FIG 12 - uploaded by Vladimir L. Kalashnikov
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Electric field intensity for pulses with λ = 1550 nm, focused 100 µm below the surface of Si, with (t 0 = 100 fs/E 0 = 10 nJ) in Figure 12(a) and (t 0 = 1000 fs/E 0 = 100 nJ) in Figure 12(b). The numerical aperture for both pulses is 0.85
Source publication
The pronounced dependence of the nonlinear parameters of both dielectric and semiconductor materials on the wavelength, and the nonlinear interaction between the ultra-short laser pulse and the material requires precise control of the wavelength of the pulse, in addition to the precise control of the pulse energy, pulse duration and focusing optics...
