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Two differential coplanar MMIC HBT oscillators are presented, a
fixed frequency and a VCO version. They provide single-ended output at
the second harmonic at 38 GHz as well as differential output at 19 GHz.
The oscillators show excellent phase noise performance, the
fixed-frequency type reaches -95 dBc/Hz at the fundamental frequency and
-89 dBc/Hz...
Context in source publication
Context 1
... push-push oscillator is designed to operate at both the fundamental and the second harmonic frequency. In- stead of an output combiner, the 50 RXWSXWLVVSOD.HGG directly at the virtual ground of the phasing network. Fig. 1 presents the circuit schematics of the fixed- frequency version. ...
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Citations
... However, [7] and [6], the continuously tunable bandwidth is limited and the phase noise only moderate. In [8], the push-push strategy is applied to coplanar MMIC with InGaPi-GaAs-HBTs, which are known to combine 1/f noise with mm-wave capabilities. Moreover, the wideband, and low noise differential yttrium garnet (YIG) tuned oscillator is presented in [9]. ...
novel structure of low phase noise and high output power monolithic microwave integrated circuit (MMIC) oscillator is presented in order to use it in 5G applications. The oscillator is based on the ED02AH process which allows us to design a microwave oscillator keeping a minimum size which is impossible to have it using other technologies since microwave oscillators are sensitive components above 20 GHz. The oscillator is studied, designed, and optimized on a GaAs substrate from the OMMIC foundry using the advanced design system (ADS) simulator in order to obtain a miniaturized oscillator (1.1×1.3 mm<sup>2</sup>) generating two signals of different frequencies f<sub>o1</sub>=26 GHz and f<sub>o2</sub>=30 GHz. The objective is to design an oscillator with high output power and low phase noise while respecting its specifications. The optimization of the proposed microwave oscillator shows satisfying results. Indeed, at 26 GHz and 30 GHz, the output powers are respectively 13.33 dBm and 14.89 dBm. The oscillator produces a sinusoidal signal of 1.5 V and 1.75 V amplitude respectively at 26 GHz and 30 GHz. The oscillator phase noise at f<sub>o1</sub> and f<sub>o2</sub> resonance frequencies using the liquid crystal (LC) resonator shows respectively -109 dBc/Hz and -110 dBc/Hz at 10 MHz offset.
... The difference between the measured and the simulated results is probably due to the lack of an accurate noise model for the device. [13], [14] To benchmark the GaN capability, the phase noise of this GaN VCO is compared to those of several low-noise VCOs from recent years' publication (see Table I). ...
A Q-band 40-GHz GaN monolithic microwave integrated circuit voltage controlled oscillator (VCO) based on AlGaN/GaN high electron mobility transistor technology has been demonstrated. The GaN VCO delivered an output power of +25dBm with phase noise of -92dBc/Hz at 100-KHz offset, and -120dBc/Hz at 1-MHz offset. To the best of our knowledge, this represents the state-of-the-art for GaN VCOs in terms of frequency, output power, and phase noise performance. This work demonstrates the potential for the use of GaN technology for high frequency, high power, and low phase noise frequency sources for military and commercial applications
... In general, the push-push concept offers several advantages over single-ended designs: @BULLET Since the transistors are operated at half of the desired output frequency, the usable frequency range of the devices can be extended, [6] @BULLET Simultaneous generation of both the fundamental and second harmonic frequency is feasible [3]. Feeding f 0 into a frequency divider instead of 2f 0 lowers the divider efforts (sec. ...
A MMIC Colpitts oscillator in push-push configuration with integrated frequency divider using InGaP/GaAs HBTs is presented. The output is taken from the second harmonic port while the fundamental signal is fed to a frequency divider by two thus providing a reference signal at one quarter of the output frequency. The MMIC VCO reaches state-of-the-art phase-noise performance in X-band down to -120dBc/Hz at 1MHz offset frequency at high output power and a tuning range of 4%.
... The major advantages of the concept are that the usable frequency range of a device is extended and that each device is operating at half of the desired output frequency. This offers the possibility to employ larger size transistors which exhibit lower 1/f-noise due to a reduced current density [2]. Also, due to the higher gain margin at the lower frequency, the loaded Q can be increased, which results in phase-noise reduction. ...
... The 7 dBc improvement of the push-push version over the fundamental one is significant. It is attributed to two main effects: First, one has an increased loaded Q at half of the output frequency due to the higher transistor gain available [2]. Second, noise is reduced due to oscillator coupling. ...
Key components of sensor front-ends have been realized for the frequency range beyond 100 GHz in a SiGe bipolar technology. The circuits presented include 110 GHz push-push and fundamental VCOs, both with up to 0 dBm ouput power, as well as fixed-frequency oscillators at 121 and 124 GHz. Furthermore, 122 GHz down-conversion mixers are demonstrated.
... The circuits presented rely on the push-push principle. Since no combiner is used, the second harmonic is extracted directly at the virtual ground as shown in [2] and [6]. In contrast to many other push-push oscillators, the fundamental frequency is terminated reactively, which increases quality factor Q L . ...
Coplanar W-band push-push VCO MMICs using GaInP/GaAs HBTs are presented. One circuit operates at 77 GHz with phase noise of -92 dBc/Hz at 1 MHz offset. To our knowledge this is the first fully monolithic W-band VCO with phase noise better than -90 dBc/Hz. A second version with two varactor diodes yields an almost threefold relative tuning bandwidth.
... Due to fabrication tolerances, the fundamental frequency is not suppressed ideally at the fundamental pled fundamental frequency is approximately 6 dB lower at the same offset frequency. This agrees with the measurement results presented in [11]. The measured phase noise characteristic is shown in figures 9. ...
We present a 40 GHz push-push oscillator based on SiGe HBTs. The circuit is fabricated in thin film technology on an alumina substrate. It provides an output power of -9 dBm at 40 GHz and two differential outputs with -6 dBm each at the fundamental frequency of 20 GHz. The oscillator shows an excellent phase noise performance and reaches -108 dBc/Hz at the second harmonic frequency of 40 GHz and -114 dBc/Hz at the fundamental frequency of 20 GHz Both values are measured at an offset frequency of I MHz.
... This can be, for example, double-sided microstrip resonators [15]- [18] or dielectric resonators (DRs) [14], [19], [20], as well as appropriate transmission lines [13], [4]. Another possibility is to design the impedances of the connecting output network in such a way that the conditions for oscillation are fulfilled for the odd-mode impedance only, but not for the even-mode impedance [4], [6], [10], [21], [22]. The phase-coupling network shown in Fig. 1 is obsolete in this case. ...
Push-push design has proven to be an efficient way to extend the usable frequency range of active devices for oscillator applications. In this paper, the basic principles of push-push oscillator design are explained and various possibilities to realize this concept are shown. Several examples of hybrid millimeter-wave push-push oscillators using SiGe HBTs as active devices are discussed. Details on large-signal modeling of the SiGe HBTs using both a vertical bipolar integrated-circuit model, as well as a customized large-signal model are given. Measured key performance data of microstrip resonator oscillators at 57 and 58 GHz are output power levels of +1 dBm and single-sideband phase-noise figures (1-MHz offset from carrier) of -106 and -108 dBm/Hz, respectively. For the dielectric-resonator oscillators, a maximum output power of -8 dBm and an optimum phase noise of -112 dBc/Hz (-14-dBm output power), as well as a mechanical tuning range of 500 MHz were measured.
... One explanation is that since the feedback capacitors must bypass the transistor, modifications of the transistor layout cell are mostly inevitable resulting in uncertanties of the transistor model and thus reduced accuracy of the circuit simulation. The application of the push-push concept offers several advantages over single-ended designs: @BULLET Since each transistor runs at half the desired output frequency , the usable frequency range of the devices can be extended, [7] @BULLET Simultaneous generation of both the fundamental and second harmonic frequency is feasible, which relaxes the effort for PLL circuitry [6],[3] @BULLET Phase noise reduction due to synchronization effects [4],[5] @BULLET High immunity against load-pull. Because the second harmonic output is located at the virtual ground plane changes of the load affect the fundamental signal only indirectly (Section VI). ...
A MMIC colpitts oscillator in push-push configuration is presented using InGaP/GaAs HBTs. The output at the second har-monic enhances the frequency range while preserving the well-known advantages of the Colpitts concept. Moreover, additional features like enhanced load-pull immunity and inherent frequency divider function-ality are included. The MMIC VCO reaches state-of-the-art phase-noise performance in X-band.
... And, frequency doubled signal of the LC oscillator is loaded at the RF load because of the switching of the two transistors Q 1 and Q 2 . The RF load can be any matching circuit or output 50 ˟ load [3]. ...
... The type of Fig.1. (c) has previously reported in [3]. In this paper, cross coupled type push-push VCO using embedded frequency doubling mechanism is presented. ...
A K-Band Push-Push VCO MMIC which has
small size, high output power and low phase noise is
presented. This push-push VCO utilize the embedded
frequency doubling mechanism of cross coupled topology. A
commercial InGaP/GaAs HBT technology with the f T of 60
GHz and the fMAX of 110 GHz was used for the
implementation. The oscillation frequency is from 21.02
GHz to 21.17 GHz. The peak output power of the VCO is
1.7dBm. The phase noise is -110dBc/Hz at 1MHz offset from
21.16 GHz. The chip size is 0.81 0.64 mm2.
The fabrication and electrical performance of monolithic coplanar 19- and 38-GHz oscillators in GalnP/GaAs-HBT MMIC technology are presented. Both fixed frequency and Voltage Controlled Oscillators (VCOs) have been realized. The fixed frequency oscillators show very low phase noise (PN), in case of the 19-GHz oscillator PN is -96 dBc/Hz, the 38-GHz oscillator reaches -89 dBc/Hz at 100 kHz offset.
