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Configuration of the photoelectric memory based on BP/PZT heterostructure BP/PZT FeFET. A) Schematic illustration of the photoelectric memory in FeFET with BP/PZT heterostructure fabricated on LNO/SiO2/Si substrate. B) Optical image of a typical two‐terminal FET device with few‐layer BP channel layer and contact electrodes on PZT. Inset shows the AFM line profile of the BP layer with thickness of around 6 nm. Channel width and length of the FET are defined to be 5 and 8 µm, respectively. C) Cross‐sectional TEM image of the device. D) HRTEM image of the corresponding BP/PZT heterostructure of the device, marked by a azure dashed ellipse in (C). Inset presents the clear layered structure of the BP with 0.55 nm spacing. E) Raman spectra of few layers BP on PZT/Si, bulk BP, and blank PZT/Si, respectively.
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Ferroelectric‐field‐effect‐transistor (FeFET) memory, characterized by its nonvolatile, nondestructive readout operation and low power consumption, has attracted tremendous attention in the development of next‐generation random‐access memory. However, the electrical reading processes in conventional FeFETs may attenuate the ferroelectric (FE) polar...
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Citations
... BP is a direct semiconductor with a bandgap ranging from 0.3 eV to 2 eV, boasting good photoelectric properties across a wide spectral range, from mid-infrared to visible wavelengths. When combined with Fes to construct ferroelectric field-effect transistors (FeFETs), BP-FeFETs generally exhibit high linear mobility values and high on/off ID ratios, making them suitable for nonvolatile memory devices [86,87]. By controlling the FE polarization, the FeFET device can display different photo-response modes of positive and negative photoconductivity at various polarization states. ...
Over the last few years, research activities have seen two-dimensional (2D) materials become protagonists in the field of nanotechnology. In particular, 2D materials characterized by ferroelectric properties are extremely interesting, as they are better suited for the development of miniaturized and high-performing devices. Here, we summarize the recent advances in this field, reviewing the realization of devices based on 2D ferroelectric materials, like FeFET, FTJ, and optoelectronics. The devices are realized with a wide range of material systems, from oxide materials at low dimensions to 2D materials exhibiting van der Waals interactions. We conclude by presenting how these materials could be useful in the field of devices based on magnons or surface acoustic waves.
... Second, the accumulated charges at the surface may depolarize the ferroelectric materials, thereby restoring the electronic properties of the adjacent 2DLMs.51,143 These processes can be used to optically write or erase the memory states.78,85 For example, as shown inFigure 4i, two operation schemes, i.e. "optical erase-electrical write" and "electrical erase-optical write", can be implemented on the MoS2-PZT memories. ...
As the Si-based transistors scale down to atomic dimensions, the basic principle of current electronics, which heavily relies on the tunable charge degree of freedom, faces increasing challenges to meet the future requirements of speed, switching energy, heat dissipation, packing density as well as functionalities. Heterogeneous integration, where dissimilar layers of materials and functionalities are unrestrictedly stacked at an atomic scale, is appealing to next-generation electronics, such as multi-functional, neuromorphic, spintronic and ultra-low power devices, because it unlocks technologically useful interfaces of distinct functionalities. Recently, the combination of functional perovskite oxides and the two-dimensional layered materials (2DLMs) led to unexpected functionalities and enhanced device performance. In this review, we review the recent progress of the heterogeneous integration of perovskite oxides and 2DLMs from the perspectives of fabrication and interfacial properties, electronic applications, challenges as well as outlooks. In particular, we focus on three types of attractive applications, namely field-effect transistors, memory, and neuromorphic electronics. The van der Waals integration approach is extendible to other oxides and 2DLMs, leading to almost unlimited combinations of oxides and 2DLMs and contributing to future high-performance electronic and spintronic devices.
... 62 The application of BP as the channel in phototransistors has recently been explored with a demonstration of a ferroelectric lead zirconate titante (PZT)-gated BP transistor that yields a photocurrent under 808-nm infrared laser. 66 This BP-based FE-FET boasts a high switching ratio of 10 5 , retention of 3:6310 3 s, and endurance of more than 500 cycles. All of these devices have the potential to act as light-gated memristors for logic operations with exciting applications ranging from image sensors for artificial vision to photonic neural networks in neuromorphic systems. ...
2D materials represent an exciting frontier for devices and architec-tures beyond von Neumann computing due to their atomically small structure, superior physical properties, and ability to enable gate tunability. All four major classes of emerging non-volatile memory (NVM) devices (resistive, phase change, ferroelectric, and ferromag-netic) have been integrated with 2D materials and their corresponding heterostructures. Device performance for neuromorphic archi-tectures will be compared across each of these classes, and applications ranging from crossbar arrays for multi-layer percep-trons (MLPs) to synaptic devices for spiking neural networks (SNNs) will be presented. To aid in the understanding of neuromor-phic computing, the terms ''acceleration'' and ''actualization'' are used, with the former referring to neuromorphic systems that heighten the speed and energy efficiency of existing machine-learning models and the latter more broadly representing the realization of human neurobiological functions in non-von Neumann architectures. The benefits of 2D materials are addressed in both contexts. Additionally, the landscape of 2D materials-based opto-electronic devices is briefly discussed. These devices leverage the strong optical properties of 2D materials for actualization-based systems that aim to emulate the human visual cortex. Lastly, limitations of 2D materials are considered, with the progress of 2D materials as a novel class of electronic materials for neuromorphic computing depending on their scalable synthesis in thin-film form with desired crystal quality, defect density, and phase purity.
... 62 The application of BP as the channel in phototransistors has recently been explored with a demonstration of a ferroelectric lead zirconate titante (PZT)-gated BP transistor that yields a photocurrent under 808-nm infrared laser. 66 This BP-based FE-FET boasts a high switching ratio of 10 5 , retention of 3:6310 3 s, and endurance of more than 500 cycles. All of these devices have the potential to act as light-gated memristors for logic operations with exciting applications ranging from image sensors for artificial vision to photonic neural networks in neuromorphic systems. ...
Two-dimensional (2D) materials present an exciting opportunity for devices and systems beyond the von Neumann computing architecture paradigm due to their diversity of electronic structure, physical properties, and atomically-thin, van der Waals structures that enable ease of integration with conventional electronic materials and silicon-based hardware. All major classes of non-volatile memory (NVM) devices have been demonstrated using 2D materials, including their operation as synaptic devices for applications in neuromorphic computing hardware. Their atomically-thin structure, superior physical properties, i.e., mechanical strength, electrical and thermal conductivity, as well as gate-tunable electronic properties provide performance advantages and novel functionality in NVM devices and systems. However, device performance and variability as compared to incumbent materials and technology remain major concerns for real applications. Ultimately, the progress of 2D materials as a novel class of electronic materials and specifically their application in the area of neuromorphic electronics will depend on their scalable synthesis in thin-film form with desired crystal quality, defect density, and phase purity.
... Therefore, the resistance state of the device could be changed through simple stimulation with UV light, and the switching time was noted to be shorter than that of other organic photomemory devices. [22][23][24]29 Figure 1(c) displays the UV-vis absorbance spectra of the PI film. The PI film was spin coated on a TaN/SiO 2 /Si substrate, and it was scanned with 200-800-nm light to measure its absorbance. ...
... The photomemory device could maintain the LRS for up to 12 000 s, substantially longer than that of other reported photomemory devices. [22][23][24]29 Figure 5(b) shows the endurance characteristics of the UV-operated photomemory device. For these measurements, 2-and 20-s UV irradiation processes were performed to SET and RESET the photomemory device, respectively. ...
Organic nonvolatile photomemory devices have drawn considerable attention in the field of optical computing. However, most organic nonvolatile photomemory devices use a charge-trap-type architecture that is complex and difficult to miniaturize. This paper proposes a nonvolatile polyimide (PI) resistive photomemory device with a simple metal–PI–metal configuration; its resistance can be altered using pulsed ultraviolet (UV) irradiation and can be maintained at the altered level even after irradiation has ceased. The resistance can also be returned to the initial state by subsequent irradiation with UV light. The memory window is around 7 order of magnitude. Fourier-transform infrared spectroscopy and UV–visible/near-infrared spectroscopy demonstrated that UV irradiation caused a high-energy-gap ( E g ) aromatic form of PI to transform into low- E g quinoid form, prompting the dominant conduction mechanism of the photomemory device to change from hopping conduction to ohmic conduction. A model characterizing the PI-based photomemory device was also developed and is discussed herein.
... This photoelectric technique to read/write data was also reported in 2D black phosphorus/PZT FeFET. The fatigue performance of this device revealed the device to be fatigue-free for 500 cycles and the data retention was 3.6 × 10 3 s (Xie et al., 2019). Research works on PZT are summarized in ...
Memory is one of the most important electronic components. Over the years, memory technologies have been developed to have higher capacity, faster data trans- fer, and lower power operations; these performance indicators are crucial to keeping up with the increasing demand for high-performance computing. However, conventional technologies such as flash, static (SRAM) and dynamic random access memories (DRAM) face scalability issues. This chapter overviews some important emerging memory technologies based on oxide perovskite materials that have the potential to replace those conventional memories in the foreseeable future. These emerging memories are fast and non-volatile (able to store information without a continuous supply of power) and, hence, could potentially be used as both system and secondary memories in computing architecture. We discuss the basic concept, recent development, as well as their potential use beyond storage application.
... Herein, the inter-band transition related to the electronhole pairs is not utilized, thus resulting in poor device performance. Therefore, numerous two dimensional (2D) materials including WS 2 [22], black phosphorus [23], MoS 2 [24], and graphene [25,26] are integrated with PZT for fabricating heterostructure ferroelectric photodetector. In this case, 2D materials are served as the photoresponse active layer and PZT is operated as a back gate dielectric layer. ...
Sub-band energy levels induced photo-conduction mechanisms play a significant role in the extension of the response spectra within a photodetector. Herein, we reported a PbZr0.32Ti0.68O3 (PZT) based photodetector for sub-band photoresponse excited by a 450 nm blue laser. Sub-band induced by the defects acts as the intermediate state for the intra-band transition excited by the blue laser, in which the photon energy is smaller than the bandgap of the PZT thin film. Within both gate-controlled and blue laser driven operations, the source to drain current (Isd) can be precisely modulated. The photocurrent and response speeds of the device are also studied under air and vacuum conditions, which shows negligible fluctuations under different atmospheres and excludes the negative influence from the defect-related surface states. The proposed device configuration provides a simple and cost-effective visible light driven photodetector, which may give rise to an interesting route towards optoelectronic devices based on ferroelectric material.
... In extensively studied ferroelectric random access memory (FeRAM) and ferroelectric field-effect transistor (FeFET), [1][2][3][4][5] ferroelectric materials are the most important part. The discovery of ferroelectric property in Si-doped HfO 2 thin films has inspired substantial interest in doped-HfO 2 thin films, and the ferroelectricity has been experimentally confirmed with various dopants. ...
Hf0.5Zr0.5O2 (HZO) has become one of the most popular HfO2 based ferroelectric thin films due to its huge potential to integrate low-cost high-density nonvolatile ferroelectric memory. Most researchers sandwiched the HZO between metals, such as TiN, and then adopted post-deposition high temperature anneal to improve the ferroelectricity and reliability of the film. In this work, the effect of a thin dielectric Al2O3 layer with different thicknesses to replace a metallic capping layer on the ferroelectric properties of a HZO (10 nm) thin film is evaluated, and we also compared the effects of TiN and W bottom electrodes on the properties of a capacitor. The results showed that the TiN/Al2O3 (1 nm)/HZO/W capacitor performed the best with a maximum 2Pr as high as 31.4 μC/cm² at an electric field of ±3 MV/cm and very low leakage currents. In addition, the fatigue studies demonstrated the capacitor's excellent endurance properties with continuous cycling up to 10¹⁰ cycles. The use of an ultra-thin Al2O3 layer with excellent capping effects would significantly simplify the integration process of HfO2-based ferroelectric memory.
... 74 It also allows the heterostructure to be applied to other materials through van der Waals coupling. 75,76 Recently, PZT FeFETs have been fabricated using VO 2 nanowires (NWs), 77 the GaN NW, 78 2D black phosphorus (BP), 76 and graphene 79 as channel layers. High mobility can be obtained using graphene. ...
... 74 It also allows the heterostructure to be applied to other materials through van der Waals coupling. 75,76 Recently, PZT FeFETs have been fabricated using VO 2 nanowires (NWs), 77 the GaN NW, 78 2D black phosphorus (BP), 76 and graphene 79 as channel layers. High mobility can be obtained using graphene. ...
... When using BP, the data retention period can be increased dramatically to 3.6 × 10 6 s by using the optical read method. 76 Besides, the PZT FeFET using ZnO as a channel shows synaptic characteristics based on spike-timing-dependent synaptic plasticity (STDP). 80,81 B. FeFETs based on PVDF In 2004, Schroeder et al. fabricated the first organic ferroelectric field-effect transistor (OFeFET) using nylon polymer and poly(mxylylene adipamide) (MXD6) as a gate insulator and amorphous state pentacene (PEN) as a channel. ...
Ferroelectric field effect transistors (FeFETs) have attracted attention as next-generation devices as they can serve as a synaptic device for neuromorphic implementation and a one-transistor (1T) for achieving high integration. Since the discovery of hafnium–zirconium oxide (HZO) with high ferroelectricity (even at a thickness of several nanometers) that can be fabricated by a complementary metal–oxide–semiconductor-compatible process, FeFETs have emerged as devices with great potential. In this article, the basic principles of the FeFET and the design strategies for state-of-the-art FeFETs will be discussed. FeFETs using Pb(ZrxTi1−x)O3, polyvinylidene fluoride, HZO, and two-dimensional materials are emphasized. FeFETs, ferroelectric semiconductor field effect transistors, and metal–ferroelectric–insulator–semiconductor structures to which those materials can be applied are introduced, and their exotic performances are investigated. Finally, the limitations of these devices’ current performance and the potential of these materials are presented.
... напр. [88][89][90][91]). Примером такого решения является фотоэлектрическая память (с активацией считывания облучением), которую рассматривают в качестве элементов оптических систем, основанная на многослойной конструкции с использованием оксидного проводника LaNiO 3 , выращенного на нем слоя PZT и нескольких монослоев черного фосфора (BP, метод эксфолиации) [88]. ...
... [88][89][90][91]). Примером такого решения является фотоэлектрическая память (с активацией считывания облучением), которую рассматривают в качестве элементов оптических систем, основанная на многослойной конструкции с использованием оксидного проводника LaNiO 3 , выращенного на нем слоя PZT и нескольких монослоев черного фосфора (BP, метод эксфолиации) [88]. В работе [89] при создании гетероструктуры HfZrO x /MoS 2 для формирования наноразмерного слоя дихалькогенида применен CVD метод. ...
Semiconductor industry calls for emerging memory, demonstrating high speed (like
SRAM or DRAM), nonvolatility (like Flash NAND), high endurance and density, good
scalability, reduced energy consumption and reasonable cost. Ferroelectric memory
FRAM has been considered as one of the emerging memory technologies for over 20 years. FRAM uses polarization switching that provides low power consumption, nonvolatility, high speed and endurance, robust data retention, and resistance to data corruption via electric, magnetic fields and radiation. Despite the advantages, market share held by FRAM manufacturers is insignificant due to scaling challenges. State-of-the-art FRAM manufacturing is studied in this paper. Ferroelectric capacitors and memory cells made by main commercial FRAM manufactures (Texas Instruments, Cypress Semiconductor, Fujitsu, and Lapis Semiconductor) are explored. All memory cells are based on the lead zirconate titanate PZT capacitor with the thickness of about 70 nm and IrOx/Ir or Pt electrodes. The leading FRAM technology remains the 130 nm node CMOS process developed at Texas Instruments fabs. New approaches to further scaling and new devices based on ferroelectrics are reviewed, including binary ferroelectrics deposited by ALD techniques, piezoelectronic transistors, ferroelectric/2D-semiconductor transistor structures, and others. Whether FRAM technology will be able to resolve one of the main contradictions between a high-speed processor and a relatively slow nonvolatile memory depends on the success of the new technologies integration.
