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... The results showed that, for 90% of the theoretical BV, a conventional SZ-JTE obtained a narrow JTE dose tolerance of 1.0 × 10 12 cm −2 . Therefore, many modified forms of JTE have been proposed to improve the sensitivity, such as guard ring-assisted JTE (GA-JTE) [15][16][17], double-zone JTE (DZ-JTE) [18,19], multiple-zone JTE (MZ-JTE) [20,21], etched JTE [22,23], counter-doped JTE (CD-JTE) [24], and mesa combined with JTEs [25,26]. Feng [14] also reported that the JTE dose tolerance (4.8 × 10 12 cm −2 ) in the conventional DZ-JTE was improved compared with the conventional SZ-JTE. ...
... Micromachines 2018, 9, x FOR PEER REVIEW 2 of 9 sensitivity, such as guard ring-assisted JTE (GA-JTE) [15][16][17], double-zone JTE (DZ-JTE) [18,19], multiple-zone JTE (MZ-JTE) [20,21], etched JTE [22,23], counter-doped JTE (CD-JTE) [24], and mesa combined with JTEs [25,26]. Feng [14] also reported that the JTE dose tolerance (4.8 × 10 12 cm −2 ) in the conventional DZ-JTE was improved compared with the conventional SZ-JTE. ...
In this paper, an edge termination structure, referred to as step-double-zone junction termination extension (Step-DZ-JTE), is proposed. Step-DZ-JTE further improves the distribution of the electric field (EF) by its own step shape. Step-DZ-JTE and other termination structures are investigated for comparison using numerical simulations. Step-DZ-JTE greatly reduces the sensitivity of breakdown voltage (BV) and surface charges (SC). For a 30-μm thick epi-layer, the optimized Step-DZ-JTE shows 90% of the theoretical BV with a wide tolerance of 12.2 × 1012 cm−2 to the JTE dose and 85% of the theoretical BV with an improved tolerance of 3.7 × 1012 cm−2 to the positive SC are obtained. Furthermore, when combined with the field plate technique, the performance of the Step-DZ-JTE is further improved.
