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The aim of this paper is to calculate the MOSFET parasitic capacitances, and then based on the results obtained we can further see the impact of MOSFET physical parameters on these parasitic capacitances. These capacitances have a direct impact in the speed of operation of MOSFET circuits. Therefore, in order to increase the speed of operation, it...
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... by using simple approximation, we can obtain the value of parasitic capacitances which can be used for analyzing the main characteristics of MOSFET-s in AC. The Fig.1 shows the cross-section view and the top view (mask view) of typical n-channel MOSFET (enhancement- type). ...
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... the gate (L M ) has an extension over the source and drain regions (see Fig. 1), indicated with L D , the effective channel length is ...
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... fig.1 and fig.2 in three junction sidewalls (2, 3 and 4) of MOSFET, source and drain regions are surrounded by p + region, with higher doping density then substrate. Consequently, the sidewall zero-bias capacitance C j0sw , as well as the sidewall voltage equivalence factor K eq (sw) will by different from those of the bottom junction (junction 5) and sidewall junction from channel (junction 1). ...
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Citations
... Fig. 1. Cross-section area of Bulk CMOS [13] The voltage on the gate creates a channel from source to drain in Fig. 1, allowing electrons to flow. To improve conductivity, voltage is applied to the substrate. ...
Massive technological advancements are done on VLSI regarding propagation delay, performance analysis, and reducing channel length. As a result, electronic devices are becoming more portable nowadays. One of the significant concerns of VLSI is reducing the leakage current as the channel length is getting shorter day by day. As a result, the control of the gate of MOSFET over the channel length is weakening. So, a lot of leakage current passes over the entire MOSFET. To solve this problem, a new type of geometrical change is introduced in MOSFET. This innovation is known as Fully Depleted Silicon on Insulator (FD-SOI). Also, pass transistor logic is being used instead of conventional CMOS logic to reduce the chip device size. This paper focuses on reducing the no. of transistors and minimizing the power consumption simultaneously. In this manuscript a comprehensive analysis was done on Cadence Virtuoso 22nm FD-SOI technology where the proposed XNOR takes only 26% and proposed Full-Adder takes only 25% of the power consumption than conventional CMOS in different power supply.
... The gate width, denoted as L, may extend beyond the source and drain region (see Figure 1a). If we know the value of the width L and the value of L D , the effective channel length can be calculated according to the following relation [25]: ...
... The transistor behavior and the two main capacitance effects can be modelled by using a direct current (DC) NMOS transistor model and connecting the capacitances between the four terminals of the transistor as shown in Figure 2. In this way, we obtain five main capacitances: C GS , C GD , C GB , C SB and C DB , where the indexes denote the terminals of the transistor [23][24][25]. The gate capacitance effect is characterized by C GSov and C GDov (ov-overlap) and C GD , C GS and C GB capacitances [25,26]. ...
... The transistor behavior and the two main capacitance effects can be modelled by using a direct current (DC) NMOS transistor model and connecting the capacitances between the four terminals of the transistor as shown in Figure 2. In this way, we obtain five main capacitances: C GS , C GD , C GB , C SB and C DB , where the indexes denote the terminals of the transistor [23][24][25]. The gate capacitance effect is characterized by C GSov and C GDov (ov-overlap) and C GD , C GS and C GB capacitances [25,26]. Parasitic capacities of C GSov and C GDov can arise in the case of overlapping gates over the drain and source regions or in low doped drain (LDD) technology (see Figure 3) [27]. ...
All ultra-wideband (UWB) sensor applications require hardware designed directly for their specific application. The switching of broadband radio frequency and microwave signals is an integral part of almost every piece of high-frequency equipment, whether in commercial operation or laboratory conditions. The trend of integrating various circuit structures and systems on a chip (SoC) or in a single package (SiP) is also related to the need to design these integrated switches for various measuring devices and instruments in laboratories, paradoxically for their further development. Another possible use is switching high-frequency signals in telecommunications devices, whether mobile or fixed networks, for example, for switching signals from several antennas. Based on these requirements, a high-frequency semiconductor integrated switch with NMOS transistors was designed. With these transistors, it is possible to achieve higher integration than with bipolar ones. Even though MOSFET transistors have worse frequency characteristics, we can compensate them to some extent with the precise design of the circuit and layout of the chip. This article describes the analysis and design of a high-frequency semiconductor integrated switch for UWB applications consisting of three series-parallel switches controlled by CMOS logic signals. They are primarily intended for UWB sensor systems, e.g., when switching and configuring the antenna MIMO system or when switching calibration tools. The design of the switch was implemented in low-cost 0.35 µm SiGe BiCMOS technology with an emphasis on the smallest possible attenuation and the largest possible bandwidth and isolation. The reason for choosing this technology was also that other circuit structures of UWB systems were realized in this technology. Through the simulations, individual parameters of the circuit were simulated, the layout of the chip was also created, and the parameters of the circuit were simulated with the parasitic extraction and the inclusion of parasitic elements (post-layout simulations). Subsequently, the chip was manufactured and its parameters were measured and evaluated. Based on these measurements, the designed and fabricated UWB switch was found to have the following parameters: a supply current of 2 mA at 3.3 V, a bandwidth of 6 GHz, an insertion loss (at 1 GHz) of −2.2 dB, and isolation (at 1 GHz) of −33 dB, which satisfy the requirements for our UWB sensor applications.
... Except this voltages range, capacitances C GD and C GS can be regarded as linear, whose values strictly result from the top oxide capacitance C OX [19]. Capacitance C OX depends on the construction details of the transistor and it can be described similarly as for the classic MOSFET [20]: ...
The behavioural model of a graphene field-effect transistor (GFET) is proposed. In this approach the GFET element is treated as a "black box" with only external terminals available and without considering the physical phenomena directly. The presented circuit model was constructed to reflect steady-state characteristics taking also into account GFET ca-pacitances. The authors' model is defined by a relatively small number of equations which are not nested and all the parameters can be easily extracted. It was demonstrated that the proposed model allows to simulate the steady-state characteristics with the accuracy approximately as high as in the case of the physical model. The presented compact GFET model can be used for circuit or system-level simulations in the future.
... According to [30], the parasitic capacitances CGS, CGD, and CGB depend on bias conditions (they are voltage-dependent). In addition, the capacitances would have a fixed value at the DC bias point, but then alter during active operation. ...
... As we know, the CMOS technology suffers from significant parasitic capacitance, which reduces their reliability at high frequencies [19]- [21]. To circumvent this problem, one of our design objectives is to reduce the total number of transistors in the CMOS layer of our hybrid designs. ...
We present novel techniques for realising reliable low overhead logic functions and more complex systems based on the switching characteristics of memristors. Firstly, we show that memristive circuits have inherent properties for realising multiple valued MIN-MAX operations over the post algebra. We then present an efficient hybrid 1T-4M logic architecture for dual XOR/AND and XNOR/OR functionality, which can be seamlessly integrated with the existing CMOS technology. Although memristors are usually considered to operate at lower frequencies, however, recent advances in technology show their potentiality at high frequencies. To this end, we also explore the effects of high frequencies on their performance and thereby propose reliable high frequency design techniques based on our 1T-4M architectures. Experimental results, based on the design of full adders and multipliers over GF, show that the proposed designs require significantly lower power and overhead while maintaining reliable performance at low as well as at high frequencies compared to the existing techniques.
... The impact of the channel width W of MOSFET on the device channel resistance (NMOS device) is indicated in Fig. 6. Form achieved results, the channel resistance of the MOSFET will be smaller for higher values of device channel width W. But, the parasitic capacitance of the MOSFET device depends by its dimensions [14]Fig. 7 andFig. ...
The goal of this paper is to determine the influence of the main electrical and physical parameters that characterize MOSFET (the NMOS transistor), which control the device behaviour that depends on the selected parameter values. Furthermore, the paper provides directives that need to be followed during the design phase of MOSFET, which shall enable the desirable performance of the device depending on operation conditions, by controlling the fabrication process technology. Designing the MOSFET with appropriate parameters enables the design of integrated digital circuits with the best possible performance, depending on the selected MOSFET logic and the operation conditions.
... As we know, the CMOS technology suffers from significant parasitic capacitance, which reduces their reliability at high frequencies [19]- [21]. To circumvent this problem, one of our design objectives is to reduce the total number of transistors in the CMOS layer of our hybrid designs. ...
... The pseudo- MOS logic can be used to supplement the CMOS circuits in special application. The operation of pseudo-NMOS logic is based on pseudo-NMOS inverter, which is a modified form of the CMOS inverter [6, 7, 8, 9].Other values which can be controlled during MOSFET fabrication phase are their parasitic capacitance values [4, 14, 15].Fig. 1 The physical structure of an enhancement-type MOSFET (NMOS) in perspective view. ...
During the design phase of different logic gates based on MOS technologies, it is necessary to take into consideration many parameters which characterise MOS transistors. One of the parameters which characterizes all types of MOSFET transistors is the threshold voltage that has impact in static and dynamic performances of the different logic gates. The aim of this paper is to research the impact threshold voltage of NMOS (driver) and PMOS (active load) transistors during the design phase of pseudo-NMOS inverters and in pseudo-NMOS logic gates which perform specific logic functions. The results obtained emphasize the impact of each single value of the threshold voltage at the low level of the output voltage, at the level values of static current at output and on the shape of the voltage transfer characteristic in the pseudo-NMOS inverter and pseudo-NMOS logic gates. By adjusting the threshold voltage values of NMOS and PMOS transistor it's possible to design pseudo-NMOS logic gate which will have acceptable performance depending on designers' requests.
With the recent rapid improvement of wireless communication rates
[1]
,
[2]
, the cutoff frequency of semiconductor devices has gradually increased
[3]
,
[4]
, and products with large signal bandwidth circuits have become a hot topic
[5]
,
[6]
,
[7]
. Port-to-port signal transmission and coupling mechanisms are also becoming more complex with the increases in frequency, presenting a challenge for high-frequency on-chip measurement
[8]
,
[9]
. An accurate calibration must be applied to eliminate deviations between the probe terminal and the internal port of the device
[10]
. Unlike device under test (DUT), the reference plane for calibration of a vector network analyzer is from A to A’, as shown in
Figure 1
. This inevitably leads to an interconnection structure being utilized to address the mismatch between A to B and A’ to B’
[11]
,
[12]
. In response, the de-embedding technique has been developed to eliminate this extra step from the measurement data
[13]
,
[14]
.
The essential requirement of any battery-operated and mobile devices like laptops, cellular phones are that they must be small in size, consume less power, fast processing and cheaper expansion. Gordon Moore found in 1965 that the quantity of transistors on a chip will drive to be twofold every year, by manufacturing the portable devices and building circuit on the silicon chip which makes device cost effective. This drop in size of transistor is termed as scaling. Since scaling faces formidable challenges in nanometer regime, successors have been emerged as FinFET’s. They have thin fin or wing like channels enclosed by several gates. Due to many gates the design helps to improve performance and boost energy efficacy. Present work highlights the role of scaling and how scaling improves the speed of the device. The expectation from the scaled device is to consume as low power as possible, effective in costs and less design time. As we make the instrument more portable, complexity in it becomes infinite. Moore’s law supports us to realize the role of scaling to improve circuit performance and make a portable/mobile device. Here, we design 14nm, 10nm and 7nm Triple gate Fin-FET (TG Fin-FET) and investigate the Drain Induced Barrier Lowering (DIBL) and Short Channel Effect (SCE). By scaling the device DIBL and SCE are reduced giving better performance in terms of power and speed.
