can also be identified as C-S bonding, revealing the doping of S into carbon [51,52]. ...
