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Details of RCA cleaning process
Source publication
In this paper, we successfully fabricate polycrystalline silicon films with very large and uniform-size grains by the method of nanometer thick aluminum induced crystallization (nano-AIC) on the a-Si:H film deposited by plasma enhanced chemical vapor deposition (PECVD). The effect of annealing ramp-up time is discussed. Four different annealing ram...
Context in source publication
Context 1
... cleaning process was applied before film deposition. Table 1 shows the details of RCA cleaning process in our study. In order to simulate glass substrate, an SiO 2 film with film thickness of 2 µm was deposited over wafer surface by plasma enhanced chemical vapor deposition (PECVD) to prevent the crystal orientation of the substrate from affecting the crystallization of the a-Si:H [10]. ...
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Stopping the plasma-enhanced chemical vapor deposition (PECVD) once and maintaining the film in a vacuum for 30 s were performed. This was done several times during the formation of a film of i-layer microcrystalline silicon (μc-Si:H) used in thin-film silicon tandem solar cells. This process aimed to reduce defect regions which occur due to collis...
Citations
In our previous study, we fabricates large grain low temperature poly-crystalline silicon film by aluminum induced crystallization (AIC) method. The fabrication process is to deposite aluminum layer on top of the a-Si:H film deposited by plasma enhanced chemical vapor deposition (PECVD) [1]. In this paper, we discussed more about the effect of different aluminum thickness of the AIC process. Five kinds of specimens with different aluminum thickness of, 10, 20, 40, 80, and 160 nm, respectively; are fabricated and tested. The annealing temperature is set at 350degC and 30 min in the annealing stage. The crystallinity of the annealed silicon film is discussed in this paper. XRD and Raman spectra analysis are used to identify the crystallinity of specimens made under different aluminum thicknesses. Raman results show that a-Si film will be crystallized if the Al film thickness is over 40 nm aluminum thickness. The crystallinity volume fraction calculated is about 45~90%. The I-V characteristic is tested to see the magnitude of leakage current of poly silicon film made in our study.
