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Power electronic systems have a great impact on modern society. Their applications target a more sustainable future by minimizing the negative impacts of industrialization on the environment , such as global warming effects and greenhouse gas emission. Power devices based on wide band gap (WBG) material have the potential to deliver a paradigm shif...
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... Schottky diodes are reported to be exceptionally strong in opposition to leakage current thermal runaway, since the requisite temperature leap for increasing leakage current is well overcompared to the Si PiN diode [58]. SiC power diodes can be classified primarily into three kinds: (i) SiC Schottky diode; (ii) junction barrier Schottky (JBS) diode or SiC merged PN-Schottky diode; and (iii) SiC PiN diode (Figure 2). Schottky barrier diodes (SBDs) are capable of blocking thousands of volts thanks to the larger electric field breakdown value of SiC material (Table 1). ...
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Theoretical and experimental investigations are critical for accurately investigating the structure and physical properties of semiconductors, allowing their widespread use in power electronic devices. The heat capacities are important thermal properties needed to examine the electronic and electrical properties of device materials. The specific he...
In this paper, a methodology is proposed for studying the current collapse effects of Gallium Nitride (GaN) power diodes and the consequences on the dynamic on-resistance (RON). Indeed, the growing interest of GaN based, high frequency power conversion requires an accurate characterization and a deep understanding of the device’s behaviour before a...
New aerodynamic aircraft concepts enable the storage of volumetric liquid hydrogen (LH2). Additionally, the low temperatures of LH2 allow technologies such as the superconductivity of electrical components. An increased power density of the onboard wiring harness and the electrical machine can be expected. Nevertheless, the power electronic drive i...
Vehicle electrification and digitalization are even more and more increasingly pushed by several aims, such as the improvement in sustainability, wellness, safety, and reliability. The need for onboard power electronics is a common factor for the different types of electric vehicles. Similarly, the increasing presence of onboard Internet of Things...
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Citations
... Silicon carbide (SiC) semiconductors favor faster switching, lower switching loss and lower turn-on voltage compared with the traditional silicon technology [1][2][3]. The fastswitching capability of the SiC switches provide the opportunity for developing power electronic converters with high switching frequency and high voltage ratings. ...
High frequency and high voltage switching converters utilizing wide bandgap semiconductors are gaining popularity thanks to their compactness and improved efficiency. However, the faster switching requirements gives rise to new challenges. A key issue is the increased oscillation of the drain–source voltage caused by the switching action of the complementary switch in the same phase or change of state of the other phase switches. The voltage stress caused by these oscillations can damage the switch. Furthermore, the high dv/dt during turning-on of one switch might result in false turn-on of the complementary switch due to the miller effect. In this paper, these issues are investigated in a T-type converter through analytical and experimental analysis. Based on the proposed analytical approach, simple and cost-wise solutions utilizing an optimum design of gate driver circuits and circuit layout modifications can be developed to cope with the aforementioned issues. A comprehensive analytical model of the converter with consideration of parasitic capacitances and inductances is developed. By performing sensitivity analysis on the model, the effect of the parasitic parameters on the drain–source voltage oscillation and gate–source voltage amplitude in case of false turn-on is studied. The validity of the model is then assessed through numerical simulations and experimental results.
... The recent advancement of wide band gap (WBG) semiconductors enables higher switching frequencies, expanding the frequency spectrum of the electric machines and magnetic components for power-conversion applications [1][2][3]. In particular, the increase in the switching frequency enables the downsizing of inductors, which have traditionally occupied a substantial volume in power electronics' converters. ...
This paper has investigated a method for calculating the frequency-dependent winding resistance of toroidal inductor windings with Litz-wire as well as solid-round wire. The modified Dowell’s model is employed to address the effectiveness for inductor windings with the low and high filling factors. To overcome the limitation of this model, especially for a winding densely wound around the core, an alternative approach based on the complex permeability and iterative calculations is proposed. For the calculated AC-resistance factor of five inductors with different numbers of turns, layers with the same wire diameters are compared with that of FEA, and the three air-core toroidal windings are manufactured and tested within the frequency where the self-resonance can be neglected. The proposed model demonstrates the versality of the AC-resistance calculation of both solid- and Litz-wire windings within an error of 15% across a wide range of frequencies up to 1 MHz, compared with FEA.
... In the switching losses of power MOSFET, Q gd is crucial [19]. In the test circuit with I g = 0.1 mA, I 1 = 5 A, and V ds = 30 V [20], the PSGT-MOSFET has a Q gd of 110 nC cm −2 , which is 88% lower compared to the TG-MOSFET's Q gd of 910 nC cm −2 . This reduction in Q gd indicates that the presence of gate shielding in the SG region significantly reduces parasitic capacitance, allowing for a smaller Q gd to be achieved. ...
A novel GaN trench gate vertical MOSFET (PSGT-MOSFET) with a double-shield structure composed of a separated gate (SG) and a p-type shielding layer (P_shield) is proposed and investigated. The p-type shielding layer (P_shield) is positioned within the drift region, which can suppress the electric field peak at the bottom of the trench during the off state. This helps to prevent premature breakdown of the gate oxide layer. Additionally, the presence of P_shield enables the device to have adaptive voltage withstand characteristics. The separated gate (SG) can convert a portion of gate to- -drain capacitance (Cgd) into drain-to-source capacitance (Cds), significantly reducing the gate-to-drain charge of the device. This improvement in charge distribution helps enhance the switching characteristics of the device. Later, the impact of the position and length of the p-type shielding layer (P_shield) on the breakdown voltage (BV) and specific on-resistance (Ron_sp) was studied. The influence of the position and length of the separated gate (SG) on gate charge (Qgd) and breakdown voltage was also investigated. Through TCAD simulations, the parameters of P_shield and SG were optimized. Compared to conventional GaN TG-MOSFET with the same structural parameters, the gate charge was reduced by 88%. In addition, this paper also discusses the principle of adaptive voltage withstand in PSGT-MOSFET.
... With the overall increase of the global power demand, new regulations, and de-facto standards in terms of size and efficiency, recent advancements have been done in power electronics to keep up with the required efficiency and power density [1] [2]. Besides advanced topologies, new switch technologies such as wide bandgap (WBG) semiconductors like Silicon Carbide (SiC) and Gallium Nitride (GaN) have been researched and developed for power electronics applications [3][4] [5]. Even though SiC technology is nowadays well established in the market for demanding power applications, Gallium Nitride (GaN) is recognized as a promising WBG technology thanks to a higher electron mobility (2000 cm 2 /Vs), higher electric field breakdown (3.3 MV/cm) and wide bandgap (3.45 eV), which enable lower A*RDSon for same voltage class, faster switching transients, and operation at high junction temperatures [3]. ...
... Besides advanced topologies, new switch technologies such as wide bandgap (WBG) semiconductors like Silicon Carbide (SiC) and Gallium Nitride (GaN) have been researched and developed for power electronics applications [3][4] [5]. Even though SiC technology is nowadays well established in the market for demanding power applications, Gallium Nitride (GaN) is recognized as a promising WBG technology thanks to a higher electron mobility (2000 cm 2 /Vs), higher electric field breakdown (3.3 MV/cm) and wide bandgap (3.45 eV), which enable lower A*RDSon for same voltage class, faster switching transients, and operation at high junction temperatures [3]. Most important, GaN HEMTs already today allow for a total system-level BOM saving compared to their other power semiconductor counterparts [4], making GaN devices more attractive for future applications. ...
... Wide bandgap semiconducting (WBS) materials, namely semiconductors with an energy bandgap E g > 2 eV, offer significant advantages over conventional ones (e.g., Si, GaAs), especially for applications in which a higher operating temperature and voltage are required. WBS are therefore ideal active materials for high-power high-frequency electronics [1,2], detection of ionizing radiation in harsh environments [3], high-speed data transfer and storage [4], i.e., all applications where devices based on conventional semiconductors do not ensure optimal performances and robustness. ...
... Amplitude of the modulated photocurrent signal as a function of the applied bias voltage for the NC sample (a) and the SC sample (b). Dashed lines show the best fit to experimental data obtained by using Equation(1). For a more accurate estimation of the µ e,h τ e,h product with the Hecht's model, which is strictly valid only in case of Ohmic behavior of the dark current, measurements were restricted to the 0-40 V range for the NC sample and to the 0-200 V range for the SC sample. ...
Orthorhombic κ-Ga2O3 thin films were grown for the first time on polycrystalline diamond free-standing substrates by metal-organic vapor phase epitaxy at a temperature of 650°C. Structural, morphological, electrical, and photoelectronic properties of the obtained heterostructures were evaluated by optical microscopy, X-ray diffraction, current-voltage measurements, and spectral photoconductivity, respectively. Results show that a very slow cooling, performed at low pressure (100 mbar) under a controlled He flow soon after the growth process, is mandatory to improve the quality of the κ-Ga2O3 epitaxial thin film, ensuring a good adhesion to the diamond substrate, an optimal morphology, and a lower density of electrically active defects. This paves the way for the future development of novel hybrid architectures for UV and ionizing radiation detection, exploiting the unique features of gallium oxide and diamond as wide-bandgap semiconductors.
... There are different research papers about WBG power semiconductors that show that WBG power semiconductors are applied to domestic and industrial induction heating applications. WBG power semiconductors are evaluated in different power electronic systems and compared with Si-based designs in [5], while Si-based switches are compared with WBG power switches in [6]. There is also a variety of research that is directly related to induction cookers. ...
... Ref. [19] implements GIT (Gate There are different research papers about WBG power semiconductors that show that WBG power semiconductors are applied to domestic and industrial induction heating applications. WBG power semiconductors are evaluated in different power electronic systems and compared with Si-based designs in [5], while Si-based switches are compared with WBG power switches in [6]. There is also a variety of research that is directly related to induction cookers. ...
Modern induction cookers have started to demand challenging features such as slim design, high power ratings, high performance, and silence. All those requirements are directly related to the power semiconductors used in power converters. Si (silicon)-based power semiconductors are not capable of answering those demands because of strict operating conditions, such as high ambient temperatures. Therefore, WBG (Wide Band Gap) power semiconductors have been getting attention. In this study, WBG power semiconductors will be compared with Si-based IGBT (Insulated Gate Bipolar Transistor) under different operating conditions. The best option to use WBG power semiconductors in modern induction cookers will be analyzed. The performance of a series-resonant half-bridge converter was evaluated under various operating conditions. Measurements were obtained from the real operating conditions of induction hobs. The switching frequency is changed from 20 kHz to 100 kHz, while the power rating is increased to 3.7 kW. In addition to traditional 4-zone induction cooktops, this discussion also provides a comprehensive analysis of high-segment, fully flexible induction cooktops. While the IGBT-based design exhibits 25.79 W power loss per device, the WBG device exhibits 6.87 W in the maximum power condition of conventional induction cooker operation. When it comes to high-frequency operation, the WBG power device exhibits 10.05 W at 95 kHz. Total power loss is still well below that of the IGBT-based conventional design. Appropriate usage of WBG power semiconductors in modern induction cookers can exploit many more benefits than Si-based designs.
... Another outstanding feature of SiC devices is their ability to withstand much higher breakdown voltages than their Si counterparts [11]. This feature makes them indispensable in applications requiring robust voltage tolerance, like high-voltage power transmission and electric vehicle management [4,12]. Since it exhibits high breakdown voltage and low power losses, SiC is extensively employed in power electronics [12][13][14], such as inverters and converters. ...
... This feature makes them indispensable in applications requiring robust voltage tolerance, like high-voltage power transmission and electric vehicle management [4,12]. Since it exhibits high breakdown voltage and low power losses, SiC is extensively employed in power electronics [12][13][14], such as inverters and converters. In addition, the fast-switching speed of silicon carbide and its high-frequency capabilities [14,15] make it suitable for RF systems, wireless communication and radar applications. ...
... Electronics 2023, 12, 4468 ...
This numerical simulation work investigates the basic physical mechanisms of single events induced in a target layer composed of silicon carbide exposed to natural radiation with atmospheric neutrons at the terrestrial level. Using direct calculations and extensive Geant4 simulations, this study provides an accurate investigation in terms of nuclear processes, recoil products, secondary ion production and fragment energy distributions. In addition, the thorough analysis includes a comparison between the responses to neutron irradiation of silicon carbide, carbon (diamond) and silicon targets. Finally, the consequences of these interactions in terms of the generation of electron–hole pairs, which is a fundamental mechanism underlying single-event transient effects at the device or circuit level, are discussed in detail.
... Wide bandgap (WBG) semiconductors, including materials like gallium nitride (GaN) and silicon carbide (SiC), have emerged as contenders offering superior performance and enhanced power efficiency when compared to traditional silicon devices. Their advantages extend to high-temperature operation, making them increasingly attractive across a spectrum of applications [39]. However, it is essential to acknowledge that WBG devices often come with a higher price tag. ...
Catalyzed by the increasing interest in bi-directional electric vehicles, this paper delves into their significance and the challenges they encounter. Bi-directional electric vehicles not only serve as transportation but also function as essential electricity resources. Central to this energy revolution are On-Board Chargers (OBCs), which are pivotal in converting alternating (AC) energy into direct (DC) energy and vice versa. In this context, we explore the various circuit architectures of OBCs employed in bi-directional electric vehicles. We delve into the intricacies of rectifiers, switching converters, and the application of advanced control and filtering technologies. Our analysis extends to the implications of these circuit architectures on aspects such as voltage regulation capability, energy efficiency, and thermal management. Furthermore, we address the broader significance of these developments in the integration of bidirectional systems, which are driving advances in circuit architectures to better harness the energy flexibility of electric vehicles. We emphasize the critical role of bi-directional electric vehicles in the transition toward a smart and sustainable energy grid. To enhance accessibility for a diverse readership, we will provide concise definitions or explanations for technical terms used throughout the paper, ensuring that our work is approachable even for those who may not be experts in the field.
... Recently, silicon carbide (SiC) has become a mature wide-band-gap semiconductor in microelectronics networks and especially in electric-power conversion [1] and has shown continuous high-temperature integrated circuit operation over 800 • C [2]. It has demonstrated exceptional characteristics compared to silicon, with numerous advantages in high-temperature and high-frequency applications due to its high-critical electric field and its high thermal conductivity [3]. ...
The characterization of silicon carbide (SiC) by specific electrical atomic force microscopy (AFM) modes is highly appreciated for revealing its structure and properties at a nanoscale. However, during the conductive AFM (C-AFM) measurements, the strong electric field that builds up around and below the AFM conductive tip in ambient atmosphere may lead to a direct anodic oxidation of the SiC surface due to the formation of a water nanomeniscus. In this paper, the underlying effects of the anodization are experimentally investigated for SiC multilayers with different doping levels by studying gradual SiC epitaxial-doped layers with nitrogen (N) from 5 × 1017 to 1019 at/cm3. The presence of the water nanomeniscus is probed by the AFM and analyzed with the force–distance curve when a negative bias is applied to the AFM tip. From the water meniscus breakup distance measured without and with polarization, the water meniscus volume is increased by a factor of three under polarization. AFM experimental results are supported by electrostatic modeling to study oxide growth. By taking into account the presence of the water nanomeniscus, the surface oxide layer and the SiC doping level, a 2D-axisymmetric finite element model is developed to calculate the electric field distribution nearby the tip contact and the current distributions at the nanocontact. The results demonstrate that the anodization occurred for the conductive regime in which the current depends strongly to the doping; its threshold value is 7 × 1018 at/cm3 for anodization. Finally, the characterization of a classical planar SiC-MOSFET by C-AFM is examined. Results reveal the local oxidation mechanism of the SiC material at the surface of the MOSFET structure. AFM topographies after successive C-AFM measurements show that the local oxide created by anodization is located on both sides of the MOS channel; these areas are the locations of the highly n-type-doped zones. A selective wet chemical etching confirms that the oxide induced by local anodic oxidation is a SiOCH layer.
... Control techniques are also complicated for AC decoupling configurations. Three-phase DC bypass clamped topologies are advantageous compared with unclamped DC bypass topologies that create DC link voltage balancing to eliminate the LC with low switching losses [15]- [17]. This topology utilizes the high DC link voltage; however, this topology requires an increased number of DC link capacitors. ...
his study analyses neutral point clamped-based non-isolated grid-connected inverter topologies. Transformerless inverters are widely used because of their higher efficiency, lower cost, and compatibility with grid integration. The main drawback of the non-isolation inverter is maintaining the Common Mode Voltage (CMV), eliminating the Leakage Current (LC) and galvanic isolation during the grid fault condition. Galvanic isolation and elimination of leakage current in non-isolated inverter topologies mainly depend on inverter configuration and pulse width modulation techniques used in the inverter topologies. Many single-phase non-isolated inverter topologies are configured and analysed based on these issues. However, only a few studies have been conducted on three-phase non-isolated inverter configurations. Hence, this paper examines different three-phase non-isolated inverter topologies based on neutral point clamping with modified discontinuous pulse width modulation technique on CMV, LC reduction, current total harmonic distortion, conduction losses and efficiency of the inverter structures. Simulations are carried out in MATLAB/Simulink for proposed inverter topologies, and experimental analysis has been done for validation.
