Design schematics. (a) The MTJ device is stacked on top of the heavy metal layer. Charge current is injected into the HM layer alongˆxalongˆ alongˆx, which injectsˆy injectsˆ injectsˆy-polarized spin current into the free-FM of the MTJ. (b). Circuit design for ReLU functionality. The current source I bias converts the change in resistance to a change in voltage that is connected to the CMOS inverter.

Contexts in source publication

Context 1

... functionality. This is achieved when a spin current whose polarization is orthogonal to the anisotropy direction is applied to the free-FM. In this work, we inject a ˆ y− polarized spin current to the perpendicular magnetic anisotropy (PMA)-FM(CoFeB) in order to produce a linear rotation inˆxinˆ inˆx-component of the magnetization as shown in Fig. ...

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... linear rotation in magnetization is translated to the change in resistance via the TMR effect of the MTJ. The injected current(I bias ) renders the resistance change to the voltage change across the MTJ, which drives the CMOS inverter to obtain the ReLU functionality, as shown in Fig. 1b. The CMOS inverter operates in the linear region to invert and amplifies the voltage change across the MTJ, which results in ReLU function output as shown in Fig. 3b. The current source I bias can be replaced with a resistor to obtain the ReLU functionality at the cost of decreased output (V out ) ...

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... show in Fig. 3a the linear rotation in magnetization of the free FM layer of the MTJ. The linear rotation is Fig. 3a. The resulting linear variation of MTJ resistance is employed in the circuit design ( Fig. 1) to realize the ReLU output as shown in Fig. 3b. The output closely emulates the ReLU activation function for normalized inputs of less than 1. The parameters used in this design are given in Tab. I. We evaluate the role of different HMs in our proposed ReLU design. The ReLU circuit's performance is assessed against the thermal ...