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Dispersion of a) energy and b) velocity in the nonparabolic band (solid lines) and its parabolic approximation (dashed lines).

Dispersion of a) energy and b) velocity in the nonparabolic band (solid lines) and its parabolic approximation (dashed lines).

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Novel materials, with enhanced light–matter interaction capabilities, play an essential role in achieving the lofty goals of nonlinear optics. Recently, epsilon‐near‐zero (ENZ) media have emerged as a promising candidate to enable the enhancement of several nonlinear processes including refractive index modulation and harmonic generation. Here, the...

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... m * is the effective mass at k = 0, E gap is the bandgap energy and we have introduced the "nonparabolicity" wavevector k 0 = √ m * E gap ∕2ℏ 2 at which the dispersion changes from "parabolalike" to "linear-like" as shown in Figure 3a, where the energy is measured relative to the bottom of conduction band, wavevectors are normalized to k 0 , and the energy is normalized to E gap ∕2. The velocity, plotted in Figure 3b, is ...
Context 2
... m * is the effective mass at k = 0, E gap is the bandgap energy and we have introduced the "nonparabolicity" wavevector k 0 = √ m * E gap ∕2ℏ 2 at which the dispersion changes from "parabolalike" to "linear-like" as shown in Figure 3a, where the energy is measured relative to the bottom of conduction band, wavevectors are normalized to k 0 , and the energy is normalized to E gap ∕2. The velocity, plotted in Figure 3b, is ...
Context 3
... this we can see two possible avenues from which optical nonlinearities can arise, similar to the ideal two-level system described in Section 2. The first avenue is through an applied electric field which effectively polarizes the conduction band electrons in the nonparabolic band (see (12) and Figure 3b). Note that the expansion of carrier velocity, i.e., conductivity current in (12) is conceptually no different from the expansion of polarization (and displacement current) in (6) and (7), and involves no characteristic time. ...

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... On the other hand, hot electron nonlinearities stem from changes of the electrons effective mass [8]. In fact, when pumping a metallic material, the electrons in the conduction band are heated up thus modifying their effective mass which in turn changes the plasma frequency, and ultimately modifies the refractive index. ...
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... Fast nonlinearities encompass instantaneous (typically sub %1 fs) 127 processes like electronic polarization (virtual transitions) and the collective oscillation of the free electron gas within the conduction band (real transition). 58 They are responsible for driving processes such as harmonic generation. Electronic polarization nonlinearities in semiconductors are well covered in various nonlinear textbooks 48,128 and will not be repeated here. ...
... A. Physical mechanism of fast free-carrier nonlinearity While slow free carrier effects are most often discussed in ENZ literature, a fast free-carrier process in Drude ENZ materials exists at all wavelengths and can dominate the response for hx < (3/4)E g . Khurgin et al. 58 describe this process as the incident energy driving the oscillation of free electrons within a non-parabolic conduction. Under small driving fields, the electrons oscillate predominantly in the parabolic region of the band where the electron velocity grows linearly with momentum-giving rise to a current density J ¼ Àq k v(k,t) that is linear. ...
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... 17,23,31,32 Transparent conducting oxides (TCOs) belong to the epsilon-nearzero (ENZ) materials, which exhibit large permittivity tunability under applied voltage and/or light illumination. 30,[33][34][35] TCOs exhibit fast switching times and low switching voltages when operating under an electrical switching mechanism, 30,33-35 which is highly advantageous for efficient neuromorphic networks. Furthermore, TCOs are CMOScompatible and produce low optical loss, akin to the SiN platform. ...
... For interband absorption, the energy of the optical pump must be greater than the bandgap of the TCO to excite photocarriers from the valence band to the conduction band. 30,34 As in the case of the electrical switching, the photoexcited carriers lower the permittivity of the TCO via Drude dispersion and move the TCO closer to the ENZ region. On the other hand, intraband absorption with the pump energy lower than the bandgap heats up electrons in the conduction band, which move it toward higher energies. ...
... In our previous papers, we focused on ITOs 28,29 as it is currently the most popular TCO material commonly found in the literature. 30,[33][34][35][43][44][45] However, the family of TCO materials is very broad and, depending on applications and an operation wavelength range, the proper TCO material can be identified. In this paper, we examine first four TCO materials, AZO, GZO, ITO, and In doped CdO, which represent a wide spectrum of ENZ wavelengths ranging from k ¼ 1.0 lm for 6% Ga:ZnO (GZO) through, k ¼ 1.5 lm for ITO, k ¼ 1.82 lm for In:CdO to k ¼ 3.34 lm for 10% Al:ZnO (AZO). ...
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... Additionally, because nonlinearities in ENZ are non-instantaneous and involve real states (so-called "slow" processes), they should not be compared to instantaneous nonlinearities involving virtual states (so-called "fast" processes), as is common, as they are well-known to be much larger. 89,98 A more appropriate comparison is to similar non-instantaneous process materials, such as semiconductors and metals. Finally, while it is common to quantify nonlinearities via χ (3) , n 2 , or α 2 , these terms imply properties such as linearity with respect to applied irradiance and an instantaneous response. ...
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The engineering of the spatial and temporal properties of both the electric permittivity and the refractive index of materials is at the core of photonics. When vanishing to zero, those two variables provide efficient knobs to control light−matter interactions. This Perspective aims at providing an overview of the state of the art and the challenges in emerging research areas where the use of near-zero refractive index and hyperbolic metamaterials is pivotal, in particular, light and thermal emission, nonlinear optics, sensing applications, and time-varying photonics.
... Thirdorder optical nonlinearity can be generally subdivided into nonlinearity caused by bound electrons and free electrons. 35 One of the former is well known as the optical Kerr effect, which is related to virtual processes and not mediated by real transition. 25 On the other hand, real excitation of free electrons takes place and persists over a certain lifetime. ...
... For inorganic ENZ materials, the free-carrier-related nonlinearity is estimated to be about two order of magnitude higher than the Kerr nonlinearity. 35 To understand the ENZ effect in the p-type PEDOT film, we employed the z-scan technique to evaluate the nonlinear optical behavior of EG-modified PEDOT around its ENZ wavelength. Figure 2a shows the used z-scan system, where a TM-polarized light with a Gaussian distribution of light intensity is used to measure the transmittance at different locations along the z-axis. ...
... In general, the free-carrier-related nonlinearity in n-type degenerate ENZ materials is due to the intraband transition of electrons from the conduction band edge. The excited electrons modify the average effective mass of carriers due to the nature of nonparabolic bands 22,35 and thus change the screened plasma frequency ω p . The magnitude of the optical nonlinearity in ENZ materials could be estimated on the basis of the Drude dispersion model as proposed by Secondo et al. 22 ...
... The decay time is deep in the subpicosecond scale, which agrees with the strong electron-phonon coupling hypothesis [38]. We note that we called this component "fast" to express the timescale (femtosecond), not the physical mechanism related to virtual electronic transitions, as often understood in nonlinear optics [39]. The second component (denoted "2") is related to the occurrence of the second maximum in the time response of the reflectance in the pico-second time scale. ...
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