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Quantum bandgap buffer layers can improve sunlight absorption in the short wavelength region, hence improving the performance of CIGS solar cells. In this study, we use numerical modelling to determine the impact of various buffer layers’ electrical characteristics on the performance of CIGS thin film photovoltaic devices, particularly, carrier con...
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Quantum bandgap buffer layers can improve sunlight absorption in the short wavelength region, hence improving the performance of CIGS solar cells. In this study, we use numerical modelling to determine the impact of various buffer layers' electrical characteristics on the performance of CIGS thin film photovoltaic devices, particularly, carrier con...
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... Renewable energy provides a cleaner and more sustainable alternative to traditional energy source by protecting the environment to promote a better future for the mankind. A lot of research have been done on the conversion of abundant solar energy into electrical energy for many years as a potential alternate energy source to fossil fuels, coal, oil etc [1,2]. In photovoltaic industries, CIGSe 2 solar cells have attracted many researchers attention because of its high absorption coefficient, low cost and low toxicity. ...
... The alignment of the energy band is essential in thin film solar cells. However, there are several instances when it is clear that the theoretical predictions and the band alignment as determined by experiment differ significantly [76,77]. The device's properties may significantly differ as a result of this variance. ...
Green energy transition and climate change have gathered significant momentum in the world because of the rising population and increased clean energy demands. For this reason, renewable energy alternatives such as inexhaustible photo energy from the sun appear to be the ultimate solution to the world's energy needs. Formamidinium tin tri-iodide (HC(NH 2) 2 SnI 3)-based perovskites are found to be more efficient and stable than their methylammonium tin tri-iodide (MASnI 3) counterparts because of its wider bandgap and better temperature stability. A device simulation of FASnI 3-based solar cell is numerically performed using solar cell capacitance simulator (SCAPS-1D). The focus is to investigate the effect of changing working temperature, metal back contact, absorber thickness, defect density, and doping concentration on the performance of the proposed solar cell device. The optimised solar cell parameters of the proposed solar cell were: short-circuit current density (Jsc) of 28.45 mAcm −2 , open-circuit voltage (Voc) of 1.0042 V, fill factor of 63.73%, and power conversion efficiency of 18.21% at 300 K, thus, paving the way for novel perovskite solar cells which are environmentally benign because they are lead-free, have better absorption efficiency, and can be injected into the production work flow for commercial applications. K E Y W O R D S energy harvesting, numerical analysis, semiconductor heterojunctions, semiconductor thin films, solar cells
... They noted that the co-sensitizers acted as a buffer layer, which accommodated the band alignments at the interface of the semiconductors. 123 It was seen that the simple experimental setup used in the SILAR process helped superficially incorporate the QD co-sensitizers. The development of the hetero-structured QDs is carried out in different sequential steps. ...
In the recent past, there has been an increase in the use of semiconductor nanostructures that convert solar energy to electrical energy. This has encouraged the development of better and more efficient solar cells (SCs). Numerous investigations have been conducted into synthesizing novel semiconductor materials and tuning the electronic properties based on the shape, size, composition, and assembly of the quantum dots to improve hybrid assemblies. Recent studies that are determining the prospects of quantum dot SCs can form the basis for improving photovoltaic efficiency. Here, we have reviewed studies that investigated the sensitization methods for fabricating highly efficient SCs. We also discussed some examples that would help other researchers who want to sensitize quantum dot (QD) SCs. Thereafter, we analyzed the main and popular strategies that can be used for sensitizing the QD SCs within the limitations, advantages, and prospects of fabricating high-efficiency and stable QDs. During this work, we offered strong technical support and a theoretical basis for improving the industrial applications of QD. In addition, we provide a reference that can inspire other researchers who aim to improve the performance of SCs.
... Solar cell manufacturing has passed through different phases, from the first generation to the next. The main goal of researchers is to find materials that achieve high performance at a low cost and in less time [1]. Compared to silicon-based solar cells, chalcopyrite-based solar cells are capable of absorbing sunlight with a small thickness without affecting their performance; as a result, the fabrication cost is reduced. ...
... As a result, a large number of manuscripts investigated the effect of the electron back reflector layer, which is a layer between the back contact and absorber layer, on reducing CIGS absorber layer thickness and retaining the high performance of CIGS-based solar cells [3]- [7]. On the other hand, other researchers employed the effect of the proper buffer layer to enhance the performance of CIGS solar cells [1], [8], [9]. ...
In this study, we proposed a Cd-free Cu (In,Ga)Se2 (CIGS)-based solar cell with low-cost and high performance. This is achieved by using lead sulfide (PbS) as an electron back reflector and zinc sulfide (ZnS) as a buffer layer instead of cadmium sulfide (CdS) layer. 1D-solar cell capacitance simulator (SCAPS) was employed to optimize our proposed structure of Al-ZnO/ZnS/CIGS/PbS/Mo by investigating the effect of varying thicknesses and doping concentrations of CIGS absorber layer and ZnS buffer layer. Moreover, the effect of operating temperature on the performance of this structure was investigated. The results of the simulation of J-V characteristics showed that the efficiency of the proposed structure at 300 K is 25.5% with a 0.9 μm thickness and acceptor concentration of 10 17 cm-3 for CIGS layer and 0.03 μm thickness and donor concentration of 3×10 17 cm-3 ZnS layers, respectively. The proposed work improves the efficiency; in addition, the thickness of CIGS layer decreases significantly.
... 2 CdS is the most commonly implemented n-type buffer layer for thin-lm solar cells with excellent performance. 3 As a buffer layer, for optimum minority carrier transport, CdS ought to be as thin as possible to ensure low series resistance, as a thicker lm might reduce the Schottky barrier's effectiveness. Consequently to enhance the CdS conductivity, a specic process called doping is achieved by introducing impurities into the semiconductor crystal intentionally, which can be either acceptor or donor atoms in their crystalline lattice. ...
... 52,53 In this case, Ag + donated an electron to Cd 2+ . As a result of the charge transition from Ag + ions to Cd complexes, the [Cd(NH 3 Fig. 11. ...
A high-quality buffer layer serves as one of the most significant issues that influences the efficiency of solar cells. Doping in semiconductors is an important strategy that can be used to control the reaction growth. In this study, the influence of Ag doping on the morphological, optical and electrical properties of CdS thin films have been obtained. Herein, we propose the mechanism of CdS film formation with and without Ag ions, and we found that changes in the reaction of preparing CdS by the chemical bath deposition (CBD) method cause a shift in the geometric composition of the CdS film. XRD showed that the position of peaks in the doped films are displaced to wider angles, indicating a drop in the crystal lattice constant. The optical analysis confirmed direct transition with an optical energy gap between 2.10 and 2.43 eV. The morphological studies show conglomerates with inhomogeneously distributed spherical grains with an increase of the Ag ratio. The electrical data revealed that the annealed Ag-doped CdS with 5% Ag has the highest carrier concentration (3.28 Â 10 15 cm À3) and the lowest resistivity (45.2 U cm). According to the results, the optimal Ag ratio was obtained at Ag 5%, which encourages the usage of CdS in this ratio as an efficient buffer layer on photovoltaic devices.
... The pH ranges most suitable for preparing these CdS films was (9)(10)(11) to 11, while 10 is the optimal pH which giving a majority for the cubic geometry of the crystal structure 65 . An increase in pH above 12 reduces the crystallinity of the CdS film and results in an amorphous CdS film 66 3 Cd-] 2+ -OH-Site are an important intermediate compound formed during the preparation of CdS film when using NH 4 OH for setting the pH system of the reaction. ...
The aim of this study is to acquire a deeper understanding of the response mechanism that is associated with the formation of CdS thin films. We presented an effective and new hybrid sensitisation technique, which involved the 1-step linker between the related chemical bath deposition (CBD) process and the traditional doping method during CBD for synthesising high-quality, CdS thin films. The mechanism for the combined synthesis of the films is also describes. CdS films were electrostatically bonded to soda-lime glass, causing the formation of the intermediate complexes [Cd(NH3)4]2+, which aided in the collision of these complexes with a soda-lime glass slide. In the one-step fabrication technique, 3-Mercaptopropionic Acid (MPA) was employed as a second source of sulphur ions and a linker molecule. Optical studies showed that the bandgap ranged between (2.26–2.52) eV. CdS + MPA films exhibited a uniform distribution of spherical molecules based on their morphological properties. After annealing, this approach significantly altered the electrical characteristics of CdS films. The CdS + MPA films displayed the highest carrier concentration whereas the CdS + Ag + MPA films exhibited the lowest resistivity, with a jump of 3 orders of magnitude.
... Figure 3 demonstrates that Jsc is reduced as the bandgap is increased, while Voc, a direct function of the bandgap, is also increased. A higher bandgap leads to a Voc increase and a rate of radiative recombination decrease [49]. Conversely, the Jsc parameter changes significantly, as indicated in Figure 3. ...
... Figure 3 demonstrates that J sc is reduced as the bandgap is increased, while V oc , a direct function of the bandgap, is also increased. A higher bandgap leads to a V oc increase and a rate of radiative recombination decrease [49]. Conversely, the J sc parameter changes significantly, as indicated in Figure 3. ...
... Another crucial characteristic that can dramatically affect device performance is the absorber layer's defect density. The greater concentrations of deficiencies in the absorber layer produce a greater rate of recombination due to the growth of pinholes, and also a higher rate of the film's degradation, a lower strength, and a decrease in the device's overall performance [49]. On the other hand, when there is low defect density, the length of the carrier diffusion is enhanced, and the process of the recombination process is rejected, both of which cause an improved PV performance. ...
Antimony trisulfide (Sb2Se3), a non-toxic and accessible substance, has possibilities as a material for use in solar cells. The current study numerically analyses Sb2Se3 solar cells through the program Solar Cell Capacitance Simulator (SCAPS). A detailed simulation and analysis of the influence of the Sb2Se3 layer’s thickness, defect density, band gap, energy level, and carrier concentration on the devices’ performance are carried out. The results indicate that a good device performance is guaranteed with the following values in the Sb2Se3 layer: an 800 optimal thickness for the Sb2Se3 absorber; less than 1015 cm−3 for the absorber defect density; a 1.2 eV optimum band gap; a 0.1 eV energy level (above the valence band); and a 1014 cm−3 carrier concentration. The highest efficiency of 30% can be attained following optimization of diverse parameters. The simulation outcomes offer beneficial insights and directions for designing and engineering Sb2Se3 solar cells.
... Although crystalline materials have higher conversion efficiencies, their estimated production is higher than poly and microcrystalline materials. Polycrystalline and microcrystalline materials are getting prominence in research because they are stable, accurate, and costeffective to manufacture [3]. The energy band gap of a copper cadmium tin sulphide solar cell is 1.37 eV, and the absorption coefficient is 10 4 cm -1 (Cu2CdSnS4). ...
CCTS-based solar cells show promising performance in the realm of sunlight-based energy production in this study. Optimizing the buffer layer remains a barrier to improving the efficacy of CCTS-based solar cells. The initial structure is made up of a CCTS absorber layer, a ZnO resistive layer, an AZO transport conducting layer, and a window layer, as well as different buffer layers (CdS, ZnS, and ZnSe) to find the best buffer layer. The second structure is made up of a CCTS absorber layer, a ZnO resistive layer, an AZO transport conductive layer, a window layer, and different buffer layers (CdS, ZnS, and ZnSe) to find the best buffer layer. The second structure consists of the same layers as the first structure, minus the resistive layer ZnO, while the third structure consists of the same layers, minus the window layer AZO. The solar cell in this structure's open circuit (Voc), short circuit current (Jsc), fill factor (FF), and conversion efficiency (PCE) revealed that the first structure has good agreement, and that these buffer layers were used to investigate the effect of buffer thickness as alternative buffer layers. Among these three buffers, cadmium sulphide CdS) is preferable over Zns and ZnSe, and after improving the initial structure, the power conversion efficiency (PCE) was 13.47% for buffer Cds, 13.46%. The simulation showed that for structure MO / CCTS /(CdS)/ZnO / AZO at (3100) nm of absorber layer (CCTS), 40 nm of buffer layer (cds), 10 nm of resistive layer (ZnO), and 60 nm of AZO performs the best for (Voc = 0.573 V, Jsc = 30.344 mAcm-2, FF = 72.57 % , and PCE = 13.91%).
Designing effective strategies for mitigating energy crisis highlights a research gap in current solar cell technologies. This study explores the inherent physicochemical properties of thin films composed of copper gallium sulfide telluride (CuGa1−xCrx(S,Te)2) with chromium substitution, prepared through the chemical spray pyrolysis technique. The investigation showcases how the concept of intermediate band structuring contributes to enhancing solar cell efficiency. This enhancement can be attributed to the remarkable mobility (from 1.80 to 5.48 cm² V⁻¹ s⁻¹) and conductivity (from 1.00 to 6.06 S cm⁻¹) exhibited by pure and 0.1 chromium thin films, respectively. Notably, the Cr‐0.1‐substituted CGST film displays maximum photoresponsivity of 0.624 AW⁻¹, an external quantum efficiency of 145%, and a detectivity of 2.37E10. The fabricated solar cell is subjected to theoretical simulation using solar cell capacitance simulator‐1D software, revealing an upward trend in efficiency from 7.13% to 11.23% with increasing Cr substitution from 0.025 to 0.1. This efficiency improvement can be ascribed to the reduction in bandgap (from 2.40 to 1.72 eV) and the creation of a sub‐band in CGST due to Cr incorporation, as substantiated by UV–vis and NIR spectroscopy. These outcomes suggest that Cr‐0.1‐substituted CGST holds promise as a potential thin film absorber material in solar photovoltaics.
Silver sulfide (Ag2S) chalcogenide compound can be a viable absorber in the applications of thin film solar cells owing to its optimum bandgap of 1.1 eV and high absorption coefficient. Herein, we propose a novel Ag2S‐based n‐CdS/p‐Ag2S/p⁺‐SnS double‐heterojunction solar cell. The numerical analysis of the device has been performed with SCAPS‐1D (Solar Cell Capacitance Simulator). In the case of single heterojunction, n‐CdS/p‐Ag2S manifests an efficiency of 19.75%, where VOC = 0.66 V, JSC = 36.99 mA/cm² and FF = 81.50%. However, Ag2S‐based double‐heterojunction device with optimized structure provides the efficiency of 29.51% with VOC = 0.81 V, JSC = 42.81 mA/cm² and FF =85.24%. The noteworthy augmentation of VOC and JSC in double‐heterojunction results from the reduction in surface recombination velocity and rise in built‐in voltage in the p‐Ag2S/p⁺‐SnS hetero‐interfaces that promote the higher efficiency of the device. These theoretical insights indicate a path for fabrication of an efficient Ag2S based thin film solar cell.
