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Comparison between different models
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The memristor is of great application and significance in the integrated circuit design, the realization of large-capacity non-volatile memories and the neuromorphic systems. This paper firstly proposes the non-local structural derivative memristor model with two-degree-of-freedom increased to portray the memory effect of memristor. Actually, the d...
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... on the results of numerical simulation, we present the comparison between different models for a clearer observation, as shown in Table 2. It can be seen that the memory effect described by the IMM or RLMM is limited, but that described by the NSDMM which increases two-degree-of-freedom is very flexible. ...Similar publications
A new type of weak signal detection system that combines the memristor and Van der pol-Duffing chaotic system has been proposed in this paper, and the dynamic characteristics of the system are studied. It is observed that the system can change from a chaotic state to a periodic state under different driving force amplitudes. Moreover, as compared w...
Citations
In this paper, homogenization functions are first proposed to address two-dimensional (2D) and three-dimensional (3D) inverse source problems of nonlinear time-fractional wave equation (ISPs-NTFWE). Homogenization functions for 2D and 3D problems can be derived based on proposed conditions. Then, the superposition of homogenization function method (SHFM) for tackling ISPs-NTFWE is obtained. This new scheme can directly deal with 2D and 3D ISPs-NTFWEs via resolving a linear matrix system. Importantly, the proposed SHFM has the advantage of not involving mesh generation, numerical integration, iteration, regularization and fundamental solutions. In addition, it is easy to program and implement which can achieve accurate results even for 10% noisy boundary data. Several numerical examples have been assessed to verify the accuracy of the developed method for ISPs-NTFWE.
Memristor is the fourth basic electronic element discovered in addition to resistor, capacitor, and inductor. It is a nonlinear gadget with memory features which can be used for realizing chaotic, memory, neural network, and other similar circuits and systems. In this paper, a novel memristor-based fractional-order chaotic system is presented, and this chaotic system is taken as an example to analyze its dynamic characteristics. First, we used Adomian algorithm to solve the proposed fractional-order chaotic system and yield a chaotic phase diagram. Then, we examined the Lyapunov exponent spectrum, bifurcation, SE complexity, and basin of attraction of this system. We used the resulting Lyapunov exponent to describe the state of the basin of attraction of this fractional-order chaotic system. As the local minimum point of Lyapunov exponential function is the stable point in phase space, when this stable point in phase space comes into the lowest region of the basin of attraction, the solution of the chaotic system is yielded. In the analysis, we yielded the solution of the system equation with the same method used to solve the local minimum of Lyapunov exponential function. Our system analysis also revealed the multistability of this system.
A novel bipolar photon-controlled generalized memristor model with an avalanche photodiode (APD) passive quenching circuit is presented in this paper. The SPICE model of the circuit is established and its fingerprints are analyzed by the pinched hysteresis loops with different bipolar periodic stimuli. The dynamical characteristics of the proposed circuit model are investigated both theoretically and simulatively. The results verified by Cadence Spectre circuit simulator demonstrate that the proposed circuit model is a simple bipolar photon-controlled generalized memristor. Compared with the previously published memristor models, the biggest innovation of this paper is to propose a bipolar generalized memristor model instead of the traditional model, which can easily form the pinched hysteresis loop. Another highlight is that the generalized memristor model in this paper is controlled by photons while conventional memristors are charge-controlled/flux-controlled. Furthermore, the circuit level models are more stable, more reliable and more resistant to interference than the device level models. The topological structure of the proposed circuit model in this paper is much more simpler.
The newly generalized energy storage component, namely, memristor, which is a fundamental circuit element so called universal charge-controlled mem-element, is proposed for controlling the analysis and coexisting attractors. The governing differential equations of memristor are highly nonlinear for mathematical relationships. The mathematical model of memristor is established in terms of newly defined fractal-fractional differential operators so called Atangana-Baleanu, Caputo-Fabrizio, and Caputo
fractal-fractional differential operator. A novel numerical approach is developed for the governing differential equations of memristor on the basis of Atangana-Baleanu, Caputo-Fabrizio, and Caputo fractal-fractional differential operator. We discussed chaotic behavior of memristor under three criteria such as (i) varying fractal order, we fixed fractional order; (ii) varying fractional order, we fixed fractal order; and (ii) varying fractal and fractional orders simultaneously. Our investigated graphical illustrations and simulated results via MATLAB for the chaotic behaviors of memristor suggest that newly
presented Atangana-Baleanu, Caputo-Fabrizio, and Caputo fractal-fractional differential operators generate significant results as compared with classical approach.
