Cross section of NMOS with lightly doped drain (LDD) structure.

Cross section of NMOS with lightly doped drain (LDD) structure.

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All ultra-wideband (UWB) sensor applications require hardware designed directly for their specific application. The switching of broadband radio frequency and microwave signals is an integral part of almost every piece of high-frequency equipment, whether in commercial operation or laboratory conditions. The trend of integrating various circuit str...

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... gate capacitance effect is characterized by C GSov and C GDov (ov-overlap) and C GD , C GS and C GB capacitances [25,26]. Parasitic capacities of C GSov and C GDov can arise in the case of overlapping gates over the drain and source regions or in low doped drain (LDD) technology (see Figure 3) [27]. Assuming that the NMOS transistor has a symmetrical struc-ture, that is, the drain and source are geometrically identical, the overlapping capacitances can be calculated from the following equations [23][24][25]: ...

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... [8][9][10] The application of MIMO technology extends to medical imaging, where multiple antennas function as both receivers and transmitters, with switches playing an essential role in this technology. [11][12][13] The evolution of MIMO has created new opportunities for switches in diverse fields, such as detection, 14,15 radio frequency identification (RFID), 16,17 and fifth-generation (5G) services. [18][19][20] In recent times, there has been a surge in research focusing on vehicle communication, particularly in the areas of vehicle-to-everything (V2X) and vehicle-to-vehicle communication. ...
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... Correspondingly, Cadence Design Systems is a company that specializes in EDA (Electronic Design Automation), which uses DL technology for the investigation of semiconductor reliability. The DL-based model [11]. ...
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