Fig 7 - uploaded by Pierre Berini
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Energy band diagram of MQW region along with InP claddings near threshold. Solid lines show conduction (Ec) and valence (Ev) band edges, and dashed lines show electron (Efn) and hole (Efp) Fermi levels.
Source publication
p>We propose a tunable plasmonic semiconductor laser that exploits loss perturbation as a tuning mechanism. A metal oxide semiconductor (MOS) capacitive structure is added on top of an edge-emitting Fabry-Perot (FP) diode laser, such that a hybrid plasmonic TM mode that overlaps partly with the MOS capacitor and the semiconductor gain region is sup...
Contexts in source publication
Context 1
... the valence band edge (EV) of Δí µí°¸í µí° ¶/Δí µí°¸í µí± = 0.7/0.3 is typically assumed [37][38][39]. At the heterojunction of wells and barriers we assume in our simulations that Δí µí°¸í µí° ¶ = 0.218 and Δí µí°¸í µí± = 0.122, which is extracted from work functions of binary constituents of AlGaInAs. The MQW energy band diagram is shown in Fig. 7. The strong barrier in the MQW region in the conduction band will help prevent electron leakage at high ...
Context 2
... the valence band edge (EV) of Δí µí°¸í µí° ¶/Δí µí°¸í µí± = 0.7/0.3 is typically assumed [37][38][39]. At the heterojunction of wells and barriers we assume in our simulations that Δí µí°¸í µí° ¶ = 0.218 and Δí µí°¸í µí± = 0.122, which is extracted from work functions of binary constituents of AlGaInAs. The MQW energy band diagram is shown in Fig. 7. The strong barrier in the MQW region in the conduction band will help prevent electron leakage at high ...
