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Two different depleted monolithic CMOS active pixel sensor (DMAPS) prototypes with a fully synchronous column-drain read-out architecture were designed and tested: LF-Monopix and TJ-Monopix. These chips are part of a R\&D effort towards a suitable implementation of a CMOS DMAPS for the HL-LHC ATLAS Inner Tracker. LF-Monopix was developed using a 15...
Contexts in source publication
Context 1
... depletion properties of LF-Monopix were estimated indirectly by looking at the most probable value (MPV) of the energy deposited by MIPs interacting with the silicon bulk for different bias voltages. The left side of Figure 4 shows the calibrated MPV of the energy deposited in 5 different pixels by MIPs interacting with a 725 µm thick sample. A fit to these data points resulted in a measured resistivity of 7.3 kΩ cm, which is larger than previously reported values of 3-5 kΩ cm (in [17], [18] and [19]) but still in agreement with the claim of a resistivity larger than 2 kΩ cm by the foundry. ...
Context 2
... fit to these data points resulted in a measured resistivity of 7.3 kΩ cm, which is larger than previously reported values of 3-5 kΩ cm (in [17], [18] and [19]) but still in agreement with the claim of a resistivity larger than 2 kΩ cm by the foundry. The right side of Figure 4 shows a distribution of uncalibrated MPVs measured by all pixels in a tuned flavour ( ∼ 100 e− threshold dispersion) of a 200 µm thick sample. The saturation of the measured MPVs for voltages equal or larger than 60V comes into good agreement with the independent measurement of ∼ 200 µm of silicon depleted for that voltage in the 725µm thick chip. ...
Context 3
... depletion properties of LF-Monopix were estimated indirectly by looking at the most probable value (MPV) of the energy deposited by MIPs interacting with the silicon bulk for different bias voltages. The left side of Figure 4 shows the calibrated MPV of the energy deposited in 5 different pixels by MIPs interacting with a 725 µm thick sample. A fit to these data points resulted in a measured resistivity of 7.3 kΩ cm, which is larger than previously reported values of 3-5 kΩ cm (in [17], [18] and [19]) but still in agreement with the claim of a resistivity larger than 2 kΩ cm by the foundry. ...
Context 4
... fit to these data points resulted in a measured resistivity of 7.3 kΩ cm, which is larger than previously reported values of 3-5 kΩ cm (in [17], [18] and [19]) but still in agreement with the claim of a resistivity larger than 2 kΩ cm by the foundry. The right side of Figure 4 shows a distribution of uncalibrated MPVs measured by all pixels in a tuned flavour ( ∼ 100 e− threshold dispersion) of a 200 µm thick sample. The saturation of the measured MPVs for voltages equal or larger than 60V comes into good agreement with the independent measurement of ∼ 200 µm of silicon depleted for that voltage in the 725µm thick chip. ...
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