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Comparison between DDR2 and NAND-Flash memory domains TABLE I SAMPLES USED FOR TID TESTS TID Test Campaign
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We report on new results of TID tests on an advanced 8-Gbit NAND-Flash memory. Data error percentage and standby current depend strongly on operational mode. Preventive memory refresh is proposed to move the first error occurrence to significant higher dose values. The count of erase cycles until wear out is not affected by the accumulated dose.
Context in source publication
Context 1
... this time NAND-Flash based telemetry buffer memories are under development at several sites [4], [5]. In this type of application the wear out limit will not be reached even after 10 years of operation. Fig. 1 presents a comparison between DDR2 SDRAM and NAND-Flash based memory modules of comparable physical size and mass, mounted with either sin- gle-die DDR2 or single-die NAND-Flash devices [6]. Ex- tremely high bit rates above 10 Gbps are the domain of DDR2 based buffer memories, and extremely high capacities of above 500 Gbit the domain ...
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Citations
... Owing to its storage mechanism, FG memory is naturally sensitive to ionizing radiation which generates electron-hole pairs, disturbs the charge stored in the floating gate, and sabotages the information retained in the device. Total dose failures have been reported in Flash memories at 50 krad [12], 25 krad [13], or even at dose levels less than 15 krad [14,15]. In addition, scaling limitations [16] of the FG because of the ultra-thin oxide and the current leakage are also hindering it from future development. ...
This study investigates the total ionizing dose effects in graphene-based charge-trapping memory (GCTM) capacitors by using ⁶⁰Co γ-irradiation. Electrical properties including C — V hysteresis window, gate leakage current, and flat band voltage shifts are evaluated with ionizing dose levels up to 1 Mrad (Si). The C — V hysteresis memory window is hardly affected by the irradiation. The gate leakage current increases with the increase of ionizing dose due to the multiple-trap assisted tunneling mechanism. Significant electrical degrade of the devices in programmed and erased states has been observed with the increase of the dose levels. Mechanisms behind the degradation are attributed to the photo-emission in the graphene nanodisc charge-trapping sets, radiation-induced holes trapping in the peripheral oxides, and the recombination of the stored electrons with the radiation-induced holes.
... More specifically, commercial floating gate (FG) flash memories are becoming increasingly attractive to spacecraft designers due to their lower cost, higher capacity and superior performance as compared to radiation hardened flash devices. As a result of the criticality of non-volatile flash for flight applications, the radiation sensitivity of these commercial memories has been explored in several studies in recent years, which have included 60 Co gamma total ionizing dose (TID) characterization as well as heavy ion and proton single event effect (SEE) experiments [1][2][3][4][5][6][7][8][9][10][11][12]. However, limited data exists regarding electron irradiation of flash memories. ...
... The radiation environment for the Europa Clipper mission, and natural space, in general, is characterized by a mixture of protons and heavy ions from galactic cosmic rays (GCRs) and solar particle events as well as trapped protons and electrons in the planetary radiation belts. As discussed in [8][9][10][11][12], one reason for choosing Samsung 8Gb (Version M) a single-level cell NAND flash memory, for this type of mission, is the device hardness to total ionizing dose (TID). This is important because an extremely large dose from electrons trapped in a planetary radiation belt is anticipated in this environment (more than 1 Mrad through thin spacecraft shielding, and large enough to be a concern for any shielding thickness). ...
This paper reports the results of electron irradiations at various energies of the Samsung 8Gb single-level cell NAND flash memory. The percentage of bit errors from electron exposure are compared to results from 60Co total ionizing dose measurements. Electron irradiation at low energies (below 2 MeV) causes more bit upsets than 60Co gamma exposures at the same TID level when TID refers to equilibrium dose (as opposed to local dose). Bit upsets increase when electron energy decreases if comparisons are made at the same equilibrium dose level. In particular, 60 MeV electrons are less damaging than 60Co gamma exposures at the same equilibrium dose level while 1 MeV electrons are more damaging. However, all radiation sources produce virtually identical results when comparisons are made at the same local dose level, indicating that charged-particle equilibrium is violated during electron irradiations.
... Therefore, so many tests and analysis shall be required [5]. Of space program tests, the TID test is a dominant factor for providing stable mission operation in space program [6]. The DAC-7512E is the first application by the NEXTSat-1 program. ...
The DAC-7512E is a 12-bit digital to analog converter that is low power and a single package with internal buffers. The DAC-7512E takes up minimal PCB area for applications of space power electronics design. The spacecraft mass is a crucial point considering spacecraft launch into space. Therefore, we have performed a TID test for the DAC-7512E 12-bit serial input digital to analog converter to reduce the spacecraft mass by using a low-level Gamma-ray irradiator with Co-60 gamma-ray sources. The irradiation with Co-60 gamma-rays was carried out at doses from 0 krad to 100 had to check the error status of the device in terms of current, voltage and bit error status during conversion. The DAC-7512E 12-bit serial digital to analog converter should work properly from 0 had to 30 had without any error.
... The flight unit of the TDM as shown in a folded out configuration in Fig. 1 The TDM also carries a latch-up experiment [5] based on 4 different SRAMs as listed in Table I. Each of these SRAMs (not visible in Fig. 1-on the back side) has a very different latch-up sensitivity which has been fully SEL characterized with both heavy ions and protons at 40 (ambient), 65 and 85 . ...
... All this imposes different challenges. Fortunately, this memory type has been fully SEE and TID radiation evaluated and characterized in 2007/2008 with support data presented at NSREC 2008 [3] and RADECS 2008 [5]. Basically the present design looks for dynamic and static errors and the capability of the Orthogonal Reed Solomon Error Correction Code. ...
A Technology Demonstration Module (TDM) to monitor radiation effects in semiconductor devices was part of the payload on-board the European Space Agency (ESA) PROBA-II satellite. PROBA-II was launched on November 2nd 2009, into an 800 km polar orbit with the TDM switched-on since February 15th 2010. The TDM primarily carries modern memory devices in order to monitor and record their Single Event Effect (SEE) behavior in respect to orbital positions. This paper presents details of in-flight data obtained between February 15th 2010 and March 31st 2011. Observed in-flight error rates are compared with predictions based on ground test data obtained on flight lot devices operating under identical conditions.
... As a technology demonstrator, state-of-the-art 8 G-bit FLASH memories from Samsung will be configured in a prototype design with ECC using 4 devices. This memory type has been fully SEE and TID radiation evaluated in 2007/2008 with data presented at NSREC 2008 [7] and RADECS 2008 [8]. ...
The reference SEU Monitor system designed and presented in 2005 (R. H. SOslashrensen, F.-X. Guerre, and A. Roseng ldquoDesign, testing and calibration of a reference SEU monitor system,rdquo in Proc. RADECS , 2005, pp. B3-1-B3-7) has now been used by many researchers at many radiation test sites and has provided valuable calibration data in support of numerous projects. As some of these findings and results give new insight into improved inter-facility calibrations and provide additional inputs into ongoing SEE research, a few of the more interesting cases are presented. Furthermore the dasiadetector elementpsila, the Atmel AT60142F SRAM, now in a hybrid configuration, will form the key detector element in the Technology Demonstration Module (TDM) to be flown on-board the PROBA-II satellite, to be launched at the beginning of 2009. This flight opportunity extends the Reference SEU Database with both ground and space data, taken on the same device under identical operating conditions. Additionally, the Reference SEU Monitor concept is employed as the basis for the new Reference SEL Monitor system, currently under characterization and preparation for integration on the TDM. Ground SEU/SEL characterization of this latch-up experiment is also presented as well as the basic concept of the TDM, the PROBA-II Radiation Monitor module.
Current commercial field programmable gate arrays (FPGAs) take serial configuration architecture to realize their programmability. However, the serial configuration circuit is very weak for radiation in terms of both total-ionizing-dose and soft-error tolerances. If radiation permanently breaks even only a few transistors inside an FPGA, the serial configuration circuit is easily down at an extremely high probability. Always, the total-ionizing-dose tolerance of radiation-hardened FPGAs is limited to up to 2 Mrad. In order to increase the total-ionizing-dose, a radiation-hardened FPGA with a triple-modular-redundant configuration circuit that can achieve 730 Mrad total-ionizing-dose tolerance has been developed. The radiation-hardened FPGA can allow a number of transistors to be broken by radiation and can have a large clock skew margin. This paper presents the analysis result of the clock tree buffer degradation caused by radiation based on the experimental result of the degradation of look-up tables and clarify the suitable clock skew margin of the radiation-hardened FPGA.
The impact of electrical stress on the effects of total ionizing dose (TID) on graphene nano-disc non-volatile memory (GND-NVM) devices is investigated by X-ray irradiation with doses ranging from 50 to 1000 krad. The electrical characteristics of the devices are measured at each dose step and are compared to those before X-ray exposure. Applying non-zero gate stress during irradiation significantly accelerates the degradation process, and the device fails with an unusable memory window at a TID dose of 500 krad. The electric field in the surrounding oxides plays a key role in the observed degradation.
The amount of data corruption in a wide assortment of flash memories observed during Co-60 total dose tests is shown to have a strong dependence on the direction in which the Co-60 irradiation is performed. The effect is due to dose enhancement from the metal layers above the floating gate. The dose enhancement effect is shown to become greater as technology node scales and is even observed in on a state-of-the-art 3D NAND flash memory. The radiation hardness assurance implications of this dose enhancement effect are significant and are discussed in detail.
