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This article suggests an increased, minimal 4-bit scaling factor based on FinFET. The HSPICE instrument is used to evaluate the multipliers premised on FinFETs. FinFETs are observed to consume 97% less strength than MOSFETs. Numerous condensers are proposed and built at 180nm innovation in this document, including 5:3, 10:4, 15:4, as well as 20:5 c...
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... MOSFET as well as FinFET-based technological advances, AND and EX-XOR gates have been implemented. Table 1 shows that the conventional MOSFET has a delay and average power are 0.38 & 3.17 while in 4-bit FINFET average and delay power are 0.139 ns and 0.54µW. Further, it is shown in Table 2. that the delay and average power in MOSFET are 0.245ns & 1.975µW and in 4-bit FINFET they are 0.103ns and 0.22µW. ...Similar publications
In this work, we propose, design and simulate a new configuration of Class AB dual output (DO) second‐generation current conveyor (DO‐CCII). Two versions of this new DO‐CCII configuration are proposed: one employing 32 nm technology‐based carbon nanotube field effect transistor (CNTFET) and the other employing the conventional complementary MOS (CM...
